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CVD Tantalum Carbide(TaC) Coated Susceptor
  • CVD Tantalum Carbide(TaC) Coated SusceptorCVD Tantalum Carbide(TaC) Coated Susceptor
  • CVD Tantalum Carbide(TaC) Coated SusceptorCVD Tantalum Carbide(TaC) Coated Susceptor
  • CVD Tantalum Carbide(TaC) Coated SusceptorCVD Tantalum Carbide(TaC) Coated Susceptor

CVD Tantalum Carbide(TaC) Coated Susceptor

The VETEK CVD TaC Coated Susceptor combines a high-purity isostatic graphite substrate with a dense CVD tantalum carbide (TaC) coating to deliver exceptional thermal stability, corrosion resistance, and low particle generation for demanding semiconductor epitaxy. Designed for SiC, GaN, and AlN epitaxial growth, it minimizes contamination, improves wafer temperature uniformity, and extends component service life in high-temperature MOCVD and CVD processes.

Key Features

High-Temperature Stability: Maintains stable performance under prolonged high-temperature processing conditions.
Corrosion Resistance: The dense TaC coating provides effective protection against corrosive process gases.
Low Particle Generation: A dense coating structure helps reduce contamination during epitaxial growth.
Excellent Thermal Uniformity:  Supports uniform heat distribution for improved process consistency.
Long Service Life: High wear resistance contributes to reduced maintenance and longer operating cycles.


Applications

Typical applications include:

• SiC Epitaxial Growth

• GaN MOCVD Epitaxy

• AlN Epitaxial Growth

• Third-Generation Semiconductor Manufacturing

• High-Power Electronics

• RF Devices

• MicroLED Production

• Research and Pilot Production Systems


Compatible Equipment

Compatible platforms include:

• Aixtron

• LPE

• Veeco

• AMEC

• NuFlare

• Custom CVD & MOCVD Reactors


Also available:

• Wafer Carriers

• Planetary Susceptors

• Barrel Susceptors

• Rotation Disks

• Half-Moon Parts

• Cover Plates

• Graphite Assemblies

• Custom Thermal Field Components


Technical Specifications

Substrate Material

High-Purity Isostatic Graphite

Coating Material

CVD Tantalum Carbide (TaC)

Coating Thickness
20–40 μm (Customizable)
Coating Purity
Up to 99.9995%
Maximum Working Temperature

>2000°C (Inert Atmosphere)

Density
14.3 g/cm³
Hardness
~2000 HK
Thermal Expansion Coefficient
6.3 × 10⁻⁶/K
Electrical Resistivity
1 × 10⁻⁵ Ω·cm
Available Sizes
Customized
Typical Applications
SiC, GaN, AlN Epitaxy

Frequently Asked Questions

1. What is a CVD TaC Coated Susceptor?

A high-purity graphite component protected by a dense CVD TaC coating used as the wafer carrier during epitaxial growth.

2. Why use TaC coating instead of SiC coating?

TaC offers higher temperature resistance, superior chemical stability, and longer service life.

3. Which semiconductor processes use TaC-coated susceptors?

SiC epitaxy, GaN MOCVD, AlN epitaxy, and other high-temperature crystal growth processes.

4. Can VETEK manufacture customized susceptors?

Yes. We provide customized designs based on customer drawings and process requirements.

5. Which reactor brands are supported?

Aixtron, LPE, Veeco, AMEC, NuFlare, and other mainstream systems.


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