Silicon Carbide Seed Crystal Bonding Vacuum Hot-Press Furnace

The SiC seed bonding technology is one of the key processes that affect crystal growth.VETEK has developed a specialized vacuum hot-press furnace for seed bonding based on the characteristics of this process. The furnace can effectively reduce various defects generated during the seed bonding process, thereby improving the yield and the final quality of the crystal ingot.

Introduce

1.The furnace is used for seed bonding before SiC crystal growth

2.The bonded seed can remain firmly attached at a temperature of 2300℃, maintaining 100% adhesion without air bubbles, with high flatness, clean surface of the seed, and no impurities adsorbed

3.The heated plateform is adopted resistanceheating of spiral disc-shaped, uniform heating zone, it’s savety to use, easy to operate

4.The bottom of the load plateform equipped with force sensors, the downforce on the workpiece to be precise displayed 

Function Introduction

1.The water-cooled metal chamber of the double-wall reduces the outer surface temperature of the furnace body effectively, minimizes high-temperature harm and lowers the impact on the environment.

2.It can achieve automatic increase downforce and force holding, slow loading force , and displacement can be automatically controlled.

3.Diversified vacuum configurations are available, and different vacuum levels can be selected according to the process.

4.Uniform pressure and high temperature control accuracy.

5.The downforce structure adopts a precise mechanical thrust disign, ensuring accurate and stabledownforce, safe use and environmental friendliness.

6.The down stamp is connected to the push rod with "universal" way. It is ensure when the workpiece is suppressed, the surface of down stamp is under adaptive parallel with the surface of the heated plateform , ensure the workpiece bearing the uniform downforce.

7.The down stamp has a function of buffering loading downforce, providing smooth and soft downforce without impact, thus to prevent cracking of the workpiece .

9.Both the heated plateform and the downforce stamp are equipped with thermal insulation shield to reduce the ineffective loss of temperature.

Parameter

Feature

1.Slow vacuum pumping, vacuum pumping rate adjustable

2.Large chamber, large upgrade space

3.The down stamp runs stable and operates automatically

4.The downforce slow relief and slow increase, downforce ramp according to recipe automatic control

5.Precise programmed control of temperature and downforce

6.The parameters of vacuum, downforce and temperature can be freely set to match different bonding processes

7.The bonding is compacted and free of bubbles

8.The rate of crack is extremely low, with almost no crack caused by equipment issues

9.Compatible with the seed bonding of 6-12 inches

10.Max. downforce：1.6 T

11.Ultimate vacuum ：5 Pa (cold)

12.Temperature uniformity of the heated plateform：＜±3℃，σ<4（200℃）

13.Fluctuation of pressure ：<0.5%