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SiC Coated Silicon Carbide Wafer Boat
  • SiC Coated Silicon Carbide Wafer BoatSiC Coated Silicon Carbide Wafer Boat
  • SiC Coated Silicon Carbide Wafer BoatSiC Coated Silicon Carbide Wafer Boat
  • SiC Coated Silicon Carbide Wafer BoatSiC Coated Silicon Carbide Wafer Boat
  • SiC Coated Silicon Carbide Wafer BoatSiC Coated Silicon Carbide Wafer Boat
  • SiC Coated Silicon Carbide Wafer BoatSiC Coated Silicon Carbide Wafer Boat

SiC Coated Silicon Carbide Wafer Boat

SiC Coated Silicon Carbide Wafer Boat is designed with 165 slots to carry wafers.VeTek Semiconductor is professional manufacturer and supplier in China for SiC coated silicon carbide wafer boat, with years of experience in R&D and production, can control the quality well and offer a competitive price. Welcome for visiting our factory and have further discussion on cooperation.

VeTek Semiconductor is China manufacturer & supplier who mainly produces SiC Coated Silicon Carbide Wafer Boat with many years of experience. Hope to build business relationship with you.SiC coated silicon carbide wafer boat is used in semiconductor diffusion furnaces to carry the wafers for various high-temperature processes such as ion implantation, diffusion, and annealing. It can provide a stable environment for the wafers, ensuring temperature uniformity and consistency during processing.

SiC coated silicon carbide wafer boats have higher heat resistance and chemical stability, allowing them to operate at higher temperatures and provide longer lifespans. Additionally, they have lower material evaporation rates and gas adsorption rates, helping to reduce the impact of impurities on wafer processing.

We can manufacture different types of silicon carbide wafer boat such as horizontal wafer boat, vertical wafer boat, and any other customized boats.


Advantages of our high purity silicon carbide:

1.High-Temperature Stability

2.Chemical Inertness

3.Low Impurity Content

4.Thermal Conductivity


Physical properties of Recrystallized Silicon Carbide

Physical properties of Recrystallized Silicon Carbide
Property Typical Value
Working temperature (°C) 1600°C (with oxygen), 1700°C (reducing environment)
SiC content > 99.96%
Free Si content < 0.1%
Bulk density 2.60-2.70 g/cm3
Apparent porosity < 16%
Compression strength > 600 MPa
Cold bending strength 80-90 MPa (20°C)
Hot bending strength 90-100 MPa (1400°C)
Thermal expansion @1500°C 4.70x10-6/°C
Thermal conductivity @1200°C 23  W/m•K
Elastic modulus 240 GPa
Thermal shock resistance Extremely good


VeTek Semiconductor Production Shop:

VeTek Semiconductor Production Shop


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