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CVD Silicon Carbide (SiC) Coated Graphite RTP RTA Carrier
  • CVD Silicon Carbide (SiC) Coated Graphite RTP RTA CarrierCVD Silicon Carbide (SiC) Coated Graphite RTP RTA Carrier
  • CVD Silicon Carbide (SiC) Coated Graphite RTP RTA CarrierCVD Silicon Carbide (SiC) Coated Graphite RTP RTA Carrier

CVD Silicon Carbide (SiC) Coated Graphite RTP RTA Carrier

The VETEK CVD Silicon Carbide (SiC) Coated Graphite RTP RTA Carrier is designed for rapid thermal processing (RTP) and rapid thermal annealing (RTA) systems used in semiconductor manufacturing. Manufactured from high-purity isostatic graphite with a dense CVD SiC coating, it provides outstanding thermal stability, excellent temperature uniformity, superior chemical resistance, and ultra-low particle generation. Engineered to withstand repeated rapid heating and cooling cycles, the carrier ensures reliable wafer support and stable process performance for silicon wafer annealing and other high-temperature semiconductor applications.

Product Features

· Core Equipment: Designed for Rapid Thermal Annealing (RTA) and Rapid Thermal Processing (RTP) systems.

· Primary Application: Optimized for semiconductor wafer annealing processes.

· Operating Temperature: Stable operation from 200°C to 700°C.

· Excellent Thermal Uniformity: Ensures even heat distribution for consistent wafer processing.

· Low Particle Generation: Dense CVD SiC coating minimizes contamination and improves production yield.

· Superior Chemical Resistance: Resistant to oxidation and corrosive process gases during thermal processing.

· Outstanding Thermal Shock Resistance: Maintains structural integrity through repeated rapid heating and cooling cycles.

· Long Service Life: Wear-resistant SiC coating significantly extends component lifetime and reduces maintenance costs.

· Custom Manufacturing: Available in various sizes and configurations to match different RTP/RTA equipment.


Technical Specifications

Basic Physical Properties of CVD SiC Coating
Property
Typical Value
Crystal Structure
FCC β phase polycrystalline, mainly (111) orientated
Density
3.21 g/cm³
Hardness
2500 Vickers hardness (500 g load)
Grain Size
2–10 μm
Chemical Purity
99.99995%
Heat Capacity
640 J·kg⁻¹·K⁻¹
Sublimation Temperature
2700°C
Flexural Strength
415 MPa (RT, 4-point bending)
Young's Modulus
430 GPa (4-point bending, 1300°C)
Thermal Conductivity
300 W·m⁻¹·K⁻¹
Thermal Expansion Coefficient (CTE)
4.5 × 10⁻⁶ K⁻¹

Applications

· Rapid Thermal Annealing (RTA)

· Rapid Thermal Processing (RTP)

· Silicon Wafer Annealing

· Dopant Activation

· Oxidation

· Diffusion

· Compound Semiconductor Manufacturing

· MEMS Fabrication

· Power Semiconductor Processing


FAQ

1. What is an RTP/RTA Carrier?

An RTP/RTA Carrier is a wafer support component used inside rapid thermal processing and rapid thermal annealing systems. It securely holds semiconductor wafers while providing uniform heat transfer throughout the thermal cycle.

2. Why is CVD SiC coating preferred?

Compared with bare graphite, CVD SiC coating offers superior oxidation resistance, lower particle generation, better chemical stability, and significantly longer service life.

3. Can VETEK provide customized RTP/RTA carriers?

Yes. VETEK offers customized RTP/RTA carriers based on customer drawings.


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