Intelligent Cutting Technology for Cubic Silicon Carbide Wafers

Smart cut is an advanced semiconductor manufacturing process based on ion implantation and wafer stripping, specifically designed for the production of ultra-thin and highly uniform 3C-SiC (cubic silicon carbide) wafers. It can transfer ultra-thin crystal materials from one substrate to another, thereby breaking the original physical limitations and changing the entire substrate industry.

Compared with traditional mechanical cutting, the Smart Cut technology significantly optimizes the following key indicators:

Ttechnical Feature

Improve the utilization rate of materials

In traditional manufacturing methods, the cutting and polishing processes of silicon carbide wafers waste a considerable amount of raw materials. The Smart Cut technology achieves a higher material utilization rate through a layered process, which is particularly important for expensive materials such as 3C SiC.

Significant cost-effectiveness

The reusable substrate feature of Smart Cut can maximize the utilization of resources, thereby reducing manufacturing costs. For semiconductor manufacturers, this technology can significantly improve the economic benefits of production lines.

Wafer performance improvement

The thin layers generated by Smart Cut have fewer crystal defects and higher consistency. This means that the 3C SiC wafers produced by this technology can carry a higher electron mobility, further enhancing the performance of semiconductor devices.

Support sustainability

By reducing material waste and energy consumption, the Smart Cut technology meets the growing environmental protection demands of the semiconductor industry and provides manufacturers with a path to transform towards sustainable production.

The innovation of Smart Cut technology is reflected in its highly controllable process flow:

1.Precision ion implantation ‌

a. Multi-energy hydrogen ion beams are used for layered injection, with the depth error controlled within 5 nm.

b. Through dynamic dose adjustment technology, lattice damage (defect density <100 cm⁻²) is avoided.

2.Low-temperature wafer bonding ‌

a.Wafer bonding is achieved through plasma activation below 200°C to reduce the impact of thermal stress on device performance.

3.Intelligent stripping control ‌

a. Integrated real-time stress sensors ensure no microcracks during the peeling process (yield >95%).

4.Youdaoplaceholder0 Surface polishing optimization ‌

a. By adopting chemical mechanical polishing (CMP) technology, the surface roughness is reduced to the atomic level (Ra 0.3nm).

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