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CVD TaC Coated Susceptor
  • CVD TaC Coated SusceptorCVD TaC Coated Susceptor

CVD TaC Coated Susceptor

Vetek CVD TaC Coated Susceptor is a precision solution specifically developed for high-performance MOCVD epitaxial growth. It demonstrates excellent thermal stability and chemical inertness in extreme high-temperature environments of 1600°C. Relying on VETEK's rigorous CVD deposition process, we are committed to improving wafer growth uniformity, extending the service life of core components, and providing stable and reliable performance guarantees for your every batch of semiconductor production.

Product Definition and Composition


The VETEK CVD TaC Coated Susceptor is a high-end wafer carrier component specifically used for third-generation semiconductor (SiC, GaN, AlN) epitaxial processing. This product combines the physical advantages of two high-performance materials:


High-Purity Graphite Substrate: Utilizes an isostatic pressing molding process to ensure the substrate possesses superior structural strength, high density, and thermal processing stability.

CVD TaC Coating: A dense, stress-free Tantalum Carbide (TaC) protective layer is grown on the graphite surface through advanced Chemical Vapor Deposition (CVD) technology.



Core Technical Advantages: Extraordinary Extreme Environment Adaptability


In the MOCVD process, the TaC coating is not only a physical protective layer but also the core to ensuring process repeatability:


Tolerance to Extreme High Temperatures: TaC has a melting point as high as 3880°C, maintaining excellent shape stability even in ultra-high temperature epitaxial processes above 1600°C.

Excellent Corrosion Resistance: In strong reducing environments containing NH₃(Ammonia) or H₂(Hydrogen), the corrosion rate of TaC is extremely low, effectively preventing substrate loss and impurity precipitation.

Ultra-High Purity Guarantee: The coating purity is as high as 99.9995%. Its dense structure completely seals graphite micropores, ensuring the epitaxial film reaches extremely low impurity levels.

Precise Thermal Field Distribution: VETEK’s optimized coating control technology ensures the susceptor surface temperature difference is controlled within ±2°C, significantly improving the thickness and wavelength consistency of the wafer epitaxial layer.


Technical Parameters


Physical properties of TaC coating
project
parameter
Density
14.3 (g/cm³)
Specific emissivity
0.3
Thermal expansion coefficient
6.3 10-6/K
Hardness (HK)
2000 HK
Resistance
1×10-5 Ohm*cm
Thermal stability
<2500℃
Graphite size changes
-10~-20um
Coating thickness
≥20um typical value (35um±10um)


Tantalum carbide (TaC) coating on a microscopic cross-section:

Tantalum carbide (TaC) coating on a microscopic cross-section


Core Application Fields


SiC (Silicon Carbide) Epitaxial Growth: Supports the production of 6-inch, 8-inch, and larger size SiC power devices.

GaN (Gallium Nitride) Based Devices: Used in MOCVD processes for high-brightness LEDs, HEMT power devices, and RF chips.

AlN (Aluminum Nitride) and UVC Growth: Provides extreme high-temperature (1400°C+) carrier solutions for ultra-wide bandgap materials such as Deep UV LEDs.

Customized Research Support: Adapts to the precision customization needs of research institutes for various irregular parts and multi-hole disks.


Compatible Models and Customization Services


VETEK possesses precise mechanical processing and coating capabilities, perfectly adapting to global mainstream MOCVD equipment:


AIXTRON: Supports various planetary rotation disks and bases.

Veeco: Supports K465i, Propel, and other vertical susceptor series.

AMEC and Others: Provides fully compatible replacement parts or upgrade solutions.


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