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China Semiconductor Wafer Carrier Manufacturer, Supplier, Factory

We believe in: Innovation is our soul and spirit. Good quality is our life. Shopper need to have is our God for Semiconductor Wafer Carrier, CVD TaC Coating Susceptor, MOCVD Susceptor, Graphite Susceptor, Wafer Holder, Welcome your traveling to and any your inquires,sincerely hope we could have chance to cooperate along with you and we can build-up extensive nicely small business romantic relationship along with you.
Semiconductor Wafer Carrier, Our company insists on the principle of "Quality First, Sustainable Development", and takes "Honest Business, Mutual Benefits" as our developable goal. All members sincerely thank all old and new customers' support. We'll keep working hard and offering you the highest-quality goods and service.

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  • SiC Coating Cover Segments

    SiC Coating Cover Segments

    Vtech Semiconductor is committed to the development and commercialization of CVD SiC coated parts for Aixtron reactors. As an example, our SiC Coating Cover Segments have been carefully processed to produce a dense CVD SiC coating with excellent corrosion resistance, chemical stability, welcome to discuss application scenarios with us.
  • Tantalum Carbide Ring

    Tantalum Carbide Ring

    As an advanced manufacturer and producer of Tantalum Carbide Ring products in China, VeTek Semiconductor Tantalum Carbide Ring has extremely high hardness, wear resistance, high temperature resistance and chemical stability, and is widely used in the semiconductor manufacturing field. Especially in CVD, PVD, ion implantation process, etching process, and wafer processing and transportation, it is an indispensable product for semiconductor processing and manufacturing. Looking forward to your further consultation.
  • TaC coated wafer susceptor

    TaC coated wafer susceptor

    VeTek Semiconductor TaC Coated Wafer Susceptor is a graphite tray coated with tantalum carbide for silicon carbide epitaxial growth to improve wafer quality and performance. VeTek is selected because of its advanced coating technology and durable solutions to ensure excellent SiC epitaxy results and extended susceptor life, welcome your further inquiries.
  • SiC ICP Etching Plate

    SiC ICP Etching Plate

    Veteksemicon provides high-performance SiC ICP Etching Plates, designed for ICP etching applications in the semiconductor industry. Its unique material properties enable it to perform well in high temperature, high pressure and chemical corrosion environments, ensuring excellent performance and long-term stability in various etching processes.
  • Halfmoon for LPE Reaction Chamber

    Halfmoon for LPE Reaction Chamber

    The Halfmoon is a graphite component used inside LPE SiC reactors, mainly installed around the chamber hot zone. Although it does not directly contact the wafer, it still plays a role in gas flow stability and reactor operation during epitaxial growth.To handle high temperature and reactive process conditions, the component is usually protected with CVD SiC coating, while TaC coating is also available for some applications. VETEK also supplies graphite felt insulation and other coated graphite parts for SiC epitaxy systems.
  • SiC Coated Graphite Barrel Susceptor for EPI

    SiC Coated Graphite Barrel Susceptor for EPI

    The barrel type epitaxial wafer heating base is a product with complicated processing technology, which is very challenging to machining equipment and ability. Vetek semiconductor has advanced equipment and rich experience in processing SiC coated graphite barrel susceptor for EPI, can provide the same as the original factory life, more cost-effective epitaxial barrels.If you are interested in our datas,pls no hesitate to contact us.

  • The Development History of 3C SiC

    Through continuous technological progress and in-depth mechanism research, 3C-SiC heteroepitaxial technology is expected to play a more important role in the semiconductor industry and promote the development of high-efficiency electronic devices.

  • How to prepare CVD TaC coating? - Veteksemicon

    This article introduces the product characteristics of CVD TaC coating, the process of preparing CVD TaC coating using the CVD method, and the basic method for surface morphology detection of the prepared CVD TaC coating.

  • What is Porous Graphite? - VeTek Semiconductor

    This article describes the physical parameters and product characteristics of VeTek Semiconductor's Porous Graphite, as well as its specific applications in semiconductor processing.

  • What is an EPI Epitaxial Furnace? - VeTek Semiconductor

    The working principle of the epitaxial furnace is to deposit semiconductor materials on a substrate under high temperature and high pressure. Silicon epitaxial growth is to grow a layer of crystal with the same crystal orientation as the substrate and different thickness on a silicon single crystal substrate with a certain crystal orientation. This article mainly introduces the silicon epitaxial growth methods: vapor phase epitaxy and liquid phase epitaxy.

  • Italy's LPE's 200mm SiC epitaxial technology progress

    This article introduces the latest developments in the newly designed PE1O8 hot-wall CVD reactor of the Italian company LPE and its ability to perform uniform 4H-SiC epitaxy on 200mm SiC.

  • Why Silicon carbide(SiC) PVT Crystal Growth Cannot Do Without Tantalum Carbide Coatings(TaC)?

    In the process of growing silicon carbide (SiC) crystals via the Physical Vapor Transport (PVT) method, the extreme high temperature of 2000–2500 °C is a “double-edged sword” — while it drives the sublimation and transport of source materials, it also dramatically intensifies impurity release from all materials within the thermal field system, especially trace metallic elements contained in conventional graphite hot-zone components. Once these impurities enter the growth interface, they will directly damage the core quality of the crystal. This is the fundamental reason why tantalum carbide (TaC) coatings have become a “mandatory option” rather than an “optional choice” for PVT crystal growth.

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