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China SiC epitaxy ring Manufacturer, Supplier, Factory

We purpose to understand high quality disfigurement with the output and supply the top service to domestic and overseas buyers wholeheartedly for SiC epitaxy ring, 8 inch SiC epi top ring, CVD silicon carbide ring, Semiconductor epitaxy components, SiC CVD coated parts, For more info, be sure to call us as shortly as possible!
SiC epitaxy ring, So far our goods have been exported to east Europe, the Middle East, Southeast, Africa and South America etc. We have now 13years professional sales and purchase in Isuzu parts at home and abroad and the ownership of the modernized electronic Isuzu parts checking systems. We honor our core principal of Honesty in business, priority in service and will do our best to offer our customers with high quality goods and excellent service.

Hot Products

  • Large sized resistance heating SiC crystal growth furnace

    Large sized resistance heating SiC crystal growth furnace

    Silicon carbide crystal growth is a core process in the manufacturing of high-performance semiconductor devices. The stability, precision, and compatibility of crystal growth equipment directly determine the quality and yield of silicon carbide ingots. Based on the characteristics of Physical Vapor Transport (PVT) technology, Veteksemi has developed a resistance heating furnace for silicon carbide crystal growth, enabling stable growth of 6-inch, 8-inch, and 12-inch silicon carbide crystals with full compatibility with conductive, semi-insulating, and N-type material systems. Through precise control of temperature, pressure, and power, it effectively reduces crystal defects such as EPD (Etch Pit Density) and BPD (Basal Plane Dislocation), while featuring low energy consumption and a compact design to meet the high standards of industrial large-scale production.
  • Epi wafer holder

    Epi wafer holder

    VeTek Semiconductor is a professional Epi Wafer Holder manufacturer and factory in China. Epi Wafer Holder is a wafer holder for the epitaxy process in semiconductor processing. It is a key tool to stabilize the wafer and ensure uniform growth of the epitaxial layer. It is widely used in epitaxy equipment such as MOCVD and LPCVD. It is an irreplaceable device in the epitaxy process. Welcome your further consultation.
  • GaN Epitaxy susceptor

    GaN Epitaxy susceptor

    VeTek Semiconductor is a Chinese company that is a world-class manufacturer and supplier of GaN Epitaxy susceptor. We have been working in the semiconductor industry such as silicon carbide coatings and GaN Epitaxy susceptor for a long time. We can provide you with excellent products and favorable prices. VeTek Semiconductor looks forward to becoming your long-term partner.
  • Tantalum Carbide Coating Cover

    Tantalum Carbide Coating Cover

    Tantalum Carbide Coating Cover is composed of high-purity graphite and TaC coating. VeTek Semiconductor is a leading supplier and manufacturer of Tantalum Carbide Coating Cover in China. We focus on providing high-purity, high-temperature resistant tantalum carbide products. Our tantalum carbide coated cover have excellent performance and reliability, and can effectively protect materials in extremely high temperature and corrosive environments. We look forward to becoming your long-term partner in China. Welcome to consult at any time.
  • SiC Coating Epi susceptor

    SiC Coating Epi susceptor

    VeTek Semiconductor is a leading manufacturer, innovator of SiC Coating Epi Susceptor products in China. For many years, we have been focusing on various SiC Coating products such as SiC Coating Epi Susceptor, SiC coating ALD susceptor, etc. Welcome your further consultation.
  • CVD Tantalum Carbide(TaC) Coated Susceptor

    CVD Tantalum Carbide(TaC) Coated Susceptor

    The VETEK CVD TaC Coated Susceptor combines a high-purity isostatic graphite substrate with a dense CVD tantalum carbide (TaC) coating to deliver exceptional thermal stability, corrosion resistance, and low particle generation for demanding semiconductor epitaxy. Designed for SiC, GaN, and AlN epitaxial growth, it minimizes contamination, improves wafer temperature uniformity, and extends component service life in high-temperature MOCVD and CVD processes.

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