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Silicon carbide Cantilever Paddle for Wafer Processing
  • Silicon carbide Cantilever Paddle for Wafer ProcessingSilicon carbide Cantilever Paddle for Wafer Processing

Silicon carbide Cantilever Paddle for Wafer Processing

The Silicon Carbide Cantilever Paddle from Veteksemicon is engineered for advanced wafer processing in semiconductor manufacturing. Made of high-purity SiC, it delivers outstanding thermal stability, superior mechanical strength, and excellent resistance to high temperatures and corrosive environments. These features ensure precise wafer handling, extended service life, and reliable performance in processes such as MOCVD, epitaxy, and diffusion. Welcome to consult.

General product information

Place of Origin:
China
Brand Name:
Veteksemicon
Model Number:
SiC Paddles-01
Certification:
ISO9001


Product business terms

Minimum Order Quantity:
Subject to negotiation
Price:
Contact for Customized Quotation
Packaging Details:
Standard export package
Delivery Time:
Delivery Time: 30-45 Days After Order Confirmation
Payment Terms:
T/T
Supply Ability:
500units/Month


Application: Veteksemicon SiC paddles are key components in advanced semiconductor manufacturing, designed for core processes such as SiC power device epitaxy, high-temperature annealing, and gate oxidation for silicon-based chips.


Services that can be provided: customer application scenario analysis, matching materials, technical problem solving.


Company profile:Veteksemicon has 2 laboratories, a team of experts with 20 years of material experience, with R&D and production, testing and verification capabilities.


Veteksemicon SiC paddles are core load-bearing components designed specifically for high-temperature processes in semiconductor and silicon carbide chip manufacturing. Precision-manufactured from high-purity, high-density silicon carbide, our paddles demonstrate exceptional thermal stability and extremely low metal contamination in harsh environments exceeding 1200°C. They effectively ensure smooth and clean wafer transport during critical processes like diffusion and oxidation, serving as a reliable foundation for improving process yield and equipment performance.


Technical Parameters

Project
Parameter
Main Materials
High-purity reaction-bonded SiC / CVD SiC
Maximum operating temperature
1600°C (in inert or oxidizing atmosphere)
Metal impurity content
< 50 ppm (lower purity grades available upon request)
density
≥ 3.02 g/cm³
Bending strength
≥ 350 MPa
Coefficient of thermal expansion
4.5×10-6/K (20-1000°C)
Surface treatment
High-precision grinding, surface finish can reach Ra 0.4μm or less


Veteksemi SiC Paddles core advantages


 ● Ultimate purity, protecting chip yield

We use advanced processes to produce silicon carbide raw materials, ensuring minimal metallic impurities. Veteksemi SiC Paddles effectively suppress impurity precipitation in high-temperature environments for extended periods, preventing contamination of sensitive wafers and ensuring high-yield production from the source.


● Excellent heat resistance to meet extreme challenges

Silicon carbide itself has high-temperature resistance properties that surpass most ceramic materials. Our Paddles can easily handle process temperatures up to 1600°C, have an extremely low thermal expansion coefficient, and exhibit exceptional thermal shock resistance during repeated rapid heating and cooling cycles, minimizing the risk of deformation and cracking and extending service life.


● Extraordinary mechanical strength to ensure stable transmission

With extremely high rigidity and hardness, it maintains excellent morphological stability even when fully loaded with wafers. This ensures precise alignment of wafers during automated transfer, allowing them to smoothly enter and exit the furnace, reducing the risk of breakage due to vibration or deviation.


● Excellent corrosion resistance, extended service life

VetekSemicon SiC paddles exhibit strong chemical inertness in the presence of corrosive atmospheres such as oxygen and hydrogen commonly found in oxidation and diffusion processes, with extremely low surface erosion rates. This ensures stable dimensions and performance over long-term use, significantly reducing your overall cost of ownership.


Main application fields

Application direction
Typical scenario
Silicon carbide power device manufacturing
SiC epitaxy, high temperature ion implantation and annealing
Third-generation semiconductors
MOCVD pretreatment and annealing of GaN-on-Si and other materials
Discrete devices
High-temperature diffusion process for IGBT, MOSFET, etc.

Ecological chain verification endorsement

Veteksemicon SiC paddles' ecological chain verification covers raw materials to production, has passed international standard certification, and has a number of patented technologies to ensure its reliability and sustainability in the semiconductor and new energy fields.


For detailed technical specifications, white papers, or sample testing arrangements, please contact our Technical Support Team to explore how Veteksemicon can enhance your process efficiency.


Veteksemicon-products-warehouse

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