Products

China Silicon Carbide Paddle Manufacturer, Supplier, Factory

"Control the quality by the details, show the strength by quality". Our company has strived to establish a highly efficient and stable staff team and explored an effective quality control process for Silicon Carbide Paddle, SiC Wafer Paddle, SiC Diffusion Paddle, High Purity SiC Paddle, Sintered SiC Paddle, We sincerely welcome buddies to negotiate business enterprise and start cooperation with us. We hope to join hands with good friends in different industries to produce a brilliant long term.
Silicon Carbide Paddle, Each product is carefully made, it will make you satisfied. Our products in the production process have got strictly monitored, because it is only to provide you the best quality, we will feel confident. High production costs but low prices for our long-term cooperation. You can have a variety choices and the value of all types are same reliable. If you have any question, do not hesitate to ask us.

Hot Products

  • PSS Etching Carrier Plate for Semiconductor

    PSS Etching Carrier Plate for Semiconductor

    VeTek Semiconductor's PSS Etching Carrier Plate for Semiconductor is a high-quality, ultra-pure graphite carrier designed for wafer handling processes. Our carriers have excellent performance and can perform well in harsh environments, high temperatures and harsh chemical cleaning conditions. Our products are widely used in many European and American markets, and we look forward to becoming your long-term partner in China.You are welcome to come to China to visit our factory and learn more about our technology and products.
  • High Purity Graphite Paper

    High Purity Graphite Paper

    The high purity graphite paper provided by VeTek Semiconductor is a reliable and efficient sealing solution. High-purity graphite paper is a sealing material made of advanced graphite materials with excellent performance and reliability. It has excellent high-temperature resistance and can withstand sealing requirements under extreme temperature conditions. Welcome to inquire at any time. We look forward to becoming your long-term partner in China.
  • Aixtron Satellite wafer carrier

    Aixtron Satellite wafer carrier

    VeTek Semiconductor’s Aixtron Satellite Wafer Carrier is a wafer carrier used in AIXTRON equipment, mainly used in MOCVD processes, and is particularly suitable for high-temperature and high-precision semiconductor processing processes. The carrier can provide stable wafer support and uniform film deposition during MOCVD epitaxial growth, which is essential for the layer deposition process. Welcome your further consultation.
  • SiC Crystal Growth Porous Graphite

    SiC Crystal Growth Porous Graphite

    As a China leading SiC Crystal Growth Porous Graphite manufacturer , VeTek Semiconductor has been focusing on various Porous Graphite products for many years, such as Porous graphite crucible, High Purity Porous Graphite's investment and R&D, our Porous Graphite products have won high praise from European and American customers. Looking forward to your contact.
  • Tantalum Carbide Coating Ring

    Tantalum Carbide Coating Ring

    VeTek semiconductor Tantalum Carbide Coating Ring is a indispensable component in the semiconductor industry, specifically in the etching of SiC wafers. Its combination of a graphite base and TaC coating ensures superior performance in high-temperature and chemically aggressive environments. With its enhanced thermal stability, corrosion resistance, and mechanical strength, the Tantalum Carbide Coated Ring helps semiconductor manufacturers achieve precision, reliability, and high-quality results in their production processes.
  • SiC coated epitaxial reactor chamber

    SiC coated epitaxial reactor chamber

    Veteksemicon SiC Coated Epitaxial Reactor chamber is a core component designed for demanding semiconductor epitaxial growth processes. Utilizing advanced chemical vapor deposition (CVD), this product forms a dense, high-purity SiC coating on a high-strength graphite substrate, resulting in superior high-temperature stability and corrosion resistance. It effectively resists the corrosive effects of reactant gases in high-temperature process environments, significantly suppresses particulate contamination, ensures consistent epitaxial material quality and high yield, and substantially extends the maintenance cycle and lifespan of the reaction chamber. It is a key choice for improving the manufacturing efficiency and reliability of wide-bandgap semiconductors such as SiC and GaN.

Send Inquiry

X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept