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We are also specializing in improving the things management and QC method in order that we could retain terrific edge inside the fiercely-competitive small business for SiC CVD coated parts, 8 inch SiC epi top ring, SiC epitaxy ring, CVD silicon carbide ring, Semiconductor epitaxy components, We are now looking forward to even greater cooperation with overseas customers based on mutual benefits. If you are interested in any of our products, please feel free to contact us for more details.
SiC CVD coated parts, With the superior and exceptional service, we've been well developed along with our customers. Expertise and know-how ensure that we are always enjoying the trust from our customers in our business activities. "Quality", "honesty" and "service" is our principle. Our loyalty and commitments remain respectfully at your service. Contact Us Today For further information, contact us now.

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  • CVD Silicon Carbide(SiC) Coated RTP Susceptor

    CVD Silicon Carbide(SiC) Coated RTP Susceptor

    The CVD SiC coated RTP susceptor from VeTek Semiconductor serves rapid thermal processing (RTP) and rapid thermal annealing (RTA) equipment used throughout semiconductor manufacturing. The substrate is machined from high‑purity isostatic graphite, over which a dense CVD silicon carbide (SiC) layer is deposited. This construction yields high thermal conductivity, robust chemical inertness, and sustained dimensional stability under repeated high‑temperature cycling.
  • High Purity Quartz Etch Ring

    High Purity Quartz Etch Ring

    Dry plasma etch chambers rely on precise boundary control around the wafer to keep plasma density, gas flow, and electric-field distribution stable. VeTek Semiconductor High Purity Quartz Etch Rings are semiconductor-grade chamber components made from dehydroxylated fused quartz. They define the process zone at the wafer edge, help confine plasma, smooth gas flow, and protect the wafer periphery—supporting more uniform etch rates and cleaner profiles across 2–12 inch silicon, SiC, GaN, and sapphire wafers.
  • CVD SiC Coated Barrel Susceptor

    CVD SiC Coated Barrel Susceptor

    VeTek Semiconductor is a leading manufacturer and innovator of CVD SiC Coated graphite Susceptor in China. Our CVD SiC Coated Barrel Susceptor plays a key role in promoting the epitaxial growth of semiconductor materials on wafers with its excellent product characteristics. Welcome to your further consultation.
  • Graphite Disc Susceptor

    Graphite Disc Susceptor

    Vetek Semiconductor provide edge-cutting Graphite Disc Susceptor. The SiC coating provides superior thermal stability, excellent chemical resistance, and enhanced process uniformity, ensuring optimal performance and reliability. Experience the next level of efficiency and precision with Vetek Semiconductor's SiC-coated Disc Susceptor.
  • TaC Coating Ring

    TaC Coating Ring

    TaC Coating Ring is a high-performance component designed for use in semiconductor processes, VeTek semiconductor TaC Coating Ring has high thermal stability, resistance to chemical corrosion, and excellent mechanical strength and is specifically used to hold and support SiC wafers during the etching process, where precise control and durability are essential for achieving high-quality wafers. we are looking forward to your further consultation.
  • Semiconductor thermal spraying technology

    Semiconductor thermal spraying technology

    Vetek Semiconductor Semiconductor thermal spraying technology is an advanced process that sprays materials in a molten or semi-molten state onto the surface of a substrate to form a coating. This technology is widely used in the field of semiconductor manufacturing, mainly used to create coatings with specific functions on the surface of the substrate, such as conductivity, insulation, corrosion resistance, and oxidation resistance. The main advantages of thermal spraying technology include high efficiency, controllable coating thickness, and good coating adhesion, making it particularly important in the semiconductor manufacturing process that requires high precision and reliability. Looking forward to your inquiry.

  • Summary of Silicon Carbide (SiC) Manufacturing Process

    Silicon carbide abrasives are typically produced using quartz and petroleum coke as primary raw materials. In the preparatory stage, these materials undergo mechanical processing to achieve the desired particle size before being chemically proportioned into furnace charge.

  • What Exactly is the Third Generation Semiconductor?

    When you see the third-generation semiconductors, you will surely wonder what the first and second generations were. The "generation" here is classified based on the materials used in semiconductor manufacturing.

  • From 4-Inch to 8-Inch: A Decade of SiC Semiconductor Growth

    A decade of SiC evolution — from early 4-inch commercialization challenges to today's 8-inch wafer transition. Discover how CVD SiC coatings, Solid SiC, and TaC materials enable reliable semiconductor manufacturing.

  • What measurement equipment are there in the Fab factory? - VeTek semiconductor

    There are many types of measurement equipment in the Fab factory. Common equipment includes lithography process measurement equipment, etching process measurement equipment, thin film deposition process measurement equipment, doping process measurement equipment, CMP process measurement equipment, wafer particle detection equipment and other measurement equipment.

  • Do you know about MOCVD Susceptor?

    This article mainly introduces the product types, product characteristics and main functions of MOCVD Susceptor in semiconductor processing, and makes a comprehensive analysis and interpretation of MOCVD Susceptor products as a whole.

  • Application of TaC-Coated Graphite Parts in Single Crystal Furnaces

    In the growth of SiC and AlN single crystals using the physical vapor transport (PVT) method, crucial components such as the crucible, seed holder, and guide ring play a vital role. As depicted in Figure 2 [1], during the PVT process, the seed crystal is positioned in the lower temperature region, while the SiC raw material is exposed to higher temperatures (above 2400 ℃).

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