Silicon Carbide Shower Head

VeTek Semiconductor Silicon Carbide Shower Head is mainly made of SiC. In semiconductor processing, the main function of Silicon Carbide Shower Head is to evenly distribute the reaction gas to ensure the formation of a uniform film during chemical vapor deposition (CVD) or physical vapor deposition (PVD) processes. Due to the excellent properties of SiC such as high thermal conductivity and chemical stability, SiC Shower Head can work efficiently at high temperatures, reduce the unevenness of gas flow during the deposition process, and thus improve the quality of the film layer.

Silicon Carbide Shower Head can evenly distribute the reaction gas through multiple nozzles with the same aperture, ensure uniform gas flow, avoid local concentrations that are too high or too low, and thus improve the quality of the film. Combined with the excellent high temperature resistance and chemical stability of CVD SiC, no particles or contaminants are released during the film deposition process, which is critical to maintaining the purity of the film deposition.

Core performance matrix

Key indicators                              Technical specifications                                              Test standards

Base material 6N grade             Chemical vapor deposition silicon carbide                        SEMI F47-0703

Thermal conductivity (25℃)       330 W/(m·K) ±5%                                                       ASTM E1461

Operating temperature range     -196℃ ~ 1650℃ Cycle stability                                  MIL-STD-883 Method

Aperture machining accuracy      ±0.005mm (Laser microhole machining technology)            ISO 286-2

Surface roughness                      Ra ≤0.05μm (mirror grade treatment)                          JIS B 0601:2013

Triple process innovation advantage

Nanoscale airflow control

1080 hole matrix design: adopts asymmetric honeycomb structure to achieve 95.7% gas distribution uniformity (measured data)

Gradient aperture technology: 0.35mm outer ring → 0.2mm center progressive layout, eliminating edge effect

Zero contamination deposit protection

Ultra-clean surface treatment:

Ion beam etching removes the subsurface damaged layer

Atomic Layer Deposition (ALD) Al₂O₃ Protective Film (optional)

Thermal mechanical stability

Thermal deformation coefficient: ≤0.8μm/m·℃ (73% lower than traditional materials)

Passed 3000 thermal shock tests (RT↔1450℃ cycle)

SEM DATA OF CVD SIC FILM CRYSTAL STRUCTURE：

Basic physical properties of CVD SiC Coating：

VeTek Semiconductor Silicon Carbide Shower Head Shops：