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China SiC Coated Plate Carriers for MOCVD Manufacturer, Supplier, Factory

We have state-of-the-art equipment. Our products are exported for the USA, the UK and so on, enjoying a fantastic status among the clients for SiC Coated Plate Carriers for MOCVD, Aixtron MOCVD Reactor, MOCVD Wafer Carriers for Semiconductor Industry, Silicon Carbide Graphite Substrate MOCVD Susceptor, Semiconductor Wafer Carrier for MOCVD Equipment, If you're searching for a top quality, fast delivery, greatest following company and superior value supplier in China for long-term business partnership, we're going to be your best choice.
SiC Coated Plate Carriers for MOCVD, As operation principle is "be market-oriented , good faith as principle, win-win as objective", holding on "customer first, quality assurance, service first" as our purpose, dedicated to offer the original quality, create excellence service , we won the praise and trust in the industry of auto parts. In the future, We are going to give quality product and excellent service in return to our customers , welcome any suggestions and feedback from all over the world.

Hot Products

  • Porous Tantalum Carbide

    Porous Tantalum Carbide

    VeTek Semiconductor is a professional manufacturer and leader of Porous Tantalum Carbide products in China. Porous Tantalum Carbide is usually manufactured by chemical vapor deposition (CVD) method, ensuring precise control of its pore size and distribution, and is a material tool dedicated to high temperature extreme environments. Welcome your further consultation.
  • High purity CVD SiC raw material

    High purity CVD SiC raw material

    High purity CVD SiC raw material prepared by CVD is the best source material for silicon carbide crystal growth by physical vapor transport. The density of High purity CVD SiC raw material supplied by VeTek Semiconductor is higher than that of small particles formed by spontaneous combustion of Si and C-containing gases, and it does not require a dedicated sintering furnace and has a nearly constant evaporation rate. It can grow extremely high quality SiC single crystals. Looking forward to your inquiry.
  • High-purity Quartz Bath

    High-purity Quartz Bath

    In the critical steps of wafer cleaning, etching, and wet etching, high-purity quartz bath is more than just a container; it's the first line of defense for process success. Metal ion contamination, thermal shock cracking, chemical attack, and particle residue are hidden causes of yield fluctuations. Veteksemi is deeply rooted in semiconductor-grade quartz. Every quartz bath we manufacture is designed to provide uncompromising reliability and cleanliness for your cutting-edge processes.
  • Silicon Carbide Coated Epi Susceptor

    Silicon Carbide Coated Epi Susceptor

    VeTek Semiconductor is a leading manufacturer and supplier of SiC coating products in China. VeTek Semiconductor's silicon carbide coated Epi susceptor has the industry's top quality level, is suitable for multiple styles of epitaxial growth furnaces, and provides highly customized product services. VeTek Semiconductor looks forward to becoming your long-term partner in China.
  • VEECO LED EPI Susceptor

    VEECO LED EPI Susceptor

    VeTek Semiconductor's VEECO LED EPI Susceptor is designed for epitaxial growth of red and yellow LEDs. Advanced materials and CVD SiC coating technology ensure the thermal stability of the Susceptor, making the temperature field uniform during growth, reducing crystal defects, and improving the quality and consistency of epitaxial wafers. It is compatible with VEECO's epitaxial growth equipment and can be seamlessly integrated into the production line. Precise design and reliable performance help improve efficiency and reduce costs. Looking forward to your inquiries.
  • Porous Tantalum Carbide (TaC) Coated Graphite Ring

    Porous Tantalum Carbide (TaC) Coated Graphite Ring

    The VETEK Porous TaC Coated Graphite Ring is a thermal field component engineered for SiC single crystal growth via the PVT (Physical Vapor Transport) process. It is produced from high-purity porous graphite and coated with tantalum carbide (TaC) using CVD technology. The design targets high-temperature stability, chemical resilience, and controlled thermal field performance. By minimizing contamination and supporting process consistency, this component contributes to reproducible SiC crystal growth outcomes.

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