High purity CVD SiC raw material prepared by CVD is the best source material for silicon carbide crystal growth by physical vapor transport. The density of High purity CVD SiC raw material supplied by VeTek Semiconductor is higher than that of small particles formed by spontaneous combustion of Si and C-containing gases, and it does not require a dedicated sintering furnace and has a nearly constant evaporation rate. It can grow extremely high quality SiC single crystals. Looking forward to your inquiry.
VeTek Semiconductor has developed a new SiC single crystal raw material - High purity CVD SiC raw material. This product fills the domestic gap and is also at the leading level globally, and will be in a long-term leading position in the competition. Traditional silicon carbide raw materials are produced by the reaction of high-purity silicon and graphite, which are high in cost, low in purity and small in size.
VeTek Semiconductor's fluidized bed technology uses methyltrichlorosilane to generate silicon carbide raw materials through chemical vapor deposition, and the main by-product is hydrochloric acid. Hydrochloric acid can form salts by neutralizing with alkali, and will not cause any pollution to the environment. At the same time, methyltrichlorosilane is a widely used industrial gas with low cost and wide sources, especially China is the main producer of methyltrichlorosilane. Therefore, VeTek Semiconductor's High purity CVD SiC raw material has international leading competitiveness in terms of cost and quality.The purity of High purity CVD SiC raw material is higher than 99.9995%.
Advantages of High purity CVD SiC raw material
●Large size and high density
The average particle size is about 4-10mm, and the particle size of domestic Acheson raw materials is <2.5mm. The same volume crucible can hold more than 1.5kg of raw materials, which is conducive to solving the problem of insufficient supply of large-size crystal growth materials, alleviating the graphitization of raw materials, reducing carbon wrapping and improving crystal quality.
● Low Si/C ratio
It is closer to 1:1 than the Acheson raw materials of the self-propagating method, which can reduce the defects induced by the increase of Si partial pressure.
● High output value
The grown raw materials still maintain the prototype, reduce recrystallization, reduce the graphitization of raw materials, reduce carbon wrapping defects, and improve the quality of crystals.
● Higher purity
The purity of raw materials produced by the CVD method is higher than that of the Acheson raw materials of the self-propagating method. The nitrogen content has reached 0.09ppm without additional purification. This raw material can also play an important role in the semi-insulating field.
● Lower cost
The uniform evaporation rate facilitates process and product quality control, while improving the utilization rate of raw materials (utilization rate>50%, 4.5kg raw materials produce 3.5kg ingots), reducing costs.
● Low human error rate
Chemical vapor deposition avoids impurities introduced by human operation.
High purity CVD SiC raw material is a new generation product used to replace SiC powder to grow SiC single crystals. The quality of the grown SiC single crystals is extremely high. At present, VeTek Semiconductor has fully mastered this technology. And it is already able to supply this product to the market at a very advantageous price.
VeTek Semiconductor High purity CVD SiC raw material product shops:
For inquiries about Silicon Carbide Coating, Tantalum Carbide Coating, Special Graphite or price list, please leave your email to us and we will be in touch within 24 hours.
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies.Privacy Policy