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High purity CVD SiC raw material
  • High purity CVD SiC raw materialHigh purity CVD SiC raw material

High purity CVD SiC raw material

High purity CVD SiC raw material prepared by CVD is the best source material for silicon carbide crystal growth by physical vapor transport. The density of High purity CVD SiC raw material supplied by VeTek Semiconductor is higher than that of small particles formed by spontaneous combustion of Si and C-containing gases, and it does not require a dedicated sintering furnace and has a nearly constant evaporation rate. It can grow extremely high quality SiC single crystals. Looking forward to your inquiry.

VeTek Semiconductor has developed a new SiC single crystal raw material - High purity CVD SiC raw material. This product fills the domestic gap and is also at the leading level globally, and will be in a long-term leading position in the competition. Traditional silicon carbide raw materials are produced by the reaction of high-purity silicon and graphite, which are high in cost, low in purity and small in size. 


VeTek Semiconductor's fluidized bed technology uses methyltrichlorosilane to generate silicon carbide raw materials through chemical vapor deposition, and the main by-product is hydrochloric acid. Hydrochloric acid can form salts by neutralizing with alkali, and will not cause any pollution to the environment. At the same time, methyltrichlorosilane is a widely used industrial gas with low cost and wide sources, especially China is the main producer of methyltrichlorosilane. Therefore, VeTek Semiconductor's High purity CVD SiC raw material has international leading competitiveness in terms of cost and quality.The purity of High purity CVD SiC raw material is higher than 99.9995%.


Advantages of High purity CVD SiC raw material

High purity CVD SiC raw materials

 ● Large size and high density

The average particle size is about 4-10mm, and the particle size of domestic Acheson raw materials is <2.5mm. The same volume crucible can hold more than 1.5kg of raw materials, which is conducive to solving the problem of insufficient supply of large-size crystal growth materials, alleviating the graphitization of raw materials, reducing carbon wrapping and improving crystal quality.


 ● Low Si/C ratio

It is closer to 1:1 than the Acheson raw materials of the self-propagating method, which can reduce the defects induced by the increase of Si partial pressure.


 ● High output value

The grown raw materials still maintain the prototype, reduce recrystallization, reduce the graphitization of raw materials, reduce carbon wrapping defects, and improve the quality of crystals.


Higher purity

The purity of raw materials produced by the CVD method is higher than that of the Acheson raw materials of the self-propagating method. The nitrogen content has reached 0.09ppm without additional purification. This raw material can also play an important role in the semi-insulating field.

High purity CVD SiC raw material for SiC Single CrystalLower cost

The uniform evaporation rate facilitates process and product quality control, while improving the utilization rate of raw materials (utilization rate>50%, 4.5kg raw materials produce 3.5kg ingots), reducing costs.


 ● Low human error rate

Chemical vapor deposition avoids impurities introduced by human operation.


High purity CVD SiC raw material is a new generation product used to replace SiC powder to grow SiC single crystals. The quality of the grown SiC single crystals is extremely high. At present, VeTek Semiconductor has fully mastered this technology. And it is already able to supply this product to the market at a very advantageous price.


VeTek Semiconductor High purity CVD SiC raw material product shops:

SiC Coating Wafer CarrierSemiconductor process equipmentCVD SiC Focus RingSiC Single Crystal Equipment


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