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China SiC single crystal Manufacturer, Supplier, Factory

With this motto in mind, we've turn into one of quite possibly the most technologically innovative, cost-efficient, and price-competitive manufacturers for SiC single crystal, PVT method, TaC coated ring, Tantalum Carbide Coating, SiC crystal growth process, "Quality", "honesty" and "service" is our principle. Our loyalty and commitments remain respectfully at your support. Speak to Us Today For even more facts, get in touch with us now.
SiC single crystal, we have now complete material production line, assembling line , quality control system, and the most importantly, we now have many patents technology and experienced technical&production team, expert sales service team. With all those advantages, we're about to create"the reputable international brand of nylon monofilaments", and spreading our solutions to every corner of the world. We've been keep moving and try our best to serve our customers.

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  • SiC coating halfmoon graphite parts

    SiC coating halfmoon graphite parts

    As a professional semiconductor manufacturer and supplier, VeTek Semiconductor can provide a variety of graphite components required for SiC epitaxial growth systems. These SiC coating halfmoon graphite parts are designed for the gas inlet section of the epitaxial reactor and play a vital role in optimizing the semiconductor manufacturing process. VeTek Semiconductor always strives to provide customers with the best quality products at the most competitive prices. VeTek Semiconductor looks forward to becoming your long-term partner in China.
  • SiC Coated Barrel Susceptor

    SiC Coated Barrel Susceptor

    Epitaxy is a technique used in semiconductor device manufacturing to grow new crystals on an existing chip to make a new semiconductor layer.VeTek Semiconductor offers a comprehensive set of component solutions for LPE silicon epitaxy reaction chambers, delivering long lifespan, stable quality, and improved epitaxial layer yield. Our product such as SiC Coated Barrel Susceptor received position feedback from customers. We also provide technical support for Si Epi, SiC Epi, MOCVD, UV-LED Epitaxy, and more. Feel free to inquire for pricing information.
  • High purity graphite power

    High purity graphite power

    Vetek Semiconductor offers High purity graphite power that is a high quality product with a purity of up to 5ppm and meets the highest industry standards. Customizable particle form, mainly used for silicon carbide powder and diamond synthesis, suitable for semiconductor, electronics and high-tech industries. Welcome to inquiry us!
  • SiC Ceramic vacuum chuck for wafer

    SiC Ceramic vacuum chuck for wafer

    Veteksemicon SiC Ceramic Vacuum Chuck for Wafer is engineered to deliver exceptional precision and reliability in semiconductor wafer processing. Manufactured from high-purity silicon carbide, it ensures excellent thermal conductivity, chemical resistance, and superior mechanical strength, making it ideal for demanding applications such as etching, deposition, and lithography. Its ultra-flat surface guarantees stable wafer support, minimizing defects and improving process yield. this vacuum chuck is the trusted choice for high-performance wafer handling.
  • ALD Susceptor

    ALD Susceptor

    VeTek Semiconductor is a China professional ALD Susceptor manufacturer. Vetek jointly developed and produced SiC-coated ALD planetary bases with ALD system manufacturers to meet the high requirements of the ALD process. Welcome your consultation.
  • CVD SiC Coating Nozzle

    CVD SiC Coating Nozzle

    CVD SiC Coating Nozzles are crucial components used in the LPE SiC epitaxy process for depositing silicon carbide materials during semiconductor manufacturing. These nozzles are typically made of high-temperature and chemically stable silicon carbide material to ensure stability in harsh processing environments. Designed for uniform deposition, they play a key role in controlling the quality and uniformity of epitaxial layers grown in semiconductor applications. Welcome your further inquiry.

  • Uses of solid silicon carbide

    Solid silicon carbide (SiC) has become one of the key materials in semiconductor manufacturing due to its unique physical properties. The following is an analysis of its advantages and practical value based on its physical properties and its specific applications in semiconductor equipment (such as wafer carriers, shower heads, etching focus rings, etc.).

  • What is the difference between epitaxy and ALD?

    The main difference between epitaxy and atomic layer deposition (ALD) lies in their film growth mechanisms and operating conditions. Epitaxy refers to the process of growing a crystalline thin film on a crystalline substrate with a specific orientation relationship, maintaining the same or similar crystal structure. In contrast, ALD is a deposition technique that involves exposing a substrate to different chemical precursors in sequence to form a thin film one atomic layer at a time.

  • Veteksemicon shines at the 2025 Shanghai SEMICON International Exhibition

    Veteksemicon shines at 2025 Shanghai SEMICON International Exhibition, leading the future of semiconductor industry with innovative technologies

  • Different technical routes of SiC epitaxial growth furnace

    Silicon carbide substrates have many defects and cannot be processed directly. A specific single crystal thin film needs to be grown on them through an epitaxial process to make chip wafers. This thin film is the epitaxial layer. Almost all silicon carbide devices are realized on epitaxial materials. High-quality silicon carbide homogeneous epitaxial materials are the basis for the development of silicon carbide devices. The performance of epitaxial materials directly determines the realization of the performance of silicon carbide devices.

  • Thermal Field Design for SiC Single Crystal Growth

    With the growing demand for SiC materials in power electronics, optoelectronics and other fields, the development of SiC single crystal growth technology will become a key area of ​​scientific and technological innovation. As the core of SiC single crystal growth equipment, thermal field design will continue to receive extensive attention and in-depth research.

  • The Application of Quartz Components in Semiconductor Equipment

    Quartz products are widely used in the semiconductor manufacturing process due to their high purity, high-temperature resistance, and strong chemical stability.

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