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China Tantalum Carbide Coating Manufacturer, Supplier, Factory

Our primary goal is to offer our clients a serious and responsible business relationship, providing personalized attention to all of them for Tantalum Carbide Coating, CVD TaC Coated Graphite Ring, Semiconductor Process Parts, Welcome all customers of home and abroad to visit our company, to forge a brilliant future by our cooperation.
Tantalum Carbide Coating, Our company promises: reasonable prices, short production time and satisfactory after-sales service, we also welcome you to visit our factory at any time you want. Wish we have a pleasant and long terms business together!!!

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    Flat susceptor and barrel susceptor are the main shape of epi susceptors.VeTek Semiconductor is a leading LPE Si Epi Susceptor Set manufacturer and innovator in China.We have been specialized in SiC coating and TaC coating for many years.We offer a LPE Si Epi Susceptor Set designed specifically for LPE PE2061S 4" wafers. The matching degree of graphite material and SiC coating is good, the uniformity is excellent, and the life is long, which can improve the yield of epitaxial layer growth during the LPE (Liquid Phase Epitaxy) process.We welcome you to visit our factory in China.
  • Ion Beam Sputter sources grid

    Ion Beam Sputter sources grid

    Ion beam is mainly used for ion etching, ion coating and plasma injection. The role of the Ion Beam Sputter sources grid is to dissect the ions and accelerate them to the required energy. Vetek Semiconductor provides high purity graphite ion beam Ion Beam Sputter sources grid for optical lens ion beam polishing, semiconductor wafer modification, etc. Welcome to inquire about customized products.
  • Ultra Pure Silicon Carbide Powder for Crystal Growth

    Ultra Pure Silicon Carbide Powder for Crystal Growth

    VeTek Semiconductor is a professional manufacturer and supplier, dedicated to providing high-quality Ultra Pure Silicon Carbide Powder for Crystal Growth. With a purity of up to 99.999% wt and extremely low impurity levels of nitrogen, boron, aluminum, and other contaminants, it is specifically designed to enhance the semi-insulating properties of high-purity silicon carbide. Welcome to inquire and cooperate with us!
  • Porous Ceramic Vacuum Chuck

    Porous Ceramic Vacuum Chuck

    Vetek Semiconductor's Porous Ceramic Vacuum Chuck is made of silicon carbide ceramic (SiC) material, which has excellent high temperature resistance, chemical stability and mechanical strength. It is an indispensable core component in the semiconductor process. Welcome your further inquiries.
  • SiC Coating Cover Segments

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    Vtech Semiconductor is committed to the development and commercialization of CVD SiC coated parts for Aixtron reactors. As an example, our SiC Coating Cover Segments have been carefully processed to produce a dense CVD SiC coating with excellent corrosion resistance, chemical stability, welcome to discuss application scenarios with us.
  • silicon carbide ceramic coating heater

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    The silicon carbide ceramic coating heater is mainly designed for the high temperature and harsh environment of semiconductor manufacturing. Its ultra-high melting point, excellent corrosion resistance and outstanding thermal conductivity determine the indispensability of this product in the semiconductor production process.

  • Can Silicon Carbide Ceramics Withstand Extreme Industrial Environments

    At VeTek Semiconductor, we've specialized in pushing the boundaries of what's possible with advanced Silicon Carbide Ceramics, developing grades specifically engineered to thrive where other materials falter.

  • What is the difference between CVD TaC and sintered TaC?

    This article first introduces the molecular structure and physical properties of TaC, and focuses on the differences and applications of sintered tantalum carbide and CVD tantalum carbide, as well as VeTek Semiconductor's popular TaC coating products.

  • What is the difference between silicon carbide (SiC) and gallium nitride (GaN) applications? - VeTek Semiconductor

    SiC and GaN are wide bandgap semiconductors with advantages over silicon, such as higher breakdown voltages, faster switching speeds, and superior efficiency. SiC is better for high-voltage, high-power applications due to its higher thermal conductivity, while GaN excels in high-frequency applications thanks to its superior electron mobility.

  • What is semiconductor epitaxy process?

    It is ideal to build integrated circuits or semiconductor devices on a perfect crystalline base layer. The epitaxy (epi) process in semiconductor manufacturing aims to deposit a fine single-crystalline layer, usually about 0.5 to 20 microns, on a single-crystalline substrate. The epitaxy process is an important step in the manufacture of semiconductor devices, especially in silicon wafer manufacturing.

  • What is hot pressed SiC ceramics?

    Hot pressing sintering is the main method for preparing high-performance SiC ceramics. The process of hot pressing sintering includes: selecting high-purity SiC powder, pressing and molding under high temperature and high pressure, and then sintering. SiC ceramics prepared by this method have the advantages of high purity and high density, and are widely used in grinding discs and heat treatment equipment for wafer processing.

  • Semiconductor process: Chemical Vapor Deposition (CVD)

    Chemical vapor deposition (CVD) in semiconductor manufacturing is used to deposit thin film materials in the chamber, including SiO2, SiN, etc., and commonly used types include PECVD and LPCVD. By adjusting the temperature, pressure and reaction gas type, CVD achieves high purity, uniformity and good film coverage to meet different process requirements.

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