Tantalum Carbide Coated Ring

VeTek semiconductor Tantalum Carbide Coated Ring is crafted from graphite and coated with tantalum carbide, a combination that leverages the best properties of both materials to ensure superior performance and longevity. 

The TaC coating on the Tantalum Carbide Coating Ring ensures that it remains chemically inert in the reactive atmospheres of SiC crystal growth furnaces, which often involve gases such as hydrogen, argon, and nitrogen. This chemical inertness is vital to prevent any contamination of the growing crystal, which could lead to defects and reduced performance of the final semiconductor products. Additionally, the thermal stability provided by the TaC coating allows the Tantalum Carbide Coating Ring to operate effectively at the high temperatures required for SiC crystal growth, typically exceeding 2000°C.

Dense and uniform TaC coating can be prepared on graphite surface by plasma spraying, CVD method and slurry sintering method, but plasma spraying method has high equipment requirements and Ta2C formation. It is difficult to prepare composite coating by slurry sintering method, and the thermal shock resistance of coating is poor. The coating prepared by CVD method has controllable composition and highest density, which is a common tantalum carbide coating method at present.

The mechanical properties of TaC greatly reduce wear and tear on the Tantalum Carbide Coating Ring. This is crucial due to the repetitive nature of the crystal growth process, which exposes the guide ring to frequent thermal cycles and mechanical stresses. TaC's hardness and wear resistance ensure that the TaC Coated Ring maintains its structural integrity and precise dimensions over long periods, minimizing the need for frequent replacements and reducing downtime in the manufacturing process. 

The bulk density of tantalum carbide coating is 14.3gm/cm3,Emissivity 0.3,Hardness is 2000HK,melting point is 3950s℃, and good physical properties have been selected as a common material for the third generation of semiconductors.

Additionally, the combination of graphite and TaC in the Tantalum Carbide Coating Ring optimizes thermal management within the crystal growth furnace. Graphite's high thermal conductivity efficiently distributes heat, preventing hotspots and promoting uniform crystal growth. Meanwhile, the TaC coating serves as a thermal barrier, protecting the graphite core from direct exposure to high temperatures and reactive gases. This synergy between the core and coating materials results in a guide ring that not only withstands the harsh conditions of SiC crystal growth but also enhances the overall efficiency and quality of the process.

VeTek semiconductor Tantalum Carbide Coated Ring is an essential component in the semiconductor industry, specifically designed for the growth of Silicon Carbide crystals. Its design harnesses the strengths of graphite and tantalum carbide to deliver exceptional performance in high-temperature, high-stress environments. The TaC coating ensures chemical inertness, mechanical durability, and thermal stability, all of which are critical for producing high-quality SiC crystals. By maintaining its integrity and functionality under extreme conditions, the ring supports the efficient and defect-free growth of SiC crystals, contributing to the advancement of high-power and high-frequency semiconductor devices.

VeTek Semiconductor is a leading manufacturer and supplier of Tantalum Carbide Coating, Silicon Carbide Coating and Special Graphite in China. We have long been committed to providing advanced technology and product solutions for the semiconductor industry, and sincerely hope to be your long-term partner in China.

Tantalum carbide (TaC) coating on a microscopic cross-section：

Overview of the semiconductor chip epitaxy industry chain：