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TaC Coating Crucible
  • TaC Coating CrucibleTaC Coating Crucible

TaC Coating Crucible

As a professional TaC Coating Crucible Supplier and Manufacturer in China, VeTek Semiconductor's TaC Coating Crucible plays an irreplaceable role in the Single crystal growth process of semiconductors with its excellent thermal conductivity, outstanding chemical stability and enhanced corrosion resistance. Welcome your further inquiries.

VeTek Semiconductor's CVD TaC coated crucibles usually play the following key roles in the PVT method SiC single crystal growth process:


The PVT method refers to placing a SiC seed crystal on top of the TaC coated crucible, and placing SiC powder as a raw material at the bottom of the crucible. In a closed environment of high temperature and low pressure, the SiC powder sublimates, and under the action of temperature gradient and concentration difference, the SiC powder is transferred to the vicinity of the seed crystal, and reaches a supersaturated state after recrystallization. Therefore, the PVT method can achieve controllable growth of SiC crystal size and specific crystal form.


● Thermal stability of crystal growth

VeTek Semiconductor TaC coated crucibles have excellent thermal stability (can remain stable below 2200℃), which helps to maintain their structural integrity even at the extremely high temperatures required for single crystal growth. This physical property enables the SiC coated graphite crucible to precisely control the crystal growth process, resulting in highly uniform and defect-free crystals.


● Excellent Chemical Barrier

TaC coated crucibles combine a tantalum carbide coating with a high purity graphite crucible to provide excellent resistance to a wide range of corrosive chemicals and molten materials commonly encountered during SiC single crystal growth. This property is critical to achieving high quality crystals with minimal defects.


● Damping Vibrations for a Stable Growth Environment

The excellent damping properties of the TaC coated crucible minimize vibrations and thermal shock within the graphite crucible, further contributing to a stable and controlled crystal growth environment. By mitigating these potential sources of interference, the TaC coating enables the growth of larger, more uniform crystals with reduced defect density, ultimately increasing device yields and improving device performance.


● Excellent Thermal Conductivity

Veteksemicon's coated crucibles have excellent thermal conductivity, which helps the graphite crucible to transfer heat quickly and evenly. This determines the precise control of temperature throughout the crystal growth process, minimizing crystal defects caused by thermal gradients.


Tantalum carbide (TaC) coating on a microscopic cross-section

Tantalum carbide (TaC) coating on a microscopic cross-section


Physical properties of Tantalum Carbide Coating

Physical properties of TaC coating
Density
14.3 (g/cm³)
Specific emissivity
0.3
Thermal expansion coefficient
6.3*10-6/K
Hardness (HK)
2000 HK
Resistance
1×10-5 Ohm*cm
Thermal stability
<2500℃
Graphite size changes
-10~-20um
Coating thickness
≥20um typical value (35um±10um)

VeTek Semiconductor production shops

SiC Coating Graphite substrateTaC Coating Crucible testSilicon carbide ceramic processingSemiconductor process equipment


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