4H Semi Insulating Type SiC Substrate

SiC wafer plays multiple key roles in the semiconductor processing process. Combined with its high resistivity, high thermal conductivity, wide bandgap and other properties, it is widely used in high-frequency, high-power and high-temperature fields, especially in microwave and RF applications. It is an indispensable component product in the semiconductor manufacturing process.

Main advantage

1. Excellent electrical properties

High critical breakdown electric field (about 3 MV/cm) : about 10 times higher than silicon, can support higher voltage and thinner drift layer design, significantly reduce on-resistance, suitable for high voltage power devices.

Semi-insulating properties: High resistivity (>10^5 Ω·cm) through vanadium doping or intrinsic defect compensation, suitable for high frequency, low loss RF devices (such as HEMTs), reducing parasitic capacitance effects.

2. Thermal and chemical stability

High thermal conductivity (4.9W /cm·K) : Excellent heat dissipation performance, support high temperature work (theoretical working temperature can reach 200℃ or more), reduce the system heat dissipation requirements.

Chemical inertness: inert to most acids and alkalis, strong corrosion resistance, suitable for harsh environment.

3. Material structure and crystal quality

4H polytypic structure: The hexagonal structure provides higher electron mobility (e.g., longitudinal electron mobility of about 1140 cm²/V·s), which is superior to other polytypic structures (e.g. 6H-SiC) and is suitable for high frequency devices.

High quality epitaxial growth: Low defect density heterogeneous epitaxial films (such as epitaxial layers on AlN/Si composite substrates) can be achieved through CVD (chemical vapor deposition) technology, improving device reliability.

4. Process compatibility

Compatible with silicon process: SiO₂ insulation layer can be formed through thermal oxidation, which is easy to integrate silicon-based process devices such as MOSFET.

Ohmic contact optimization: The use of multi-layer metal (such as Ni/Ti/Pt) alloying process, reduce the contact resistance (such as Ni/Si/Al structure contact resistance as low as 1.3×10^-4 Ω·cm), improve device performance.

5. Application Scenarios

Power electronics: Used to manufacture high-voltage Schottky diodes (SBD), IGBT modules, etc., supporting high switching frequencies and low loss.

Rf devices: suitable for 5G communication base stations, radar and other high-frequency scenarios, such as AlGaN/GaN HEMT devices.

Vetek Semiconductor is constantly pursuing higher crystal quality and processing quality to meet customer needs.Currently, 4-inch and 6-inch products are available, and 8-inch products are under development. 

Semi-Insulating SiC Substrate BASIC PRODUCT SPECIFICATIONS:

Semi-Insulating SiC Substrate CRYSTAL QUALITY SPECIFICATIONS:

4H Semi Insulating Type SiC Substrate Detection Method and Terminology: