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Silicon On Insulator Wafer
  • Silicon On Insulator WaferSilicon On Insulator Wafer
  • Silicon On Insulator WaferSilicon On Insulator Wafer

Silicon On Insulator Wafer

VeTek Semiconductor is a professional Chinese manufacturer of Silicon On Insulator Wafer. the Silicon On Insulator Wafer is an important semiconductor substrate material, and its excellent product characteristics make it play a key role in high-performance, low-power, high-integration and RF applications. Looking forward to your consultation.

The working principle of VeTek Semiconductor’s Silicon On Insulator Wafer mainly relies on its unique structure and material properties. And SOI wafer consists of three layers: the top layer is a single-crystal silicon device layer, the middle is an insulating Buried OXide (BOX) layer, and the bottom layer is a supporting silicon substrate.

Silicon On Insulator Wafers(SOI) Structure

the Structure of Silicon On Insulator Wafers (SOI)


Formation of the insulation layer: Silicon On Insulator Wafer is usually manufactured using Smart Cut™ technology or SIMOX (Separation by IMplanted OXygen) technology. Smart Cut™ technology injects hydrogen ions into the silicon wafer to form a bubble layer, and then bonds the hydrogen-injected wafer to the supporting silicon wafer



After heat treatment, the hydrogen-injected wafer is split from the bubble layer to form an SOI structure. SIMOX technology implants high-energy oxygen ions into silicon wafers to form a silicon oxide layer at high temperatures.


Reduce parasitic capacitance: The BOX layer of the Silicon carbide Wafer effectively isolates the device layer and the base silicon, significantly reducing parasitic capacitance. This isolation reduces power consumption and increases device speed and performance.




Avoid latch-up effects: The n-well and p-well devices in the SOI wafer are completely isolated, avoiding the latch-up effect in traditional CMOS structures. This allows wafer SOI to be manufactured at higher speeds.


Etch stop function: The single crystal silicon device layer and BOX layer structure of SOI wafer facilitates the manufacturing of MEMS and optoelectronic devices, providing excellent etch stop function.


Through these characteristics, Silicon On Insulator Wafer plays an important role in semiconductor processing and promote the continuous development of the integrated circuit (IC) and microelectromechanical systems (MEMS) industries. We sincerely look forward to further communication and cooperation with you.


The 200mm SOl wafers specification parameter:


                                                                                                       200 mm SOl wafers specification
No
Description
Value
                                                                                                                  Device Silicon layer
1.1 Thickness
220 nm +/-10 nm
1.2 Production method
CZ
1.3 Crystal orientation
<100>
1.4 Conductivity type p
1.5 Dopant Boron
1.6 Resistivity average
8.5 - 11.5 0hm*cm
1.7 RMS (2x2 um)
<0.2
1.8 LPD (Size>0.2um)
<75
1.9 Large defects larger than 0.8 microns (Area)
<25
1.10

Edge Chip,Scratch, Crack,Dimple/Pit,Haze,Orange Peel ( visual inspection)

0
1.11 Bonding voids:visual inspection >0.5mm diameter
0



Silicon On Insulator Wafers Production shops:


Silicon On Insulator Wafers shops


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