Web Menu

Product Search

Language

Products

China Epi Susceptor based Graphite Manufacturer, Supplier, Factory

No matter new customer or outdated client, We believe in extensive phrase and trusted relationship for Epi Susceptor based Graphite, CVD SiC coating Epi susceptor, SiC Coating Epitaxy susceptor, MOCVD LED Epi Susceptor, Wafer processing, We recognize your enquiry and it can be our honor to work with each mate globally.
Epi Susceptor based Graphite, Our company offers the full range from pre-sales to after-sales service, from product development to audit the use of maintenance, based on strong technical strength, superior product performance, reasonable prices and perfect service, we are going to continue to develop, to supply the high-quality merchandise and services, and promote lasting cooperation with our customers, common development and create a better future.

Related Products

Hot Products

  • SiC Coating Cover Segments

    SiC Coating Cover Segments

    Vtech Semiconductor is committed to the development and commercialization of CVD SiC coated parts for Aixtron reactors. As an example, our SiC Coating Cover Segments have been carefully processed to produce a dense CVD SiC coating with excellent corrosion resistance, chemical stability, welcome to discuss application scenarios with us.
  • SiC coated Satellite cover for MOCVD

    SiC coated Satellite cover for MOCVD

    SiC coated satellite cover for MOCVD plays an irreplaceable role in ensuring high-quality epitaxial growth on wafers due to its extremely high temperature resistance, excellent corrosion resistance and outstanding oxidation resistance.
  • Tantalum Carbide (TaC) Coated Porous Graphite for SiC Crystal Growth

    Tantalum Carbide (TaC) Coated Porous Graphite for SiC Crystal Growth

    VeTek Semiconductor Tantalum Carbide Coated Porous Graphite is the latest innovation in Silicon Carbide (SiC) crystal growth technology. Engineered for high-performance thermal fields, this advanced composite material provides a superior solution for vapor phase management and defect control in the PVT (Physical Vapor Transport) process.
  • Ceramic Electrostatic Chuck

    Ceramic Electrostatic Chuck

    Ceramic Electrostatic Chuck is widely used in semiconductor manufacturing and processing to fix wafers. It is an indispensable tool for high-precision wafer processing. VeTek Semiconductor is an experienced manufacturer and supplier of Ceramic Electrostatic Chuck, and can provide highly customized products according to different customer needs.
  • PSS Etching Carrier Plate for Semiconductor

    PSS Etching Carrier Plate for Semiconductor

    VeTek Semiconductor's PSS Etching Carrier Plate for Semiconductor is a high-quality, ultra-pure graphite carrier designed for wafer handling processes. Our carriers have excellent performance and can perform well in harsh environments, high temperatures and harsh chemical cleaning conditions. Our products are widely used in many European and American markets, and we look forward to becoming your long-term partner in China.You are welcome to come to China to visit our factory and learn more about our technology and products.
  • 8-Inch CVD Silicon Carbide (SiC) Coated Epitaxy Top Ring

    8-Inch CVD Silicon Carbide (SiC) Coated Epitaxy Top Ring

    The 8-inch SiC epi top ring is a hardware part for semiconductor reactors. It works inside Si/SiC epitaxy and MOCVD/CVD systems. This ring stabilizes the heat inside the chamber. It also controls the flow of gases. The material is high-purity CVD Silicon Carbide. It does not have the outgassing issues of graphite. It also reduces particle contamination during production.We welcome your inquiries.

  • Characteristics of silicon epitaxy

    High purity: The silicon epitaxial layer grown by chemical vapor deposition (CVD) has extremely high purity, better surface flatness and lower defect density than traditional wafers.

  • Semiconductor process: Chemical Vapor Deposition (CVD)

    Chemical vapor deposition (CVD) in semiconductor manufacturing is used to deposit thin film materials in the chamber, including SiO2, SiN, etc., and commonly used types include PECVD and LPCVD. By adjusting the temperature, pressure and reaction gas type, CVD achieves high purity, uniformity and good film coverage to meet different process requirements.

  • Silicon(Si) epitaxy preparation technology

    Single crystal materials alone cannot meet the needs of the growing production of various semiconductor devices. At the end of 1959, a thin layer of single crystal material growth technology - epitaxial growth was developed.

  • Summary of Silicon Carbide (SiC) Manufacturing Process

    Silicon carbide abrasives are typically produced using quartz and petroleum coke as primary raw materials. In the preparatory stage, these materials undergo mechanical processing to achieve the desired particle size before being chemically proportioned into furnace charge.

  • What is step-controlled epitaxial growth？

  • Sanan Optoelectronics Co., Ltd.: 8-inch SiC chips are expected to be put into production in December!

    As a leading manufacturer in the SiC industry, Sanan Optoelectronics' related dynamics have received widespread attention in the industry. Recently, Sanan Optoelectronics disclosed a series of latest developments, involving 8-inch transformation, new substrate factory production, establishment of new companies, government subsidies and other aspects.

Send Inquiry

X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies.Privacy Policy
RejectAccept