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High Purity Silicon Carbide (SiC) Powder

High Purity Silicon Carbide (SiC) Powder

VeTek Semiconductor High Purity Silicon Carbide (SiC) Powder is specially developed for SiC crystal growth, semiconductor materials, and advanced ceramic applications. Through advanced purification technology and strict quality control, our SiC powder offers ultra-low impurity levels, stable particle distribution, and excellent consistency for demanding manufacturing processes.
Pyrolytic Carbon(PyC) Coated Graphite Ring

Pyrolytic Carbon(PyC) Coated Graphite Ring

In SiC PVT crystal growth setups, graphite parts are run at very high temperatures for long periods. VeTek’s PyC coated graphite ring is built for that kind of duty. A pyrolytic carbon layer gets deposited onto high-purity graphite via CVD. This gives the part better surface stability and fewer particles coming off during operation. You usually put it in the thermal field area to help manage vapor flow and how heat spreads inside the furnace. The coating also slows down graphite sublimation when things go above 2200°C, which makes the whole component last longer.
Solid SiC Focus Rings

Solid SiC Focus Rings

Designed to surround the wafer tracking zone, the Solid SiC Focus Ring ensures linear plasma distribution and exact edge-to-center etch profiles.These premium β-SiC components are built by Vetek Semiconductor (Wuyi Tianyao New Material Technology Co., LTD) using proprietary Chemical Vapor Deposition (CVD) technology. By vaporizing raw materials into a dense, binderless matrix, Vetek eliminates the porous micro-gaps common in older materials. Compared to standard quartz or silicon shielding, our CVD SiC components stand up far better to corrosive halogen gases, shielding the wafer in deep sub-7nm logic and dense memory chip manufacturing.Looking forward to your further inquiry.
AMAT 0200-03201 CVD SiC Wafer Lift Pin

AMAT 0200-03201 CVD SiC Wafer Lift Pin

This AMAT 0200-03201 Wafer Lift Pin from VeTek starts with high-purity graphite, then we add a dense CVD SiC coating on top. It’s made for 300mm epitaxy systems and Applied Materials EPI reactors. Why graphite and SiC? Graphite handles heat really well. The SiC layer takes on corrosive gases and doesn’t wear out fast. The thin wall design? That’s for cleaner wafer lifting and positioning, fewer particles, and longer part life under high temperatures. We also make similar SiC coated graphite parts for ASM, Aixtron, and LPE systems. Looking forward to your inquiry.
Wafer Carrier for VEECO MOCVD (LED Epitaxy)

Wafer Carrier for VEECO MOCVD (LED Epitaxy)

Vetek Semiconductor makes wafer carriers for VEECO MOCVD systems, built specifically for LED epitaxy work like GaN LEDs, blue-green LEDs, and deep UV LED growth. These carriers start with high-purity graphite and get a dense CVD silicon carbide (SiC) coating. That combination holds up well under the high temperatures you see in MOCVD – good thermal stability, corrosion resistance, and the coating lasts.
Halfmoon for LPE Reaction Chamber

Halfmoon for LPE Reaction Chamber

The Halfmoon is a graphite component used inside LPE SiC reactors, mainly installed around the chamber hot zone. Although it does not directly contact the wafer, it still plays a role in gas flow stability and reactor operation during epitaxial growth.To handle high temperature and reactive process conditions, the component is usually protected with CVD SiC coating, while TaC coating is also available for some applications. VETEK also supplies graphite felt insulation and other coated graphite parts for SiC epitaxy systems.
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