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  • Tantalum Carbide Coating Cover

    Tantalum Carbide Coating Cover

    Tantalum Carbide Coating Cover is composed of high-purity graphite and TaC coating. VeTek Semiconductor is a leading supplier and manufacturer of Tantalum Carbide Coating Cover in China. We focus on providing high-purity, high-temperature resistant tantalum carbide products. Our tantalum carbide coated cover have excellent performance and reliability, and can effectively protect materials in extremely high temperature and corrosive environments. We look forward to becoming your long-term partner in China. Welcome to consult at any time.
  • SiC Coating Cover Segments

    SiC Coating Cover Segments

    Vtech Semiconductor is committed to the development and commercialization of CVD SiC coated parts for Aixtron reactors. As an example, our SiC Coating Cover Segments have been carefully processed to produce a dense CVD SiC coating with excellent corrosion resistance, chemical stability, welcome to discuss application scenarios with us.
  • High purity graphite powder

    High purity graphite powder

    Vetek Semiconductor offers High purity graphite powder that is a high quality product with a purity of up to 5ppm and meets the highest industry standards. Customizable particle form, mainly used for silicon carbide powder and diamond synthesis, suitable for semiconductor, electronics and high-tech industries. Welcome to inquiry us!
  • TaC Coated Graphite Susceptor

    TaC Coated Graphite Susceptor

    VeTek Semiconductor’s TaC Coated Graphite Susceptor uses chemical vapor deposition(CVD) method to prepare tantalum carbide coating on the surface of graphite parts. This process is the most mature and has the best coating properties. TaC Coated Graphite Susceptor can extend the service life of graphite components, inhibit the migration of graphite impurities, and ensure the quality of epitaxy.We are looking forward to your inquiry.
  • SiC Coated Top Plate for LPE PE2061S

    SiC Coated Top Plate for LPE PE2061S

    VeTek Semiconductor has been deeply engaged in SiC coating products for many years and has become a leading manufacturer and supplier of SiC Coated Top Plate for LPE PE2061S in China. The SiC Coated Top Plate for LPE PE2061S we provide is designed for LPE silicon epitaxial reactors and is located on the top together with the barrel base. This SiC Coated Top Plate for LPE PE2061S has excellent characteristics such as high purity, excellent thermal stability and uniformity, which helps to grow high-quality epitaxial layers. No matter what product you need, we look forward to your inquiry.
  • Silicon carbide Cantilever Paddle for Wafer Processing

    Silicon carbide Cantilever Paddle for Wafer Processing

    The Silicon Carbide Cantilever Paddle from Veteksemicon is engineered for advanced wafer processing in semiconductor manufacturing. Made of high-purity SiC, it delivers outstanding thermal stability, superior mechanical strength, and excellent resistance to high temperatures and corrosive environments. These features ensure precise wafer handling, extended service life, and reliable performance in processes such as MOCVD, epitaxy, and diffusion. Welcome to consult.

  • The challenges of silicon carbide crystal growth furnaces

    Silicon carbide (SiC) crystal growth furnaces play a vital role in producing high-performance Sic wafers for next-generation semiconductor devices. However, the process of growing high-quality SiC crystals presents significant challenges. From managing extreme thermal gradients to reducing crystal defects, ensuring uniform growth, and controlling production costs, each step requires advanced engineering solutions. This article will analyze the technical challenges of SIC crystal growth furnaces from multiple perspectives.

  • Semiconductor process: Chemical Vapor Deposition (CVD)

    Chemical vapor deposition (CVD) in semiconductor manufacturing is used to deposit thin film materials in the chamber, including SiO2, SiN, etc., and commonly used types include PECVD and LPCVD. By adjusting the temperature, pressure and reaction gas type, CVD achieves high purity, uniformity and good film coverage to meet different process requirements.

  • Welcome Customers to Visit Veteksemicon's Carbon Fiber Products Factory

    On September 5, 2025, a customer from Poland visited a factory under VETEK to learn about our advanced technologies and innovative processes in the production of carbon fiber products.

  • Thermal Field Design for SiC Single Crystal Growth

    With the growing demand for SiC materials in power electronics, optoelectronics and other fields, the development of SiC single crystal growth technology will become a key area of ​​scientific and technological innovation. As the core of SiC single crystal growth equipment, thermal field design will continue to receive extensive attention and in-depth research.

  • What is The Third-generation Semiconductor Industry?

    Semiconductor materials can be classified into three generations in chronological order. The first generation consists of common elemental materials such as germanium and silicon, which are characterized by convenient switching and are generally used in integrated circuits. The second-generation compound semiconductors such as gallium arsenide and indium phosphide are mainly used in luminescent and communication materials.

  • Three SiC single crystal growth technologies

    The main methods for growing SiC single crystals are: physical vapor transport (PVT), high temperature chemical vapor deposition (HTCVD) and high temperature solution growth (HTSG).

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