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China MOCVD epitaxial growth Manufacturer, Supplier, Factory

The client satisfaction is our primary concentrate on. We uphold a consistent level of professionalism, top quality, credibility and service for MOCVD epitaxial growth, SiC Coated Pedestal, SiC Coated Substrate, CVD SiC coating, Graphite tray, To significantly improve our assistance quality, our company imports a large number of international advanced devices. Welcome clients from your home and abroad to simply call and inquire!
MOCVD epitaxial growth, Our organization. Situated inside the national civilized cities, the visitors is very easy, unique geographical and economic situations. We pursue a "people-oriented, meticulous manufacturing, brainstorm, construct brilliant" organization. hilosophy. Strict top quality management, fantastic service, reasonable cost in Myanmar is our stand on the premise of competition. If vital, welcome to make contact with us by our web page or telephone consultation, we're likely to be happy to serve you.

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  • SiC Coating graphite MOCVD heater

    SiC Coating graphite MOCVD heater

    VeTeK Semiconductor produces SiC Coating graphite MOCVD heater, which is a key component of the MOCVD process. Based on a high-purity graphite substrate, the surface is coated with a high-purity SiC coating to provide excellent high-temperature stability and corrosion resistance. With high quality and highly customized product services, VeTeK Semiconductor's SiC Coating graphite MOCVD heater is an ideal choice to ensure MOCVD process stability and thin film deposition quality. VeTeK Semiconductor looks forward to becoming your partner.
  • Fine Grain High Purity Isotropic Graphite

    Fine Grain High Purity Isotropic Graphite

    Fine Grain High Purity Isotropic Graphite is a necessary material for high-end applications such as semiconductors and photovoltaics, and has broad market prospects. With technological advances, VeTek Semiconductor has the manufacturing and supply capabilities for large quantities of Fine Grain High Purity Isotropic Graphite. We welcome your inquiries at any time.
  • TaC Coated Deep UV LED Susceptor

    TaC Coated Deep UV LED Susceptor

    TaC coating is a new generation coating develop for harsh environment.VeTek Semiconductor is an integrated supplier engaged in research and development, production, design, and sales of TaC coatings. We specialize in manufacturing edge-cutting TaC Coated UV LED Susceptors, which are crucial components in the LED epitaxy process. Our TaC Coated Deep UV LED Susceptor offer high thermal conductivity, high mechanical strength, improved production efficiency, and epitaxial wafer protection. Welcome to inquiry us.
  • Three-petal Graphite Crucible

    Three-petal Graphite Crucible

    VeTek Semiconductor's Three-petal Graphite Crucible is made of high purity graphite material processed by surface pyrolytic carbon coating, which is used to pull single crystal thermal field. Compared with traditional crucible, the structure of three-lobe design is more convenient to install and disassemble, improve work efficiency, and the impurities below 5ppm can meet the application of semiconductor and photovoltaic industry.
  • Tantalum Carbide Coated Tube for Crystal Growth

    Tantalum Carbide Coated Tube for Crystal Growth

    Tantalum Carbide Coated Tube for Crystal Growth is mainly used in SiC crystal growth process. VeTek Semiconductor has been supplying Tantalum Carbide Coated Tube for Crystal Growth for many years and has been working in the field of TaC coating for many years. Our products have a high purity and high temperature resistance. We look forward to becoming your long-term partner in China. Feel free to inquire us.
  • CVD SiC Coating Wafer Epi Susceptor

    CVD SiC Coating Wafer Epi Susceptor

    VeTek Semiconductor CVD SiC coating wafer Epi susceptor is an indispensable component for SiC epitaxy growth, offering superior thermal management, chemical resistance, and dimensional stability. By choosing VeTek Semiconductor's CVD SiC coating wafer Epi susceptor, you enhance the performance of your MOCVD processes, leading to higher quality products and greater efficiency in your semiconductor manufacturing operations. Welcome your further inquiries.

  • ALD Atomic Layer Deposition Recipe

    Spatial ALD, spatially isolated atomic layer deposition. The wafer moves between different positions and is exposed to different precursors at each position. The figure below is a comparison between traditional ALD and spatially isolated ALD.

  • What is an EPI Epitaxial Furnace? - VeTek Semiconductor

    The working principle of the epitaxial furnace is to deposit semiconductor materials on a substrate under high temperature and high pressure. Silicon epitaxial growth is to grow a layer of crystal with the same crystal orientation as the substrate and different thickness on a silicon single crystal substrate with a certain crystal orientation. This article mainly introduces the silicon epitaxial growth methods: vapor phase epitaxy and liquid phase epitaxy.

  • How does TaC coating improve the service life of graphite components? - VeTek Semiconductor

    Tantalum carbide (TaC) coating can significantly extend the life of graphite parts by improving high temperature resistance, corrosion resistance, mechanical properties and thermal management capabilities. Its high purity characteristics reduce impurity contamination, improve crystal growth quality, and enhance energy efficiency. It is suitable for semiconductor manufacturing and crystal growth applications in high-temperature, highly corrosive environments.

  • Thermal Field Design for SiC Single Crystal Growth

    With the growing demand for SiC materials in power electronics, optoelectronics and other fields, the development of SiC single crystal growth technology will become a key area of ​​scientific and technological innovation. As the core of SiC single crystal growth equipment, thermal field design will continue to receive extensive attention and in-depth research.

  • Why is tantalum carbide (TaC) coating superior to silicon carbide (SiC) coating in SiC single crystal growth? - VeTek semiconductor

    From the application perspective of SiC single crystal growth, this article compares the basic physical parameters of TaC coating and SIC coating, and explains the basic advantages of TaC coating over SiC coating in terms of high temperature resistance, strong chemical stability, reduced impurities, and lower costs.

  • Silicon carbide nanomaterials

    Silicon carbide nanomaterials (SiC) are materials with at least one dimension at the nanometer scale (1-100nm). These materials can be zero-, one-, two-, or three-dimensional and have diverse applications.

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