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China MOCVD epitaxial growth Manufacturer, Supplier, Factory

The client satisfaction is our primary concentrate on. We uphold a consistent level of professionalism, top quality, credibility and service for MOCVD epitaxial growth, SiC Coated Pedestal, SiC Coated Substrate, CVD SiC coating, Graphite tray, To significantly improve our assistance quality, our company imports a large number of international advanced devices. Welcome clients from your home and abroad to simply call and inquire!
MOCVD epitaxial growth, Our organization. Situated inside the national civilized cities, the visitors is very easy, unique geographical and economic situations. We pursue a "people-oriented, meticulous manufacturing, brainstorm, construct brilliant" organization. hilosophy. Strict top quality management, fantastic service, reasonable cost in Myanmar is our stand on the premise of competition. If vital, welcome to make contact with us by our web page or telephone consultation, we're likely to be happy to serve you.

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  • Aixtron G10 Solid SiC planetary reactor components

    Aixtron G10 Solid SiC planetary reactor components

    VeTek Semiconductor’s Solid SiC accessories for the Aixtron G10-SiC platform are high-purity, fully dense silicon carbide components designed for the demanding thermal and chemical environment of SiC epitaxial growth. These parts deliver outstanding high-temperature stability, chemical resistance, and ultra-low particle generation, supporting the high-throughput 9×150 mm / 6×200 mm planetary reactor configuration used in power device manufacturing.
  • Solid SiC Etching Focusing Ring

    Solid SiC Etching Focusing Ring

    Solid SiC Etching Focusing Ring is one of the core components of wafer etching process, which plays a role in fixing wafer, focusing plasma and improving wafer etching uniformity. As the leading SiC Focusing Ring manufacturer in China, VeTek Semiconductor has advanced technology and mature process, and manufactures Solid SiC Etching Focusing Ring that fully meets the needs of end customers according to customer requirements. We look forward to your inquiry and becoming each other's long-term partners.
  • Silicon Carbide Shower Head

    Silicon Carbide Shower Head

    Silicon Carbide Shower Head has excellent high temperature tolerance, chemical stability, thermal conductivity and good gas distribution performance, which can achieve uniform gas distribution and improve film quality. Therefore, it is usually used in high temperature processes such as chemical vapor deposition (CVD) or physical vapor deposition (PVD) processes. Welcome your further consultation to us ,vetek semiconductor.
  • CVD SiC Coated Ceiling

    CVD SiC Coated Ceiling

    VeTek Semiconductor's CVD SiC coated ceiling has excellent properties such as high temperature resistance, corrosion resistance, high hardness, and low thermal expansion coefficient, making it an ideal material choice in semiconductor manufacturing. As a China leading CVD SiC coated ceiling manufacturer and supplier, VeTek semiconductor looks forward to your consultation.
  • Porous SiC Ceramic Chuck

    Porous SiC Ceramic Chuck

    Vetek Semiconductor offers Porous SiC Ceramic Chuck widely used in wafer processing technology, transfer and other links, suitable for bonding, scribing, patch, polishing and other links, laser processing. Our Porous SiC Ceramic Chuck has Ultra-strong vacuum adsorption, high flatness and high purity meet the needs of most semiconductor industries.Welcome to inquiry us.
  • Silicon Cassette Boat

    Silicon Cassette Boat

    The Silicon Cassette Boat from Veteksemicon is a precision-engineered wafer carrier developed specifically for high-temperature semiconductor furnace applications, including oxidation, diffusion, drive-in, and annealing. Fabricated from ultra-high-purity silicon and finished to advanced contamination-control standards, it provides a thermally stable, chemically inert platform that closely matches the properties of silicon wafers themselves. This alignment minimizes thermal stress, reduces slip and defect formation, and ensures exceptionally uniform heat distribution throughout the batch

  • SiC-Coated Graphite Susceptor: How It Affects Epitaxy Uniformity and Wafer Quality？

    A SiC-coated graphite susceptor is a critical thermal-field component in semiconductor epitaxy rather than simply a wafer holder. This technical article explains how susceptor geometry, flatness, pocket design, graphite properties and CVD SiC coating quality work together to influence wafer thermal boundaries, temperature distribution and epitaxial uniformity. It also examines common susceptor failure modes, coating degradation, particle risks and the key engineering parameters required when specifying a custom or replacement epitaxy susceptor.

  • Substrate vs. Epitaxy: Key Roles in Semiconductor Manufacturing

    In modern chip manufacturing, the substrate provides physical support and a heat dissipation path, while the epitaxial layer determines the electrical performance limits of the device. This article provides an in-depth analysis of the fundamental differences between single-crystal silicon and silicon carbide substrates and CVD/MBE epitaxial processes, and reveals how epitaxial technology enhances the performance of high-frequency and high-voltage devices by reducing defect density and incorporating strain engineering. Whether you are a process engineer or a procurement decision-maker, this guide will help you quickly identify the most suitable wafer selection strategy.

  • Semiconductor substrate wafer: Material properties of silicon, GaAs, SiC and GaN

    The article analyzes the material properties of semiconductor substrate wafers such as silicon, GaAs, SiC and GaN

  • Uses of solid silicon carbide

    Solid silicon carbide (SiC) has become one of the key materials in semiconductor manufacturing due to its unique physical properties. The following is an analysis of its advantages and practical value based on its physical properties and its specific applications in semiconductor equipment (such as wafer carriers, shower heads, etching focus rings, etc.).

  • A complete explanation of the chip manufacturing process (2/2): from wafer to packaging and testing

    Thin film deposition is vital in chip manufacturing, creating micro devices by depositing films under 1 micron thick via CVD, ALD, or PVD. These processes build semiconductor components through alternating conductive and insulating films.

  • Application of TaC-Coated Graphite Parts in Single Crystal Furnaces

    In the growth of SiC and AlN single crystals using the physical vapor transport (PVT) method, crucial components such as the crucible, seed holder, and guide ring play a vital role. As depicted in Figure 2 [1], during the PVT process, the seed crystal is positioned in the lower temperature region, while the SiC raw material is exposed to higher temperatures (above 2400 ℃).

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