Aluminum Nitride (AlN) Wafers

1. Key Features & Advantages

• Ultra-wide bandgap ≈ 6.2 eV — highest among mainstream semiconductor materials

• High thermal conductivity ≈ 320 W/m·K for efficient heat dissipation

• Excellent electrical insulation (>10¹³ Ω·cm) and high breakdown field (12–15 MV/cm)

• Good lattice and thermal-expansion match with GaN — ideal for GaN-on-AlN heterostructures

• Low dislocation density options with tight HR-XRD rocking-curve control

• Al-face CMP (Ra ≤ 0.5 nm) and N-face MP for epi-ready surfaces

• Multiple sizes and quality grades (P / R / D) to match production and research requirements

2. Typical Applications

• High-power RF devices for radar and 6G communications

• High-voltage power electronics for grid, data centers, and electric vehicles

• Deep-ultraviolet (UVC) LEDs and laser diodes

• GaN-on-AlN epitaxial growth and advanced heterostructure devices

• High-temperature, high-frequency, and harsh-environment semiconductor components

3. Available Sizes & Quality Grades

VeTek offers AlN wafers in the following standard formats. Custom sizes and specifications can be discussed upon request.

• 10 × 10 mm square substrates

• 1-inch (25.4 mm) wafers

• 2-inch (50.8 mm) wafers

Quality grades: P-grade (Product), R-grade (Research), D-grade (Experimental), differentiated mainly by HR-XRD rocking-curve FWHM and overall crystal quality.

4. Key Technical Specifications

Common parameters across sizes (typical values; grade-dependent where noted):

Size-specific geometric tolerances:

• 10×10 mm: Side length 10 mm ± 0.5 mm; TTV ≤ 15 μm; Bow ≤ 15 μm

• 1-inch: Diameter 25.4 mm ± 0.5 mm; Usable area ≥ 90%; TTV ≤ 20 μm; Bow ≤ 20 μm; Primary flat (10-10) ± 5°, length 8 mm ± 1 mm

• 2-inch: Diameter 50.8 mm ± 0.5 mm; Usable area ≥ 90%; TTV ≤ 30 μm; Bow ≤ 30 μm; Primary flat length 16 mm ± 2 mm

5. Why Choose VeTek AlN Wafers?

As a specialized supplier of advanced semiconductor materials and components, VeTek Semiconductor provides:

• High-quality AlN single-crystal wafers with controlled crystal quality and epi-ready surfaces

• Multiple size and grade options to support both device production and research programs

• Complementary wafer and substrate solutions under the VeTek semiconductor materials portfolio

• Technical support for material selection and process matching

Our AlN wafers help customers accelerate development of high-power RF, high-voltage power, and deep-UV optoelectronic devices that demand the unique combination of ultra-wide bandgap, high thermal conductivity, and GaN compatibility offered by aluminum nitride.