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PZT Piezoelectric Wafers (PZT on Si/SOI)
  • PZT Piezoelectric Wafers (PZT on Si/SOI)PZT Piezoelectric Wafers (PZT on Si/SOI)

PZT Piezoelectric Wafers (PZT on Si/SOI)

As the demand for high-sensitivity and low-power MEMS transducers grows with the expansion of 5G communications, precision medical devices, and smart wearables, our PZT on Si/SOI wafers provide a critical material solution. Utilizing advanced thin-film deposition processes such as Sol-gel or sputtering, we achieve exceptional consistency and superior piezoelectric performance on silicon substrates. These wafers serve as the fundamental core for electromechanical energy conversion.

1. Technical Architecture

Our wafers feature a sophisticated multi-layer stack structure designed to ensure optimal adhesion, conductivity, and piezoelectric response during complex MEMS processing:

 ● Top Electrode (Key Layer): Pt (Platinum).

Piezo Layer (Core Layer): PZT.

Intermediate Layers: Includes Buffer Layer, Bottom Electrode, and Adhesion Layer to optimize grain orientation and structural stability.

Substrate: Compatible with Si or SOI wafers.


PZT Piezoelectric Ceramic Wafers Physical Structure

2. Quality Assurance & Microstructure Analysis

We ensure high reliability through rigorous technical characterization:

Typical Stack of PZT Piezoelectric Ceramic Wafers


 ● SEM Analysis: Scanning Electron Microscopy (SEM) images reveal a dense, crack-free surface morphology with uniform grain size distribution, ideal for high-reliability MEMS applications.

 ● XRD Characterization: X-Ray Diffraction (XRD) patterns confirm pure perovskite phase formation with a strong (100) preferred orientation, ensuring maximal piezoelectric performance coefficients.


3. Technical Specifications (Characteristics)

PZT Characteristics
Polycrystal PZT
Piezoelectric constant d31
200 pC/N
Piezoelectric coefficient e31
-14 C/m²
Curie temperature
X ℃
Wafer Sizes
4 / 6 / 8 inch available


4. Core Applications


 ● Piezoelectric Micromachined Ultrasonic Transducers (pMUT): High-frequency miniaturized arrays for fingerprint sensors, gesture recognition, and automotive ultrasonic radar.

 ● Communication: Key for manufacturing FBAR or SAW filters in 5G/6G to achieve wider bandwidth and lower insertion loss.

 ● Acoustic MEMS: Provides powerful transient response for MEMS speakers and improves the Signal-to-Noise Ratio (SNR) for MEMS microphones.

 ● Precision Fluid Control: High-speed vibration via d31 mode for nanoliter-scale precise control of droplet volume in inkjet printheads.

 ● Medical & Beauty (Micro-pumping): Drives medical nebulizers or cosmetic ultrasonic pumps with high reliability and compact size.


5. Customization Services

In addition to standard deposition on Si wafers, we also provide custom deposition services:

 ● Film & Thickness Customization: Deposition of specific film types and custom thicknesses according to design requirements.

 ● OEM Foundry: Acceptance of wafers supplied from customers for high-quality piezoelectric thin-film growth.

 ● SOI Substrate Support: Specialized deposition on SOI wafers with the following specifications:


SOI substrate wafer
Size
Top Si resistance
thickness
dopant
Box layer
6-inch, 8-inch
> 5000 ohm/cm




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