China SiC Coated Substrate Manufacturer, Supplier, Factory

VeTek Semiconductor's TaC Coated Deflector Ring is a highly specialized component designed for SiC crystal growth processes. The TaC coating provides excellent high temperature resistance and chemical inertness to cope with the high temperatures and corrosive environments during crystal growth process. This ensures stable performance and long life of the component, reducing the frequency of replacement and downtime. We are committed to providing quality products at competitive prices and look forward to being your long-term partner in China.Welcome to consult at any time.

Vtech Semiconductor is committed to the development and commercialization of CVD SiC coated parts for Aixtron reactors. As an example, our SiC Coating Cover Segments have been carefully processed to produce a dense CVD SiC coating with excellent corrosion resistance, chemical stability, welcome to discuss application scenarios with us.

VeTeK Semiconductor produces SiC Coating graphite MOCVD heater, which is a key component of the MOCVD process. Based on a high-purity graphite substrate, the surface is coated with a high-purity SiC coating to provide excellent high-temperature stability and corrosion resistance. With high quality and highly customized product services, VeTeK Semiconductor's SiC Coating graphite MOCVD heater is an ideal choice to ensure MOCVD process stability and thin film deposition quality. VeTeK Semiconductor looks forward to becoming your partner.

VeTek Semiconductor’s Aixtron Satellite Wafer Carrier is a wafer carrier used in AIXTRON equipment, mainly used in MOCVD processes, and is particularly suitable for high-temperature and high-precision semiconductor processing processes. The carrier can provide stable wafer support and uniform film deposition during MOCVD epitaxial growth, which is essential for the layer deposition process. Welcome your further consultation.

Veteksemicon’s CVD SiC coated wafer susceptor is a cutting-edge solution for semiconductor epitaxial processes, offering ultra-high purity (≤100ppb, ICP-E10 certified) and exceptional thermal/chemical stability for contamination-resistant growth of GaN, SiC, and silicon-based epi-layers. Engineered with precision CVD technology, it supports 6”/8”/12” wafers, ensures minimal thermal stress, and withstands extreme temperatures up to 1600°C.

VeTek Semiconductor has been deeply engaged in SiC coating products for many years and has become a leading manufacturer and supplier of SiC Coated Top Plate for LPE PE2061S in China. The SiC Coated Top Plate for LPE PE2061S we provide is designed for LPE silicon epitaxial reactors and is located on the top together with the barrel base. This SiC Coated Top Plate for LPE PE2061S has excellent characteristics such as high purity, excellent thermal stability and uniformity, which helps to grow high-quality epitaxial layers. No matter what product you need, we look forward to your inquiry.