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In PECVD production, many coating and deposition problems do not start with plasma power or gas chemistry. They start with the carrier that holds the wafers.

​In the silicon carbide (SiC) PVT crystal growth process, the stability and uniformity of the thermal field directly determine the crystal growth rate, defect density, and material uniformity. As the system boundary, thermal-field components exhibit surface thermophysical properties whose slight fluctuations are dramatically amplified under high-temperature conditions, ultimately leading to instability at the growth interface.

This article mainly describes the broad application prospects of silicon carbide ceramics. It also focuses on the analysis of the causes of sintering cracks in silicon carbide ceramics and the corresponding solutions.

High-purity materials are essential for semiconductor manufacturing. These processes involve extreme heat and corrosive chemicals. CVD-SiC (Chemical Vapor Deposition Silicon Carbide) provides the necessary stability and strength. It is now a primary choice for advanced equipment parts due to its high purity and density.

High-purity quartz materials play a vital role in the semiconductor industry. Their superior high-temperature resistance, corrosion resistance, thermal stability, and light transmission properties make them critical consumables. Quartz products are used for components in both high-temperature and low-temperature zones of wafer production, ensuring the stability and cleanliness of the manufacturing process.

With the development of the solar photovoltaic industry, diffusion furnaces and LPCVD furnaces are the main equipment for the production of solar cells, which directly affect the efficient performance of solar cells. Based on the comprehensive product performance and usage cost, silicon carbide ceramic materials have more advantages in the field of solar cells than quartz materials. The application of silicon carbide ceramic materials in the photovoltaic industry can greatly help photovoltaic enterprises reduce auxiliary material investment costs, improve product quality and competitiveness. The future trend of silicon carbide ceramic materials in the photovoltaic field is mainly towards higher purity, stronger load-bearing capacity, higher loading capacity, and lower cost.