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  • CVD TaC Coating Ring

    CVD TaC Coating Ring

    In semiconductor industry, CVD TaC Coating Ring is a highly advantageous component designed to meet the demanding requirements of silicon carbide (SiC) crystal growth processes. Vetek semiconductor's CVD TaC Coating Ring provides outstanding high-temperature resistance and chemical inertness, making it an ideal choice for environments characterized by elevated temperatures and corrosive conditions.We are committed to creating efficient production of silicon carbide single crystal accessories. Pls feel free to contact us for more questions.
  • Pre-Heat Ring

    Pre-Heat Ring

    Pre-heat ring is used in the semiconductor epitaxy process to preheat wafers and make the temperature of wafers more stable and uniform, which is of great significance for the high-quality growth of epitaxy layers. Vetek Semiconductor strictly controls the purity of this product to prevent volatilization of impurities at high temperatures.Welcome to have a further discussion with us.
  • Semiconductor Quartz tank

    Semiconductor Quartz tank

    VeTek semiconductor is a leading semiconductor quartz tank manufacturer and factory in China. In fact, quartz tank is particularly important in the wet processing used in wafer manufacturing. Welcome your further inquiries.
  • SiC Coated Pancake Susceptor for LPE PE3061S 6'' Wafers

    SiC Coated Pancake Susceptor for LPE PE3061S 6'' Wafers

    SiC Coated Pancake Susceptor for LPE PE3061S 6'' wafers is one of the core components used in 6'' wafers epitaxial wafer processing. VeTek Semiconductor is currently a leading manufacturer and supplier of SiC Coated Pancake Susceptor for LPE PE3061S 6'' wafers in China. The SiC Coated Pancake Susceptor it provides has excellent characteristics such as high corrosion resistance, good thermal conductivity, and good uniformity. Looking forward to your inquiry.
  • CVD SiC coating graphite susceptor

    CVD SiC coating graphite susceptor

    VeTek Semiconductor CVD SiC coating graphite susceptor is one of the important components in the semiconductor industry such as epitaxial growth and wafer processing. It is used in MOCVD and other equipment to support the processing and handling of wafers and other high-precision materials. VeTek Semiconductor has China's leading SiC coated graphite susceptor and TaC Coated Graphite Susceptor production and manufacturing capabilities, and looks forward to your consultation.
  • Semiconductor Ceramic Nozzle

    Semiconductor Ceramic Nozzle

    Semiconductor ceramic nozzle from VeTeK Semiconductor are carefully manufactured with excellent uniformity and precision. As a professional Semiconductor ceramic nozzle manufacturer and supplier, VeTeKSemi is always committed to providing the highest quality Ceramic Nozzle products at competitive prices. Welcome your further consultation.

  • What are silicon carbide ceramics?

    In semiconductor manufacturing, various types of semiconductor ceramic components products are needed. These products are used in different production scenarios due to their different characteristics, so as to play their corresponding functions. They are indispensable products in the semiconductor processing industry.

  • How thin can the Taiko process make silicon wafers?

    The Taiko process thins silicon wafers using its principles, technical advantages and process origins.

  • The Development History of 3C SiC

    Through continuous technological progress and in-depth mechanism research, 3C-SiC heteroepitaxial technology is expected to play a more important role in the semiconductor industry and promote the development of high-efficiency electronic devices.

  • Different technical routes of SiC epitaxial growth furnace

    Silicon carbide substrates have many defects and cannot be processed directly. A specific single crystal thin film needs to be grown on them through an epitaxial process to make chip wafers. This thin film is the epitaxial layer. Almost all silicon carbide devices are realized on epitaxial materials. High-quality silicon carbide homogeneous epitaxial materials are the basis for the development of silicon carbide devices. The performance of epitaxial materials directly determines the realization of the performance of silicon carbide devices.

  • GaN-based low-temperature epitaxy technology

    This article mainly describes GaN-based low-temperature epitaxial technology, including the crystal structure of GaN-based materials, 3. epitaxial technology requirements and implementation solutions, the advantages of low-temperature epitaxial technology based on PVD principles, and the development prospects of low-temperature epitaxial technology.

  • Porous Tantalum Carbide: A new generation of materials for SiC crystal growth

    VeTek Semiconductor's Porous Tantalum Carbide, as a new generation of SiC crystal growth material, has many excellent product properties and plays a key role in a variety of semiconductor processing technologies.

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