Web Menu

Product Search

Language

Products

China MOCVD Technology Manufacturer, Supplier, Factory

Gaining client pleasure is our company's aim without end. We are going to make excellent efforts to create new and top-quality goods, meet your special requirements and provide you with pre-sale, on-sale and after-sale companies for MOCVD Technology, CVD SiC coating manufacturer, CVD TaC coating, SiC Coating Susceptor, High purity graphite, We welcome new and old consumers from all walks of everyday living to speak to us for upcoming business enterprise interactions and mutual accomplishment.
MOCVD Technology, We have been consistently broadening the market within Romania in addition to preparation punching in extra premium quality merchandise connected with printer on t shirt so that you can Romania. Most people firmly believe we have the whole capacity to provide you happy solutions.

Related Products

Hot Products

  • SiC Coated ICP Etching Carrier

    SiC Coated ICP Etching Carrier

    Veteksemicon SiC Coated ICP Etching Carrier is designed for the most demanding epitaxy equipment applications. Made of high-quality ultra-pure graphite material, our SiC Coated ICP Etching Carrier has a highly flat surface and excellent corrosion resistance to withstand the harsh conditions during handling. The high thermal conductivity of the SiC coated carrier ensures even heat distribution for excellent etching results.
  • High purity CVD SiC raw material

    High purity CVD SiC raw material

    High purity CVD SiC raw material prepared by CVD is the best source material for silicon carbide crystal growth by physical vapor transport. The density of High purity CVD SiC raw material supplied by VeTek Semiconductor is higher than that of small particles formed by spontaneous combustion of Si and C-containing gases, and it does not require a dedicated sintering furnace and has a nearly constant evaporation rate. It can grow extremely high quality SiC single crystals. Looking forward to your inquiry.
  • SiC Coated Top Plate for LPE PE2061S

    SiC Coated Top Plate for LPE PE2061S

    VeTek Semiconductor has been deeply engaged in SiC coating products for many years and has become a leading manufacturer and supplier of SiC Coated Top Plate for LPE PE2061S in China. The SiC Coated Top Plate for LPE PE2061S we provide is designed for LPE silicon epitaxial reactors and is located on the top together with the barrel base. This SiC Coated Top Plate for LPE PE2061S has excellent characteristics such as high purity, excellent thermal stability and uniformity, which helps to grow high-quality epitaxial layers. No matter what product you need, we look forward to your inquiry.
  • High purity graphite power

    High purity graphite power

    Vetek Semiconductor offers High purity graphite power that is a high quality product with a purity of up to 5ppm and meets the highest industry standards. Customizable particle form, mainly used for silicon carbide powder and diamond synthesis, suitable for semiconductor, electronics and high-tech industries. Welcome to inquiry us!
  • Porous SiC Ceramic Plate

    Porous SiC Ceramic Plate

    Our porous SiC ceramic plates are porous ceramic materials made of silicon carbide as the main component and processed by special processes. They are indispensable materials in semiconductor manufacturing, chemical vapor deposition (CVD) and other processes.
  • GaN Epitaxial Graphite Susceptor for G5

    GaN Epitaxial Graphite Susceptor for G5

    VeTek Semiconductor is a professional manufacturer and supplier, dedicated to providing high-quality GaN Epitaxial Graphite susceptor For G5. we have established long-term and stable partnerships with numerous well-known companies at home and abroad, earning the trust and respect of our customers.

  • Quartz devices in solar cell manufacturing

    Quartz devices play a critical role in solar cell manufacturing, offering exceptional thermal resistance, chemical purity, and structural stability required in high-temperature processes. From quartz diffusion tubes and crucibles to quartz boats and furnace components, these high-purity materials are essential for achieving optimal efficiency in diffusion, CVD, and wet etching steps.

  • What is hot pressed SiC ceramics?

    Hot pressing sintering is the main method for preparing high-performance SiC ceramics. The process of hot pressing sintering includes: selecting high-purity SiC powder, pressing and molding under high temperature and high pressure, and then sintering. SiC ceramics prepared by this method have the advantages of high purity and high density, and are widely used in grinding discs and heat treatment equipment for wafer processing.

  • Porous Silicon Carbide (SiC) Ceramic Plates: High-Performance Materials in Semiconductor Manufacturing

    Porous SiC Ceramic Plate is one of the core materials in the field of semiconductor manufacturing. With its unique structure and excellent physical properties, Porous SiC Ceramic Disc has become an irreplaceable key component in high temperature and corrosive environments. In this article, we will deeply analyze its physical properties, application scenarios and selection advantages.

  • Thermal Field Design for SiC Single Crystal Growth

    With the growing demand for SiC materials in power electronics, optoelectronics and other fields, the development of SiC single crystal growth technology will become a key area of ​​scientific and technological innovation. As the core of SiC single crystal growth equipment, thermal field design will continue to receive extensive attention and in-depth research.

  • Semiconductor substrate wafer: Material properties of silicon, GaAs, SiC and GaN

    The article analyzes the material properties of semiconductor substrate wafers such as silicon, GaAs, SiC and GaN

  • What is the difference between silicon carbide (SiC) and gallium nitride (GaN) applications? - VeTek Semiconductor

    SiC and GaN are wide bandgap semiconductors with advantages over silicon, such as higher breakdown voltages, faster switching speeds, and superior efficiency. SiC is better for high-voltage, high-power applications due to its higher thermal conductivity, while GaN excels in high-frequency applications thanks to its superior electron mobility.

Send Inquiry

X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept