SiC Coated Graphite Susceptor for MOCVD

VeTek Semiconductor’s SiC Coated Graphite Susceptor for MOCVD is a high-purity SiC coated graphite carrier, specifically designed for epitaxial layer growth on wafer chips. As a central component in MOCVD processing, typically shaped as a gear or ring, it boasts exceptional heat resistance and corrosion resistance, ensuring stability in extreme environments.

Key Features of the MOCVD SiC Coated Graphite Susceptor:

●   Flake-Resistant Coating: Ensures uniform SiC coating coverage on all surfaces, reducing the risk of particle detachment

●   Excellent High-Temperature Oxidation Resistance: Remains stable at temperatures up to 1600°C

●   High Purity: Manufactured through CVD chemical vapor deposition, suitable for high-temperature chlorination conditions

●   Superior Corrosion Resistance: Highly resistant to acids, alkalis, salts, and organic reagents

●   Optimized Laminar Airflow Pattern: Enhances the uniformity of airflow dynamics

●   Uniform Thermal Distribution: Ensures stable heat distribution during high-temperature processes

●   Contamination Prevention: Prevents diffusion of contaminants or impurities, ensuring wafer cleanliness

At VeTek Semiconductor, we adhere to strict quality standards, delivering reliable products and services to our clients. We select only premium materials, striving to meet and exceed industry performance requirements. Our SiC Coated Graphite Susceptor for MOCVD exemplifies this commitment to quality. Contact us to learn more about how we can support your semiconductor wafer processing needs.

CVD SIC FILM CRYSTAL STRUCTURE:

Basic physical properties of CVD SiC coating:

VeTek Semiconductor MOCVD SiC Coated Graphite Susceptor: