Web Menu

Product Search

Language

Products

China MOCVD Reactor Susceptors Manufacturer, Supplier, Factory

The corporation upholds the philosophy of ""Be No.1 in excellent, be rooted on credit rating and trustworthiness for growth"", will proceed to provide aged and new buyers from home and abroad whole-heatedly for MOCVD Reactor Susceptors, SiC Coated Graphite Susceptor for MOCVD, MOCVD SiC Coated Graphite Susceptor, Veeco MOCVD Susceptor, SiC-Coated MOCVD Reactor Part, Warmly welcome to cooperate and develop with us! we will continue to provide product with high quality and competitive price.
MOCVD Reactor Susceptors, Strong infrastructure is the require of any organization. We have been backed with a robust infrastructural facility that enables us to manufacture, store, quality check and dispatch our merchandise worldwide. To maintain smooth work flow, we have now sectioned our infrastructure into a number of departments. All these departments are functional with latest tools, modernized machines and equipment. Owing to which, we're able to accomplish voluminous production without compromising upon the quality.

Related Products

Hot Products

  • CVD SiC Block for SiC Crystal Growth

    CVD SiC Block for SiC Crystal Growth

    CVD SiC Block for SiC Crystal Growth, is a new high purity raw material developed by Vetek Semiconductor. It has a high input-output ratio and can grow high-quality, large-size silicon carbide single crystals, which is a second-generation material to replace the powder used in the market today. Welcome to discuss technical issues.
  • TaC Coated Graphite Wafer Carrier

    TaC Coated Graphite Wafer Carrier

    VeTek Semiconductor has carefully designed TaC Coated Graphite Wafer Carrier for customers. It is composed of high-purity graphite and TaC coating, which is suitable for various wafer epitaxial wafer processing. We have been specialized in SiC and TaC coating for many years. Compared with SiC coating, Our TaC coated graphite wafer carrier has a higher temperature resistance and wear-resistant. We look forward to becoming your long-term partner in China.
  • MOCVD Susceptor with TaC Coating

    MOCVD Susceptor with TaC Coating

    VeTek Semiconductor is a comprehensive supplier involved in the research, development, production, design, and sales of TaC coatings and SiC coating parts. Our expertise lies in the production of state-of-the-art MOCVD Susceptor with TaC Coating, which play a vital role in the LED epitaxy process. We welcome you to discuss with us inquiries and further information.
  • Tantalum Carbide Coating Cover

    Tantalum Carbide Coating Cover

    Tantalum Carbide Coating Cover is composed of high-purity graphite and TaC coating. VeTek Semiconductor is a leading supplier and manufacturer of Tantalum Carbide Coating Cover in China. We focus on providing high-purity, high-temperature resistant tantalum carbide products. Our tantalum carbide coated cover have excellent performance and reliability, and can effectively protect materials in extremely high temperature and corrosive environments. We look forward to becoming your long-term partner in China. Welcome to consult at any time.
  • CVD SiC coated wafer susceptor

    CVD SiC coated wafer susceptor

    Veteksemicon’s CVD SiC coated wafer susceptor is a cutting-edge solution for semiconductor epitaxial processes, offering ultra-high purity (≤100ppb, ICP-E10 certified) and exceptional thermal/chemical stability for contamination-resistant growth of GaN, SiC, and silicon-based epi-layers. Engineered with precision CVD technology, it supports 6”/8”/12” wafers, ensures minimal thermal stress, and withstands extreme temperatures up to 1600°C.
  • CVD SiC Graphite Cylinder

    CVD SiC Graphite Cylinder

    Vetek Semiconductor’s CVD SiC Graphite Cylinder is pivotal in semiconductor equipment, serving as a protective shield within reactors to safeguard internal components in high temperature and pressure settings. It effectively shields against chemicals and extreme heat, preserving equipment integrity. With exceptional wear and corrosion resistance, it ensures longevity and stability in challenging environments. Utilizing these covers enhances semiconductor device performance, prolongs lifespan, and mitigates maintenance requirements and damage risks.Welcome to inquiry us.

  • ALD Atomic Layer Deposition Recipe

    Spatial ALD, spatially isolated atomic layer deposition. The wafer moves between different positions and is exposed to different precursors at each position. The figure below is a comparison between traditional ALD and spatially isolated ALD.

  • What is tantalum carbide(TaC)？

    Tantalum Carbide (TaC) is a high-performance ceramic material known for its extremely high hardness, high melting point and excellent chemical stability. It is widely used in semiconductor, aerospace and other industries requiring extreme heat, wear and corrosion resistance. This article will analyze in detail the structure, physical properties, and specific uses of the finished product in semiconductor manufacturing.

  • Semiconductor substrate wafer: Material properties of silicon, GaAs, SiC and GaN

    The article analyzes the material properties of semiconductor substrate wafers such as silicon, GaAs, SiC and GaN

  • What is TaC Coating ? - VeTek Semiconductor

    This article mainly introduces the product types, product characteristics and main functions of TaC Coating in semiconductor processing, and makes a comprehensive analysis and interpretation of TaC Coating products as a whole.

  • Application of TaC-Coated Graphite Parts in Single Crystal Furnaces

    In the growth of SiC and AlN single crystals using the physical vapor transport (PVT) method, crucial components such as the crucible, seed holder, and guide ring play a vital role. As depicted in Figure 2 [1], during the PVT process, the seed crystal is positioned in the lower temperature region, while the SiC raw material is exposed to higher temperatures (above 2400 ℃).

  • Why Silicon carbide(SiC) PVT Crystal Growth Cannot Do Without Tantalum Carbide Coatings(TaC)?

    In the process of growing silicon carbide (SiC) crystals via the Physical Vapor Transport (PVT) method, the extreme high temperature of 2000–2500 °C is a “double-edged sword” — while it drives the sublimation and transport of source materials, it also dramatically intensifies impurity release from all materials within the thermal field system, especially trace metallic elements contained in conventional graphite hot-zone components. Once these impurities enter the growth interface, they will directly damage the core quality of the crystal. This is the fundamental reason why tantalum carbide (TaC) coatings have become a “mandatory option” rather than an “optional choice” for PVT crystal growth.

Send Inquiry

X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies.Privacy Policy
RejectAccept