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China MOCVD epitaxial wafer susceptor Manufacturer, Supplier, Factory

We rely upon strategic thinking, constant modernisation in all segments, technological advances and of course upon our employees that directly participate inside our success for MOCVD epitaxial wafer susceptor, MOCVD Susceptor for Epitaxial Growth, SiC Wafer Susceptor for MOCVD, SiC coating, Silicon Carbide Coating, By more than 8 years of company, now we have accumulated rich experience and advanced technologies from the generation of our merchandise.
MOCVD epitaxial wafer susceptor, Our company is working by the operation principle of "integrity-based, cooperation created, people oriented, win-win cooperation". We hope we can have a friendly relationship with businessman from all over the world.

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    VeTek Semiconductor's LED Epitaxy susceptor is designed for blue and green LED epitaxial manufacturing. It combines silicon carbide coating and SGL graphite, and has high hardness, low roughness, good thermal stability and excellent chemical stability. LED Epitaxy susceptor is one of VeTek Semiconductor's most outstanding products. We look forward to your inquiry.
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    As a professional TaC Coating Crucible Supplier and Manufacturer in China, VeTek Semiconductor's TaC Coating Crucible plays an irreplaceable role in the Single crystal growth process of semiconductors with its excellent thermal conductivity, outstanding chemical stability and enhanced corrosion resistance. Welcome your further inquiries.
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    VeTek Semiconductor is a leading supplier of customized Upper Halfmoon Part SiC coated in China, specializing in advanced materials for over 20 years. VeTek Semiconductor Upper Halfmoon Part SiC coated is specifically designed for SiC epitaxial equipment, serving as a crucial component in the reaction chamber. Made from ultra-pure, semiconductor-grade graphite, it ensures excellent performance. We invite you to visit our factory in China.Welcome to consult at any time.
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    VeTek Semiconductor has been engaged in the semiconductor epitaxial growth industry for a long time and has rich experience and process skills in MOCVD epitaxial wafer susceptor products. Today, VeTek Semiconductor has become China's leading MOCVD epitaxial wafer susceptor manufacturer and supplier, and the wafer susceptors it provides have played an important role in the manufacturing of GaN epitaxial wafers and other products.
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    The barrel type epitaxial wafer heating base is a product with complicated processing technology, which is very challenging to machining equipment and ability. Vetek semiconductor has advanced equipment and rich experience in processing SiC coated graphite barrel susceptor for EPI, can provide the same as the original factory life, more cost-effective epitaxial barrels.If you are interested in our datas,pls no hesitate to contact us.
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  • ALD Atomic Layer Deposition Recipe

    Spatial ALD, spatially isolated atomic layer deposition. The wafer moves between different positions and is exposed to different precursors at each position. The figure below is a comparison between traditional ALD and spatially isolated ALD.

  • What is the difference between epitaxy and ALD?

    The main difference between epitaxy and atomic layer deposition (ALD) lies in their film growth mechanisms and operating conditions. Epitaxy refers to the process of growing a crystalline thin film on a crystalline substrate with a specific orientation relationship, maintaining the same or similar crystal structure. In contrast, ALD is a deposition technique that involves exposing a substrate to different chemical precursors in sequence to form a thin film one atomic layer at a time.

  • Semiconductor process: Chemical Vapor Deposition (CVD)

    Chemical vapor deposition (CVD) in semiconductor manufacturing is used to deposit thin film materials in the chamber, including SiO2, SiN, etc., and commonly used types include PECVD and LPCVD. By adjusting the temperature, pressure and reaction gas type, CVD achieves high purity, uniformity and good film coverage to meet different process requirements.

  • What is Silicon Carbide Ceramic?

    Silicon carbide ceramics, commonly known as SiC ceramics, are a versatile material with unique properties and a wide range of applications in various industries. The following is a detailed discussion of its material composition, physical properties, specific applications and advantages in semiconductor coating processes, and common problems encountered during processing.

  • Application of carbon-based thermal field materials in silicon carbide crystal growth

    Silicon carbide (SiC)'s Key growth methods include PVT, TSSG, and HTCVD, each with distinct advantages and challenges. Carbon-based thermal field materials like insulation systems, crucibles, TaC coatings, and porous graphite enhance crystal growth by providing stability, thermal conductivity, and purity, essential for SiC's precise fabrication and application.

  • What is hot pressed SiC ceramics?

    Hot pressing sintering is the main method for preparing high-performance SiC ceramics. The process of hot pressing sintering includes: selecting high-purity SiC powder, pressing and molding under high temperature and high pressure, and then sintering. SiC ceramics prepared by this method have the advantages of high purity and high density, and are widely used in grinding discs and heat treatment equipment for wafer processing.

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