Products

China Epi Susceptor for MOCVD Manufacturer, Supplier, Factory

It is a great way to further improve our products and repair. Our mission is always to create innovative products to prospects with a superior expertise for Epi Susceptor for MOCVD, LED epitaxy growth process, TaC coating, Tantalum Carbide Coating, UV LED Susceptor Manufacturer, Adhering on the company principle of mutual gains, we have won superior popularity amid our shoppers because of our excellent products and services, excellent products and aggressive selling prices. We warmly welcome shoppers from home and overseas to cooperate with us for common achievements.
Epi Susceptor for MOCVD, With the superior and exceptional service, we've been well developed along with our customers. Expertise and know-how ensure that we are always enjoying the trust from our customers in our business activities. "Quality", "honesty" and "service" is our principle. Our loyalty and commitments remain respectfully at your service. Contact Us Today For further information, contact us now.

Hot Products

  • Aixtron G5+ ceiling component

    Aixtron G5+ ceiling component

    VeTek Semiconductor has become a supplier of consumables for many MOCVD equipment with its superior processing capabilities. Aixtron G5+ ceiling component is one of our latest products, which is almost the same as the original Aixtron component and has received good feedback from customers. If you need such products, please contact VeTek Semiconductor!
  • CVD SiC Coating Protector

    CVD SiC Coating Protector

    Vetek Semiconductor's CVD SiC Coating Protector used is LPE SiC epitaxy, The term "LPE" usually refers to Low Pressure Epitaxy (LPE) in Low Pressure Chemical Vapor Deposition (LPCVD). In semiconductor manufacturing, LPE is an important process technology for growing single crystal thin films, often used to grow silicon epitaxial layers or other semiconductor epitaxial layers.Pls no hesitate to contact us for more questions.
  • CVD TaC coating planetary SiC epitaxial susceptor

    CVD TaC coating planetary SiC epitaxial susceptor

    CVD TaC coating planetary SiC epitaxial susceptor is one of the core components of MOCVD planetary reactor. Through CVD TaC coating planetary SiC epitaxial susceptor, the large disk orbits and the small disk rotates, and the horizontal flow model is extended to multi-chip machines, so that it has both the high-quality epitaxial wavelength uniformity management and defect optimization of single-chip machines and the production cost advantages of multi-chip machines.VeTek Semiconductor can provide customers with highly customized CVD TaC coating planetary SiC epitaxial susceptor. If you also want to make a planetary MOCVD furnace like Aixtron, come to us!
  • Graphite Heating Unit

    Graphite Heating Unit

    VeTek Semiconductor Graphite Heating Unit is a high-performance industrial heating solution made of high-purity graphite material, which can provide precise and efficient heating effect. Graphite Heating Unit is widely used in semiconductor, electronics, ceramics and other fields. Welcome your further inquiry.
  • MOCVD epitaxial wafer susceptor

    MOCVD epitaxial wafer susceptor

    VeTek Semiconductor has been engaged in the semiconductor epitaxial growth industry for a long time and has rich experience and process skills in MOCVD epitaxial wafer susceptor products. Today, VeTek Semiconductor has become China's leading MOCVD epitaxial wafer susceptor manufacturer and supplier, and the wafer susceptors it provides have played an important role in the manufacturing of GaN epitaxial wafers and other products.
  • CVD Silicon Carbide(SiC) Coated RTP Susceptor

    CVD Silicon Carbide(SiC) Coated RTP Susceptor

    The CVD SiC coated RTP susceptor from VeTek Semiconductor serves rapid thermal processing (RTP) and rapid thermal annealing (RTA) equipment used throughout semiconductor manufacturing. The substrate is machined from high‑purity isostatic graphite, over which a dense CVD silicon carbide (SiC) layer is deposited. This construction yields high thermal conductivity, robust chemical inertness, and sustained dimensional stability under repeated high‑temperature cycling.

Send Inquiry

X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies.Privacy Policy
RejectAccept