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Tantalum carbide (TaC) coatings are widely used in the semiconductor field, mainly for epitaxial growth reactor components, single crystal growth key components, high-temperature industrial components, MOCVD system heaters and wafer carriers.Its excellent high temperature resistance and corrosion resistance can improve equipment durability, yield and crystal quality, reduce energy consumption and improve stability.

SiC has high hardness, thermal conductivity, and corrosion resistance, making it ideal for semiconductor manufacturing. CVD SiC coating is created through chemical vapor deposition, providing high thermal conductivity, chemical stability, and a matching lattice constant for epitaxial growth. Its low thermal expansion and high hardness ensure durability and precision, making it essential in applications like wafer carriers, preheating rings, and more. VeTek Semiconductor specializes in custom SiC coatings for diverse industry needs.

SiC ceramic is a ceramic material produced by the reaction of silicon (Si) and carbon (C) elements, featuring extremely high hardness, heat resistance and chemical stability

With the development of the solar photovoltaic industry, diffusion furnaces and LPCVD furnaces are the main equipment for the production of solar cells, which directly affect the efficient performance of solar cells. Based on the comprehensive product performance and usage cost, silicon carbide ceramic materials have more advantages in the field of solar cells than quartz materials. The application of silicon carbide ceramic materials in the photovoltaic industry can greatly help photovoltaic enterprises reduce auxiliary material investment costs, improve product quality and competitiveness. The future trend of silicon carbide ceramic materials in the photovoltaic field is mainly towards higher purity, stronger load-bearing capacity, higher loading capacity, and lower cost.

In the semiconductor manufacturing industry, as device size continues to shrink, the deposition technology of thin film materials has posed unprecedented challenges. Atomic Layer Deposition (ALD), as a thin film deposition technology that can achieve precise control at the atomic level, has become an indispensable part of semiconductor manufacturing. This article aims to introduce the process flow and principles of ALD to help understand its important role in advanced chip manufacturing.

SiC and GaN are wide bandgap semiconductors with advantages over silicon, such as higher breakdown voltages, faster switching speeds, and superior efficiency. SiC is better for high-voltage, high-power applications due to its higher thermal conductivity, while GaN excels in high-frequency applications thanks to its superior electron mobility.