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  • High-Purity Opaque Quartz Shield & Shutter For MOCVD

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    The high-temperature and chemically reactive environments of MOCVD, the protection of the reaction chamber and the precision of process control are paramount. VETEK provides premium Opaque (Milky White) Quartz components, specifically designed to act as the "cleanroom" and "precision gate" within your semiconductor equipment. These components offer a cost-effective yet high-performance solution for managing thermal radiation and preventing contamination.
  • Three-Piece Graphite Crucibles

    Three-Piece Graphite Crucibles

    For demanding semiconductor crystal growth applications, the VETEK three‑piece graphite crucible delivers the stability, purity, and thermal evenness that the process requires. Made from high‑grade isostatic graphite—with optional SiC, TaC, or PyC coatings—its split design isn’t just for convenience. It actively reduces thermal stress, makes maintenance faster, and keeps performing cycle after cycle.
  • Graphite Rotating Susceptor

    Graphite Rotating Susceptor

    High purity graphite rotating susceptor plays an important role in the epitaxial growth of gallium nitride (MOCVD process). VeTek Semiconductor is a leading graphite rotating susceptor manufacturer and supplier in China. We have developed many high-purity graphite products based on high-purity graphite materials, which fully meet the requirements of the semiconductor industry. VeTek Semiconductor looks forward to becoming your partner in Rotating Graphite susceptor.
  • CVD SiC coated wafer susceptor

    CVD SiC coated wafer susceptor

    Veteksemicon’s CVD SiC coated wafer susceptor is a cutting-edge solution for semiconductor epitaxial processes, offering ultra-high purity (≤100ppb, ICP-E10 certified) and exceptional thermal/chemical stability for contamination-resistant growth of GaN, SiC, and silicon-based epi-layers. Engineered with precision CVD technology, it supports 6”/8”/12” wafers, ensures minimal thermal stress, and withstands extreme temperatures up to 1600°C.
  • TaC Coating Susceptor

    TaC Coating Susceptor

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    The Taiko process thins silicon wafers using its principles, technical advantages and process origins.

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    Silicon carbide substrates have many defects and cannot be processed directly. A specific single crystal thin film needs to be grown on them through an epitaxial process to make chip wafers. This thin film is the epitaxial layer. Almost all silicon carbide devices are realized on epitaxial materials. High-quality silicon carbide homogeneous epitaxial materials are the basis for the development of silicon carbide devices. The performance of epitaxial materials directly determines the realization of the performance of silicon carbide devices.

  • Porous Silicon Carbide (SiC) Ceramic Plates: High-Performance Materials in Semiconductor Manufacturing

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    Quartz devices play a critical role in solar cell manufacturing, offering exceptional thermal resistance, chemical purity, and structural stability required in high-temperature processes. From quartz diffusion tubes and crucibles to quartz boats and furnace components, these high-purity materials are essential for achieving optimal efficiency in diffusion, CVD, and wet etching steps.

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