CVD SiC Coated Barrel Susceptor

VeTek semiconductor CVD SiC Coated Barrel Susceptor is tailored for epitaxial processes in semiconductor manufacturing and is an ideal choice for improving product quality and yield. This SiC Coating Graphite Susceptor base adopts a solid graphite structure and is precisely coated with a SiC layer by CVD process, which makes it have excellent thermal conductivity, corrosion resistance and high temperature resistance, and can effectively cope with the harsh environment during epitaxial growth.

Product material and structure

CVD SiC barrel susceptor is a barge-shaped support component formed by coating silicon carbide (SiC) on the surface of a graphite matrix, which is mainly used to carry substrates (such as Si, SiC, GaN wafers) in CVD/MOCVD equipment and provide a uniform thermal field at high temperatures.

The barrel structure is often used for simultaneous processing of multiple wafers to improve epitaxial layer growth efficiency by optimizing airflow distribution and thermal field uniformity. The design should take into account the control of gas flow path and temperature gradient.

Core functions and technical parameters

Thermal stability: It is necessary to maintain structural stability in a high temperature environment of 1200 ° C to avoid deformation or thermal stress cracking.

Chemical inertia: The SiC coating needs to resist the erosion of corrosive gases (such as H₂, HCl) and metallic organic residues.

Thermal uniformity: The temperature distribution deviation should be controlled within ±1% to ensure the epitaxial layer thickness and doping uniformity.

Coating technical requirements

Density: completely cover the graphite matrix to prevent gas penetration leading to matrix corrosion.

Bond strength: need to pass high temperature cycle test to avoid coating peeling.

Materials and manufacturing processes

Coating material selection

3C-SiC (β-SiC) : Because its thermal expansion coefficient is close to graphite (4.5×10⁻⁶/℃), it has become the mainstream coating material, with high thermal conductivity and thermal shock resistance.

Alternative: TaC coating can reduce sediment contamination, but the process is complex and costly.

Coating preparation method

Chemical Vapor deposition (CVD) : A mainstream technique that deposits SiC on graphite surfaces by gas reaction. The coating is dense and binds strongly, but takes a long time and requires treatment of toxic gases (such as SiH₄).

Embedding method: The process is simple but the coating uniformity is poor, and subsequent treatment is required to improve the density.

Market status and localization progress

International monopoly

Dutch Xycard, Germany's SGL, Japan's Toyo Carbon and other companies occupy more than 90% of the global share, leading the high-end market.

Domestic technological breakthrough

Semixlab has been in line with international standards in coating technology and has developed new technologies to effectively prevent the coating from falling off.

On the graphite material, we have deep cooperation with SGL, Toyo and so on.

Typical application case

GaN epitaxial growth

Carry sapphire substrate in MOCVD equipment for GaN film deposition of LED and RF devices (such as HEMTs) to withstand NH₃ and TMGa atmospheres 12.

SiC power device

Supporting conductive SiC substrate, epitaxial growth SiC layer to manufacture high voltage devices such as MOSFETs and SBD, requires base life of more than 500 cycles 17.

SEM DATA OF CVD SIC COATING FILM CRYSTAL STRUCTURE:

Basic physical properties of CVD SiC coating:

VeTek semiconductor CVD SiC Coated Barrel Susceptor shops: