China SiC Processing Equipment Manufacturer, Supplier, Factory

Tantalum Carbide (TaC) is a high-performance ceramic material known for its extremely high hardness, high melting point and excellent chemical stability. It is widely used in semiconductor, aerospace and other industries requiring extreme heat, wear and corrosion resistance. This article will analyze in detail the structure, physical properties, and specific uses of the finished product in semiconductor manufacturing.

Silicon carbide ceramics, commonly known as SiC ceramics, are a versatile material with unique properties and a wide range of applications in various industries. The following is a detailed discussion of its material composition, physical properties, specific applications and advantages in semiconductor coating processes, and common problems encountered during processing.

MOCVD graphite trays play an important role in the epitaxial process. This article makes a detailed analysis on the selection of MOCVD graphite trays from the perspectives of material properties and application scenarios.

​In the silicon carbide (SiC) PVT crystal growth process, the stability and uniformity of the thermal field directly determine the crystal growth rate, defect density, and material uniformity. As the system boundary, thermal-field components exhibit surface thermophysical properties whose slight fluctuations are dramatically amplified under high-temperature conditions, ultimately leading to instability at the growth interface.

The core material of PECVD graphite boat is high-purity isotropic graphite material (purity is usually ≥99.999%), which has excellent electrical conductivity, thermal conductivity and density. Compared with ordinary graphite boats, PECVD graphite boats have many physical and chemical property advantages and are mainly used in the semiconductor and photovoltaic industries, especially in PECVD and CVD processes.

In the process of growing silicon carbide (SiC) crystals via the Physical Vapor Transport (PVT) method, the extreme high temperature of 2000–2500 °C is a “double-edged sword” — while it drives the sublimation and transport of source materials, it also dramatically intensifies impurity release from all materials within the thermal field system, especially trace metallic elements contained in conventional graphite hot-zone components. Once these impurities enter the growth interface, they will directly damage the core quality of the crystal. This is the fundamental reason why tantalum carbide (TaC) coatings have become a “mandatory option” rather than an “optional choice” for PVT crystal growth.