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China SiC Processing Equipment Manufacturer, Supplier, Factory

We're convinced that with joint initiatives, the business between us will bring us mutual benefits. We can easily guarantee you merchandise good quality and competitive rate for SiC Processing Equipment, SiC Process Tube, Silicon Carbide Process Tube, SiC Tube for Semiconductor, High Temperature SiC Tube, As an expert specialized within this field, we've been committed to solving any problem of high temperature protection for users.
SiC Processing Equipment, We pursue the management tenet of "Quality is superior, Service is supreme, Reputation is first", and will sincerely create and share success with all clients. We welcome you to contact us for more information and look forward to working with you.

Related Products

Hot Products

  • TaC Coated Graphite Wafer Carrier

    TaC Coated Graphite Wafer Carrier

    VeTek Semiconductor has carefully designed TaC Coated Graphite Wafer Carrier for customers. It is composed of high-purity graphite and TaC coating, which is suitable for various wafer epitaxial wafer processing. We have been specialized in SiC and TaC coating for many years. Compared with SiC coating, Our TaC coated graphite wafer carrier has a higher temperature resistance and wear-resistant. We look forward to becoming your long-term partner in China.
  • High purity graphite soft felt

    High purity graphite soft felt

    VeTek Semiconductor is a leading manufacturer and supplier of high purity graphite soft felt from China. The high purity graphite soft felt is widely used in semiconductor, photovoltaic and other fields. Whether vacuum high pressure gas quenching furnace, vacuum sintering furnace, single crystal silicon furnace, silicon carbide growth furnace and other furnace types, can provide excellent thermal insulation performance. According to user requirements, we can process various shapes of high purity graphite soft felt, the surface of the product can also be coating treatment. Looking forward to your inquiry.
  • Tantalum Carbide Coated Planetary Rotation Disk

    Tantalum Carbide Coated Planetary Rotation Disk

    VeTek Semiconductor is a leading manufacturer and supplier of Tantalum Carbide Coated Planetary Rotation Disk in China, focusing on TaC coating technology for many years. Our products have high purity and excellent high temperature resistance, which are widely recognized by semiconductor manufacturers. VeTek Semiconductor Tantalum Carbide Coated Planetary Rotation Disk has become the backbone of the wafer epitaxy industry. We look forward to establishing a long-term partnership with you to jointly promote technological progress and production optimization.
  • GaN on SiC epi susceptor

    GaN on SiC epi susceptor

    GaN on SiC epi susceptor plays a vital role in semiconductor processing through its excellent thermal conductivity, high temperature processing ability and chemical stability, and ensures the high efficiency and material quality of the GaN epitaxial growth process. VeTek Semiconductor is a China professional manufacturer of GaN on SiC epi susceptor ,We sincerely look forward to your further consultation.
  • CVD TaC coated three-petal guide ring

    CVD TaC coated three-petal guide ring

    VeTek Semiconductor has experienced many years of technological development and has mastered the leading process technology of CVD TaC coating. CVD TaC coated three-petal guide ring is one of VeTek Semiconductor's most mature CVD TaC coating products and is an important component for preparing SiC crystals by PVT method. With the help of VeTek Semiconductor, I believe your SiC crystal production will be smoother and more efficient.
  • Hyperpure graphite rigid felt

    Hyperpure graphite rigid felt

    As a leading manufacturer and supplier of Hyperpure graphite rigid felt products in China, VeTek Semiconductor Hyperpure graphite rigid felt is a high-performance graphite felt product designed for high-temperature applications. It has excellent thermal insulation and compressive strength and is an indispensable material in the field of semiconductor high-temperature processing. Welcome to your further inquiries.

  • Tantalum carbide technology breakthrough, SiC epitaxial pollution reduced by 75%?

    Recently, the German research institute Fraunhofer IISB has made a breakthrough in the research and development of tantalum carbide coating technology, and developed a spray coating solution that is more flexible and environmentally friendly than the CVD deposition solution, and has been commercialized.

  • How much do you know about CVD SiC ? - VeTek Semiconductor

    CVD SiC is a high-purity silicon carbide material manufactured by chemical vapor deposition. It is mainly used for various components and coatings in semiconductor processing equipment. The following content is an introduction to the product classification and core functions of CVD SiC

  • The Development History of 3C SiC

    Through continuous technological progress and in-depth mechanism research, 3C-SiC heteroepitaxial technology is expected to play a more important role in the semiconductor industry and promote the development of high-efficiency electronic devices.

  • What is Tantalum Carbide TaC Coating? - Veteksemicon

    This article introduces the product characteristics of TaC coating, the specific process of preparing TaC coating products using CVD technology, introduces Veteksemicon's most popular TaC coating, and briefly analyzes the reasons for choosing Veteksemicon.

  • How does SiC coating improve the oxidation resistance of carbon felt？

    The article describes the excellent physical properties of Carbon felt, the specific reasons for choosing SiC coating, and the method and principle of SiC coating on carbon felt. It also specifically analyzes the use of D8 ADVANCE X-ray diffractometer (XRD) to analyze the phase composition of SiC coating carbon felt.

  • Italy's LPE's 200mm SiC epitaxial technology progress

    This article introduces the latest developments in the newly designed PE1O8 hot-wall CVD reactor of the Italian company LPE and its ability to perform uniform 4H-SiC epitaxy on 200mm SiC.

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