Porous Graphite Guide Ring

Core Product Advantages

1. Ultra-High Purity & Low Defect Guarantee

Adopts a 3000℃ vacuum high-temperature purification process to deeply remove non-metallic impurities such as oxygen and nitrogen, increasing the product purity to ≥99.9995%. It eliminates impurity-induced crystal defects (e.g., microtubules, dislocations) from the source, ensuring the consistency and stability of the electrical properties of SiC single crystals, and laying a solid foundation for high-quality crystal growth.

2. Ultra-High Temperature Stability & Precise Thermal Field Regulation

Can withstand extreme high temperatures of 2200℃ in an argon or vacuum environment, operating continuously and stably for over 1000 hours without softening or deformation. The product has a low coefficient of thermal expansion, which can effectively avoid material cracking caused by thermal stress. It supports gradient distribution design of porosity (15-30%) and optimizes the pore size (10-200μm) combined with CFD (Computational Fluid Dynamics) simulation technology, controlling the temperature gradient fluctuation within ±3℃ and significantly improving thermal field uniformity and crystal growth consistency.

3. Customized Adaptation & Full-Scenario Satisfaction

• Geometric Shape Adaptation: Can accurately process complex shapes such as annular barrels and multi-layer shield structures according to customers' furnace structures to achieve perfect matching and installation.
• Surface Process Customization: Provides personalized surface treatment services such as ultra-precision polishing and special coatings, greatly enhancing the product's corrosion resistance and service life.

4. Performance-Verified & Efficiency Upgraded

• When used as a core thermal field component in the PVT SiC crystallization process, it has been verified in practical scenarios:
• The crystal growth rate is increased by 15%-20% compared with traditional graphite products, significantly shortening the production cycle.
• The yield of 4-inch SiC single crystal wafers exceeds 90%, effectively reducing production costs.
• The equipment maintenance cycle is extended from the conventional 3 months to 6 months, reducing the frequency of shutdown maintenance and improving production efficiency.
  
  

Application Scenarios

• PVT Growth Furnace Assembly: Serves as the core component for SiC material sublimation and crystal growth, providing stable and uniform thermal field distribution to ensure the smooth progress of the crystallization process.
• Thermal Field Shielding Component: The unique porous structure can effectively buffer thermal stress, reduce equipment wear, and extend the overall service life of the equipment.
• Seed Crystal Support Accessory: Possesses high mechanical strength to stably support seed crystals, ensuring the precision of directional crystal growth.
• Gas Diffusion Layer: Optimizes gas-phase transfer efficiency, promotes uniform sublimation and deposition of raw materials, and further improves single crystal quality and growth rate.

Technical Parameters

Core Competitive Highlights

• Extreme High-Temperature Performance: Maintains structural stability at 2200℃ without softening or deformation, supporting continuous operation for over 1000 hours to meet extreme process requirements.
• Customized Thermal Field Solution: Relies on CFD simulation technology to optimize pore gradient design, accurately matching customers' process needs and improving crystal uniformity and product yield.
• Rapid Response Service: Provides process parameter matching test services and delivers prototype solutions within 72 hours, helping customers accelerate R&D and production processes.