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China Silicon Carbide Process Tube Manufacturer, Supplier, Factory

In the past few years, our company absorbed and digested advanced technologies both at home and abroad. Meanwhile, our company staffs a team of experts devoted to the development of Silicon Carbide Process Tube, SiC Process Tube, SiC Tube for Semiconductor, High Temperature SiC Tube, SiC Processing Equipment, We, with great passion and faithfulness, are prepared to present you with best companies and striding forward along with you to create a dazzling upcoming.
Silicon Carbide Process Tube, We've exported our solutions all over the world, especially the USA and European countries. Furthermore, all of our merchandise are manufactured with advanced equipment and strict QC procedures to ensure high quality.If you are interested in any of our products and solutions, please don't hesitate to contact us. We are going to try our best to meet your needs.

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    TaC Coated Guide Ring

    TaC Coated Guide Ring is made of high-quality graphite and TaC coating. In the preparation of SiC crystals by PVT method, VeTek Semiconductor's TaC coated guide ring is mainly used to guide and control the airflow, optimize the single crystal growth process, and improve the single crystal yield. With excellent TaC coating technology, our products have excellent high temperature resistance, corrosion resistance and good mechanical properties.
  • Epi wafer holder

    Epi wafer holder

    VeTek Semiconductor is a professional Epi Wafer Holder manufacturer and factory in China. Epi Wafer Holder is a wafer holder for the epitaxy process in semiconductor processing. It is a key tool to stabilize the wafer and ensure uniform growth of the epitaxial layer. It is widely used in epitaxy equipment such as MOCVD and LPCVD. It is an irreplaceable device in the epitaxy process. Welcome your further consultation.
  • Solid SiC Etching Focusing Ring

    Solid SiC Etching Focusing Ring

    Solid SiC Etching Focusing Ring is one of the core components of wafer etching process, which plays a role in fixing wafer, focusing plasma and improving wafer etching uniformity. As the leading SiC Focusing Ring manufacturer in China, VeTek Semiconductor has advanced technology and mature process, and manufactures Solid SiC Etching Focusing Ring that fully meets the needs of end customers according to customer requirements. We look forward to your inquiry and becoming each other's long-term partners.
  • TaC Coating Heater

    TaC Coating Heater

    VeTek Semiconductor TaC Coating Heater has an extremely high melting point (about 3880°C). The high melting point enables it to operate at extremely high temperatures, especially in the growth of gallium nitride (GaN) epitaxial layers in the metal organic chemical vapor deposition (MOCVD) process. VeTek Semiconductor is committed to providing customers with customized product solutions. We look forward to hearing from you.
  • AMAT Cover Top Quartz 8 inch PCII

    AMAT Cover Top Quartz 8 inch PCII

    The AMAT Cover Top Quartz 8" PCII (0200-00218) is a high-purity quartz component designed for Applied Materials Endura PVD chambers, delivering excellent contamination control, plasma stability, and extended service life. Engineered for 200mm semiconductor processes, it serves as a critical protective and insulating element in the chamber top region, helping improve yield and process consistency. Vetek Semiconductor offers precision-manufactured, OEM-compatible quartz parts with reliable performance and global supply capability. We welcome your inquiry.
  • CVD Tantalum Carbide(TaC) Coated Susceptor

    CVD Tantalum Carbide(TaC) Coated Susceptor

    The VETEK CVD TaC Coated Susceptor combines a high-purity isostatic graphite substrate with a dense CVD tantalum carbide (TaC) coating to deliver exceptional thermal stability, corrosion resistance, and low particle generation for demanding semiconductor epitaxy. Designed for SiC, GaN, and AlN epitaxial growth, it minimizes contamination, improves wafer temperature uniformity, and extends component service life in high-temperature MOCVD and CVD processes.
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