Web Menu

Product Search

Language

Products

China SiC Carrier Plate Manufacturer, Supplier, Factory

We've got a highly efficient group to deal with inquiries from shoppers. Our purpose is ""100% client fulfillment by our product high-quality, price tag & our staff service"" and enjoy a superb reputation amongst clientele. With quite a few factories, we will provide a wide variety of SiC Carrier Plate, Silicon Carbide Carrier Plate, LED Etching Process, LED Wafer Etching, We've a big inventory to fulfill our customer's needs and needs.
SiC Carrier Plate, We can meet the various needs of customers at home and abroad. We welcome new and old customers to come to consult & negotiate with us. Your satisfaction is our motivation! Let us work together to write a brilliant new chapter!

Related Products

Hot Products

  • SiC Coating Susceptor

    SiC Coating Susceptor

    Vetek Semiconductor focuses on the research and development and industrialization of CVD SiC coating and CVD TaC coating. Taking SiC coating susceptor as an example, the product is highly processed with high precision, dense CVD SIC coating, high temperature resistance and strong corrosion resistance. Your inquiry into us is welcome.
  • SiC Coating Cover Segments

    SiC Coating Cover Segments

    Vtech Semiconductor is committed to the development and commercialization of CVD SiC coated parts for Aixtron reactors. As an example, our SiC Coating Cover Segments have been carefully processed to produce a dense CVD SiC coating with excellent corrosion resistance, chemical stability, welcome to discuss application scenarios with us.
  • CVD TaC Coated Graphite Ring

    CVD TaC Coated Graphite Ring

    The CVD TaC Coated Graphite Ring by Veteksemicon is engineered to meet the extreme demands of semiconductor wafer processing. Utilizing Chemical Vapor Deposition (CVD) technology, a dense and uniform Tantalum Carbide (TaC) coating is applied to high-purity graphite substrates, achieving exceptional hardness, wear resistance, and chemical inertness. In semiconductor fabrication, the CVD TaC Coated Graphite Ring is widely used in MOCVD, etching, diffusion, and epitaxial growth chambers, serving as a key structural or sealing component for wafer carriers, susceptors, and shielding assemblies. Looking forward to your further consultation.
  • Tantalum Carbide Ring

    Tantalum Carbide Ring

    As an advanced manufacturer and producer of Tantalum Carbide Ring products in China, VeTek Semiconductor Tantalum Carbide Ring has extremely high hardness, wear resistance, high temperature resistance and chemical stability, and is widely used in the semiconductor manufacturing field. Especially in CVD, PVD, ion implantation process, etching process, and wafer processing and transportation, it is an indispensable product for semiconductor processing and manufacturing. Looking forward to your further consultation.
  • TaC Coating Guide Ring

    TaC Coating Guide Ring

    VeTek Semiconductor's TaC Coating Guide Ring is created by applying tantalum carbide coating onto graphite parts using a highly advanced technique called chemical vapor deposition (CVD). This method is well-established and offers exceptional coating properties. By utilizing the TaC Coating Guide Ring, the lifespan of graphite components can be significantly extended, the movement of graphite impurities can be suppressed, and the SiC and AIN single crystal quality can be reliably maintained. Welcome to inquiry us.
  • SiC Coated Graphite Barrel Susceptor for EPI

    SiC Coated Graphite Barrel Susceptor for EPI

    The barrel type epitaxial wafer heating base is a product with complicated processing technology, which is very challenging to machining equipment and ability. Vetek semiconductor has advanced equipment and rich experience in processing SiC coated graphite barrel susceptor for EPI, can provide the same as the original factory life, more cost-effective epitaxial barrels.If you are interested in our datas,pls no hesitate to contact us.

  • How Do Tantalum Carbide Coatings Stabilize the PVT Thermal Field?

    ​In the silicon carbide (SiC) PVT crystal growth process, the stability and uniformity of the thermal field directly determine the crystal growth rate, defect density, and material uniformity. As the system boundary, thermal-field components exhibit surface thermophysical properties whose slight fluctuations are dramatically amplified under high-temperature conditions, ultimately leading to instability at the growth interface.

  • What is Silicon Carbide Ceramic?

    Silicon carbide ceramics, commonly known as SiC ceramics, are a versatile material with unique properties and a wide range of applications in various industries. The following is a detailed discussion of its material composition, physical properties, specific applications and advantages in semiconductor coating processes, and common problems encountered during processing.

  • Different technical routes of SiC epitaxial growth furnace

    Silicon carbide substrates have many defects and cannot be processed directly. A specific single crystal thin film needs to be grown on them through an epitaxial process to make chip wafers. This thin film is the epitaxial layer. Almost all silicon carbide devices are realized on epitaxial materials. High-quality silicon carbide homogeneous epitaxial materials are the basis for the development of silicon carbide devices. The performance of epitaxial materials directly determines the realization of the performance of silicon carbide devices.

  • what is glassy carbon？ - Veteksemicon

    Glassy carbon is a non-graphitized carbon that combines the properties of glass and ceramics. It has many properties such as high temperature resistance, corrosion resistance, good electrical conductivity, etc. This blog analyzes the research history and future development trend of glassy carbon, which is worth reading.

  • From the manufacturing process of electrostatic suction cups to mass production manufacturers

    The Dechuck principle of the Electrostatic Chuck is a key part of its workflow that involves electrostatic force elimination and wafer release mechanisms.

  • The Development History of 3C SiC

    Through continuous technological progress and in-depth mechanism research, 3C-SiC heteroepitaxial technology is expected to play a more important role in the semiconductor industry and promote the development of high-efficiency electronic devices.

Send Inquiry

X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept