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China Ultra High Purity Manufacturer, Supplier, Factory

We also offer product sourcing and flight consolidation services. We have our own factory and sourcing office. We can provide you with almost every type of product related to our product range for Ultra High Purity, TaC Coated Crucible, TaC Coated Rings, TaC Coated Porous Graphite, TaC Coated Graphite Susceptor, Welcome all customers of property and abroad to go to our organization, to forge a fantastic long run by our cooperation.
Ultra High Purity, We insist on "Quality First, Reputation First and Customer First". We are committed to providing high-quality items and good after-sales services. Up to now, our solutions have been exported to more than 60 countries and areas around the world, such as America, Australia and Europe. We enjoy a high reputation at home and abroad. Always persisting in the principle of "Credit, Customer and Quality", we expect cooperation with people in all walks of life for mutual benefits.

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    CVD SiC Coating Nozzles are crucial components used in the LPE SiC epitaxy process for depositing silicon carbide materials during semiconductor manufacturing. These nozzles are typically made of high-temperature and chemically stable silicon carbide material to ensure stability in harsh processing environments. Designed for uniform deposition, they play a key role in controlling the quality and uniformity of epitaxial layers grown in semiconductor applications. Welcome your further inquiry.
  • TaC Coating Heater

    TaC Coating Heater

    VeTek Semiconductor TaC Coating Heater has an extremely high melting point (about 3880°C). The high melting point enables it to operate at extremely high temperatures, especially in the growth of gallium nitride (GaN) epitaxial layers in the metal organic chemical vapor deposition (MOCVD) process. VeTek Semiconductor is committed to providing customers with customized product solutions. We look forward to hearing from you.
  • SiC Coated Wafer Carrier for Etching

    SiC Coated Wafer Carrier for Etching

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  • Silicon Pedestal

    Silicon Pedestal

    VeTek Semiconductor Silicon Pedestal is a key component in semiconductor diffusion and oxidation processes. As a dedicated platform for carrying silicon boats in high-temperature furnaces, the Silicon Pedestal has many unique advantages, including improved temperature uniformity, optimized wafer quality, and enhanced performance of semiconductor devices. For more product information, please feel free to contact us.
  • CVD SiC Pancake Susceptor

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  • High purity graphite soft felt

    High purity graphite soft felt

    VeTek Semiconductor is a leading manufacturer and supplier of high purity graphite soft felt from China. The high purity graphite soft felt is widely used in semiconductor, photovoltaic and other fields. Whether vacuum high pressure gas quenching furnace, vacuum sintering furnace, single crystal silicon furnace, silicon carbide growth furnace and other furnace types, can provide excellent thermal insulation performance. According to user requirements, we can process various shapes of high purity graphite soft felt, the surface of the product can also be coating treatment. Looking forward to your inquiry.

  • Uses of solid silicon carbide

    Solid silicon carbide (SiC) has become one of the key materials in semiconductor manufacturing due to its unique physical properties. The following is an analysis of its advantages and practical value based on its physical properties and its specific applications in semiconductor equipment (such as wafer carriers, shower heads, etching focus rings, etc.).

  • Silicon carbide nanomaterials

    Silicon carbide nanomaterials (SiC) are materials with at least one dimension at the nanometer scale (1-100nm). These materials can be zero-, one-, two-, or three-dimensional and have diverse applications.

  • Different technical routes of SiC epitaxial growth furnace

    Silicon carbide substrates have many defects and cannot be processed directly. A specific single crystal thin film needs to be grown on them through an epitaxial process to make chip wafers. This thin film is the epitaxial layer. Almost all silicon carbide devices are realized on epitaxial materials. High-quality silicon carbide homogeneous epitaxial materials are the basis for the development of silicon carbide devices. The performance of epitaxial materials directly determines the realization of the performance of silicon carbide devices.

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    High purity: The silicon epitaxial layer grown by chemical vapor deposition (CVD) has extremely high purity, better surface flatness and lower defect density than traditional wafers.

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    With the development of the solar photovoltaic industry, diffusion furnaces and LPCVD furnaces are the main equipment for the production of solar cells, which directly affect the efficient performance of solar cells. Based on the comprehensive product performance and usage cost, silicon carbide ceramic materials have more advantages in the field of solar cells than quartz materials. The application of silicon carbide ceramic materials in the photovoltaic industry can greatly help photovoltaic enterprises reduce auxiliary material investment costs, improve product quality and competitiveness. The future trend of silicon carbide ceramic materials in the photovoltaic field is mainly towards higher purity, stronger load-bearing capacity, higher loading capacity, and lower cost.

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