Aluminum Nitride ceramic Disc

Vetek semiconductor Aluminum nitride ceramic plate is an ideal insulating ceramic product with high thermal conductivity, low expansion coefficient, high strength, high temperature resistance, chemical corrosion resistance, high resistivity and low dielectric loss. Aluminum nitride ceramics can replace toxic beryllium oxide ceramics and are widely used in electronics industry.

Performance advantage:

Compared with alumina ceramics, aluminum nitride has high thermal conductivity, at 100 degrees Celsius, the thermal conductivity is above 170W/ M.k, and the thermal conductivity of aluminum oxide is about 15-35 W/(m·K), and aluminum nitride is more than 5 times that of aluminum oxide.

The hardness of aluminum nitride ceramic material is generally 9 Mohs hardness, which means that the hardness of aluminum nitride ceramics is very high, second only to diamond, in the semiconductor packaging process, usually aluminum nitride ceramic cups are used for the substrate, thermal conductivity plate and other key instability, in order to improve good thermal conductivity and mechanical strength.

The linear expansion coefficient of this kind of ceramic is usually in the range of 4 to 5×10^^-6/℃, which makes it more matched with the expansion coefficient of metal materials, helping to reduce the generation of stress and thermal stress caused by temperature changes.

At the same time, the bending strength of aluminum nitride ceramics is usually between 300 and 700 MPa, which is higher than that of many other ceramic materials such as zirconia and alumina.

In terms of temperature, aluminum nitride ceramics can work stably in a high temperature environment, and its use temperature can reach more than 1500℃, which is suitable for high temperature processes and applications.

In addition to its resistance to inert gases, aluminum nitride ceramic disc exhibits excellent chemical stability and high resistance to corrosive media such as acids and alkalis, making them widely used in the chemical industry.

Aluminum nitride ceramic disc have a high resistivity, usually between 10^¹⁴ and 10^¹⁵ Ω·cm, which is suitable for occasions where electrical insulation properties are required. Aluminum nitride ceramics have a very low dielectric loss, which means that energy loss can be reduced in dielectric applications.

Application Area:

Semiconductor packaging: For power modules (such as IGBTs), high-power chip carriers, solid-state relays, etc., to provide efficient thermal management 3410.

Electronic substrate: As a thin film/thick film circuit board, support high precision machining (e.g. polishing to Ra 0.3μm surface roughness) 410.

Rf/microwave devices: Low dielectric loss (tanδ ≤3×10⁻⁴, 1MHz) characteristics suitable for high-frequency circuit board 1018.

Other industrial scenarios: such as vacuum coating equipment parts, hig

Processing and customization services

Precision machining: Support cutting, drilling, grinding, polishing (surface roughness Ra up to 0.3μm) and customized special-shaped structure 410.

Surface treatment: The sintered substrate can be re-processed to improve the surface smoothness (e.g., from 30 microinch Ra to 1 microinch Ra) 4.

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