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China Oxidation and Diffusion Furnace Manufacturer, Supplier, Factory

Our solutions are broadly acknowledged and dependable by users and may meet consistently developing economic and social requires for Oxidation and Diffusion Furnace, Aluminum Nitride ceramic Disc, Ceramic disk, AlN disc, Silicon Carbide Ceramics, Thanks for taking your useful time to go to us and look ahead to have a nice cooperation with you.
Oxidation and Diffusion Furnace, Adhering to the principle of "Enterprising and Truth-Seeking, Preciseness and Unity", with technology as the core, our company continues to innovate, dedicated to providing you with the highest cost-effective solutions and meticulous after-sales service. We firmly believe that: we're outstanding as we have been specialized.

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  • Wafer Carrier Tray

    Wafer Carrier Tray

    Vetek Semiconductor specializes in partnering with its customers to produce custom designs for Wafer Carrier Tray. Wafer Carrier tray can be designed for use in CVD silicon epitaxy, III-V epitaxy, and III-Nitride epitaxy, Silicon carbide epitaxy. Please contact Vetek semiconductor regarding your susceptor requirements.
  • TaC Coating Rotation Susceptor

    TaC Coating Rotation Susceptor

    As a professional manufacturer, innovator and leader of TaC Coating Rotation Susceptor products in China. VeTek Semiconductor TaC Coating Rotation Susceptor is usually installed in chemical vapor deposition (CVD) and molecular beam epitaxy (MBE) equipment to support and rotate wafers to ensure uniform material deposition and efficient reaction. It is a key component in semiconductor processing. Welcome your further consultation.
  • Silicon Carbide SiC wafer boat

    Silicon Carbide SiC wafer boat

    Veteksemicon SiC wafer boats are widely used in critical high-temperature processes in semiconductor manufacturing, serving as reliable carriers for oxidation, diffusion, and annealing processes for silicon-based integrated circuits. They also excel in the third-generation semiconductor sector, perfectly suited for demanding processes such as epitaxial growth (EPI) and metal-organic chemical vapor deposition (MOCVD) for SiC and GaN power devices. They also support the high-temperature fabrication of high-efficiency solar cells in the photovoltaic industry. Looking forward to your further consultation.
  • SiC coated graphite susceptor for ASM

    SiC coated graphite susceptor for ASM

    Veteksemicon SiC coated graphite susceptor for ASM is a core carrier component in semiconductor epitaxial processes. This product utilizes our proprietary pyrolytic silicon carbide coating technology and precision machining processes to ensure superior performance and an ultra-long lifespan in high-temperature and corrosive process environments. We deeply understand the stringent requirements of epitaxial processes on substrate purity, thermal stability, and consistency, and are committed to providing customers with stable, reliable solutions that enhance overall equipment performance.
  • CMP Polishing Slurry

    CMP Polishing Slurry

    CMP polishing slurry (Chemical Mechanical Polishing Slurry) is a high-performance material used in semiconductor manufacturing and precision material processing. Its core function is to achieve fine flatness and polishing of the material surface under the synergistic effect of chemical corrosion and mechanical grinding to meet the flatness and surface quality requirements at the nano level. Looking forward to your further consultation.
  • TaC Coated Graphite Wafer Cover Ring

    TaC Coated Graphite Wafer Cover Ring

    VeTek Semiconductor is a professional TaC Coated Graphite Wafer Cover Ring manufacturer and supplier in China. we not only provide advanced and durable TaC Coated Graphite Wafer Cover Ring, but also support customized services. Welcome to buy TaC Coated Graphite Wafer Cover Ring from our factory.
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  • What Is a Halfmoon in an LPE Reaction Chamber?

    Learn what a Halfmoon component is in an LPE reaction chamber and how it supports thermal stability, gas flow management, and reactor structure in SiC epitaxy systems. Explore graphite materials, CVD SiC coating, TaC coating, and modern semiconductor reactor technologies.

  • Why Is Porous Tantalum Carbide (TaC) Coated Graphite Ring Critical for Reliable SiC Crystal Growth

    The Porous Tantalum Carbide (TaC) Coated Graphite Ring is a specialized thermal-field component designed for Physical Vapor Transport (PVT) SiC single-crystal growth. By combining high-purity porous graphite with a dense CVD tantalum carbide coating, it provides high-temperature stability, corrosion protection, controlled heat distribution, and low contamination. This article explains its structure, technical advantages, applications, specifications, and selection considerations for semiconductor and SiC crystal-growth equipment.

  • What is Dishing and Erosion in the CMP Process?

    Chemical mechanical polishing (CMP) removes excess material and surface defects through the combined action of chemical reactions and mechanical abrasion. It is a key process for achieving global planarization of the wafer surface and is indispensable for multilayer copper interconnects and low-k dielectric structures. In practical manufacturing

  • Intelligent Cutting Technology for Cubic Silicon Carbide Wafers

    Smart cut is an advanced semiconductor manufacturing process based on ion implantation and wafer stripping, specifically designed for the production of ultra-thin and highly uniform 3C-SiC (cubic silicon carbide) wafers. It can transfer ultra-thin crystal materials from one substrate to another, thereby breaking the original physical limitations and changing the entire substrate industry.

  • What is the difference between epitaxy and ALD?

    The main difference between epitaxy and atomic layer deposition (ALD) lies in their film growth mechanisms and operating conditions. Epitaxy refers to the process of growing a crystalline thin film on a crystalline substrate with a specific orientation relationship, maintaining the same or similar crystal structure. In contrast, ALD is a deposition technique that involves exposing a substrate to different chemical precursors in sequence to form a thin film one atomic layer at a time.

  • Semiconductor process: Chemical Vapor Deposition (CVD)

    Chemical vapor deposition (CVD) in semiconductor manufacturing is used to deposit thin film materials in the chamber, including SiO2, SiN, etc., and commonly used types include PECVD and LPCVD. By adjusting the temperature, pressure and reaction gas type, CVD achieves high purity, uniformity and good film coverage to meet different process requirements.

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