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China SiC-CVD equipment Manufacturer, Supplier, Factory

We now have a highly efficient crew to deal with inquiries from clients. Our intention is "100% shopper pleasure by our merchandise quality, price tag & our staff service" and take pleasure in a very good standing amongst purchasers. With quite a few factories, we can easily provide a wide vary of SiC-CVD equipment, SiC Coating Inlet Ring, CVD SiC equipment, Silicon carbide epitaxy, CVD SiC coating, Great top quality, competitive prices, prompt delivery and dependable services are guaranteed Kindly let's know your quantity requirement under each size category so that we can inform you accordingly.
SiC-CVD equipment, Our Company policy is "quality first, to be better and stronger, sustainable development" . Our pursuit goals is "for society, customers, employees, partners and enterprises to seek reasonable benefit". We aspirate to do cooperate with all different the auto parts manufacturers, repair shop, auto peer , then create a beautiful future! Thank you for taking time to browse our website and we would welcome any suggestions you may have that can help us to improve our site.

Related Products

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  • CVD SiC coated wafer susceptor

    CVD SiC coated wafer susceptor

    Veteksemicon’s CVD SiC coated wafer susceptor is a cutting-edge solution for semiconductor epitaxial processes, offering ultra-high purity (≤100ppb, ICP-E10 certified) and exceptional thermal/chemical stability for contamination-resistant growth of GaN, SiC, and silicon-based epi-layers. Engineered with precision CVD technology, it supports 6”/8”/12” wafers, ensures minimal thermal stress, and withstands extreme temperatures up to 1600°C.
  • Aixtron Satellite wafer carrier

    Aixtron Satellite wafer carrier

    VeTek Semiconductor’s Aixtron Satellite Wafer Carrier is a wafer carrier used in AIXTRON equipment, mainly used in MOCVD processes, and is particularly suitable for high-temperature and high-precision semiconductor processing processes. The carrier can provide stable wafer support and uniform film deposition during MOCVD epitaxial growth, which is essential for the layer deposition process. Welcome your further consultation.
  • SiC Coating Collector Center

    SiC Coating Collector Center

    VeTek Semiconductor is a manufacturer reputable for CVD SiC coating in China, brings you the cutting-edge SiC Coating Collector Center in Aixtron G5 MOCVD system. These SiC Coating Collector Center are meticulously designed with high purity graphite and boast an advanced CVD SiC coating, ensuring high temperature stability, corrosion resistance, high purity.Looking forward to cooperating with you!
  • Porous SiC Vacuum Chuck

    Porous SiC Vacuum Chuck

    Vetek Semiconductor's Porous SiC Vacuum Chuck is usually used in key components of semiconductor manufacturing equipment, especially when it comes to CVD and PECVD processes. Vetek Semiconductor specializes in manufacturing and supplying high-performance Porous SiC Vacuum Chuck. Welcome for your further inquiries.
  • Silicon Carbide SiC wafer boat

    Silicon Carbide SiC wafer boat

    Veteksemicon SiC wafer boats are widely used in critical high-temperature processes in semiconductor manufacturing, serving as reliable carriers for oxidation, diffusion, and annealing processes for silicon-based integrated circuits. They also excel in the third-generation semiconductor sector, perfectly suited for demanding processes such as epitaxial growth (EPI) and metal-organic chemical vapor deposition (MOCVD) for SiC and GaN power devices. They also support the high-temperature fabrication of high-efficiency solar cells in the photovoltaic industry. Looking forward to your further consultation.
  • PG (Pyrolytic Graphite) Coated Ring

    PG (Pyrolytic Graphite) Coated Ring

    The VETEK PG (Pyrolytic Graphite) Coated Ring is purpose-built for semiconductor thermal field and crystal growth environments where uniform heat distribution and stable temperatures are non-negotiable. Starting with a high-purity graphite base and finished with a dense Pyrolytic Graphite coating, this component delivers exceptional thermal conductivity, stands up to severe thermal shock, and retains its dimensions over long runs at extreme temperatures. You will find these rings used extensively in crystal growth furnaces, high-temperature ovens, and thermal field assemblies for semiconductors—anywhere that precise temperature control directly drives process repeatability and final product quality.

  • Material of silicon carbide epitaxy

    Silicon carbide is reshaping the semiconductor industry for power and high-temperature applications, with its comprehensive properties, from epitaxial substrates to protective coatings to electric vehicles and renewable energy systems.

  • Three SiC single crystal growth technologies

    The main methods for growing SiC single crystals are: physical vapor transport (PVT), high temperature chemical vapor deposition (HTCVD) and high temperature solution growth (HTSG).

  • VETEK Celebrates Topping-Out Ceremony of New Semiconductor Manufacturing Base

    VETEK celebrates the topping-out ceremony of its new semiconductor manufacturing base, expanding production capacity for advanced SiC, TaC and PyC coating technologies, Solid SiC components, high-purity graphite parts and semiconductor thermal field materials.

  • Different technical routes of SiC epitaxial growth furnace

    Silicon carbide substrates have many defects and cannot be processed directly. A specific single crystal thin film needs to be grown on them through an epitaxial process to make chip wafers. This thin film is the epitaxial layer. Almost all silicon carbide devices are realized on epitaxial materials. High-quality silicon carbide homogeneous epitaxial materials are the basis for the development of silicon carbide devices. The performance of epitaxial materials directly determines the realization of the performance of silicon carbide devices.

  • Optimizing MicroLED Performance with SiC Substrates and Advanced Coatings

    Struggling with MicroLED yield rates? Discover why industry leaders are shifting to SiC substrates and TaC-coated MOCVD components to solve thermal stress and particle contamination. Learn the technical edge of CVD SiC for next-gen GaN displays

  • What challenges does the CVD TaC coating process for SiC single crystal growth face in semiconductor processing?

    The article analyzes the specific challenges faced by the CVD TaC coating process for SiC single crystal growth during semiconductor processing, such as material source and purity control, process parameter optimization, coating adhesion, equipment maintenance and process stability, environmental protection and cost control, as well as the corresponding industry solutions.

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