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China semiconductor ceramics Manufacturer, Supplier, Factory

We insist on offering high-quality output with superior small business concept, honest profits along with the best and fast service. it will bring you not only the top quality product and huge profit, but one of the most significant will be to occupy the endless market for semiconductor ceramics, Semiconductor Ceramic Nozzle, Ceramic Nozzle, ceramic nozzles for sandblasting, ceramic nozzle spray, We often hold the philosophy of win-win, and establish long-term cooperation connection with consumers from around the planet.We think that our expansion base on customer's achievement, credit rating is our daily life.
semiconductor ceramics, Why we can do these? Because: A, We are honest and reliable. Our products have high quality, attractive price, sufficient supply capacity and perfect service. B, Our geographical position has a big advantage . C, Various types: Welcome your inquiry, It will be highly appreciated.

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  • CVD TaC Coating Crucible

    CVD TaC Coating Crucible

    VeTek Semiconductor is a professional manufacturer and leader of CVD TaC Coating Crucible products in China. CVD TaC Coating Crucible is based on tantalum carbon (TaC) coating. The tantalum carbon coating is evenly covered on the surface of the crucible through chemical vapor deposition (CVD) process to enhance its heat resistance and corrosion resistance. It is a material tool specially used in high temperature extreme environments. Welcome your further consultation.
  • SiC Wafer Boat

    SiC Wafer Boat

    The SiC wafer boat is used to carry the wafer,mainly for the oxidation and diffusion process, to ensure that the temperature can be evenly distributed on the wafer surface. The high temperature stability and high thermal conductivity of SiC materials ensure efficient and reliable semiconductor processing. Vetek semiconductor is committed to providing quality products at competitive prices.
  • Porous TaC Coated Graphite Ring

    Porous TaC Coated Graphite Ring

    The porous TaC coated graphite ring produced by VETEK uses a lightweight porous graphite substrate and is coated with a high-purity tantalum carbide coating, featuring excellent resistance to high temperatures, corrosive gases and plasma erosion
  • Monocrystalline pulling Crucible

    Monocrystalline pulling Crucible

    Graphite crucible is an important part of Monocrystalline Pulling Crucibles in the process of achieving monocrystalline silicon ingot growth.Vetek semiconductor's crucibles are intricately engineered to meet the rigorous requirements set by the semiconductor industry.We are committed to producing and supplying crystal growth graphite crucibles that excel in performance, quality, and cost-effectiveness to meet the evolving needs of the industry.Welcome to inquiry us.
  • Alumina Ceramic Vacuum Chuck

    Alumina Ceramic Vacuum Chuck

    VeTek Semiconductor is a professional Alumina Ceramic Vacuum Chuck manufacturer and factory in China. Alumina Ceramic Vacuum Chuck uses high-purity aluminum oxide ceramics with excellent heat resistance, chemical resistance and mechanical strength. It is mainly used to fix and support wafers and substrates. It is a high-performance equipment for semiconductor processing. Welcome your further inquiries.
  • Quartz Gas Distribution Plate

    Quartz Gas Distribution Plate

    The Quartz Shower Head, also known as a Quartz Gas Distribution Plate, is a critical component used in semiconductor thin-film deposition processes such as CVD(Chemical Vapor Deposition), PECVD (Plasma-Enhanced CVD),and ALD (Atomic Layer Deposition). Made from high-purity fused quartz, this component ensures ultra-low contamination and excellent thermal stability, enabling precise gas delivery and uniform film growth across the wafer surface. Looking forward to your further consultation.

  • Application of carbon-based thermal field materials in silicon carbide crystal growth

    Silicon carbide (SiC)'s Key growth methods include PVT, TSSG, and HTCVD, each with distinct advantages and challenges. Carbon-based thermal field materials like insulation systems, crucibles, TaC coatings, and porous graphite enhance crystal growth by providing stability, thermal conductivity, and purity, essential for SiC's precise fabrication and application.

  • Welcome Customers to Visit Veteksemicon's Carbon Fiber Products Factory

    On September 5, 2025, a customer from Poland visited a factory under VETEK to learn about our advanced technologies and innovative processes in the production of carbon fiber products.

  • How to solve the problem of sintering cracks in silicon carbide ceramics? - VeTek semiconductor

    This article mainly describes the broad application prospects of silicon carbide ceramics. It also focuses on the analysis of the causes of sintering cracks in silicon carbide ceramics and the corresponding solutions.

  • Silicon(Si) epitaxy preparation technology

    Single crystal materials alone cannot meet the needs of the growing production of various semiconductor devices. At the end of 1959, a thin layer of single crystal material growth technology - epitaxial growth was developed.

  • What is the difference between epitaxy and ALD?

    The main difference between epitaxy and atomic layer deposition (ALD) lies in their film growth mechanisms and operating conditions. Epitaxy refers to the process of growing a crystalline thin film on a crystalline substrate with a specific orientation relationship, maintaining the same or similar crystal structure. In contrast, ALD is a deposition technique that involves exposing a substrate to different chemical precursors in sequence to form a thin film one atomic layer at a time.

  • Application of TaC-Coated Graphite Parts in Single Crystal Furnaces

    In the growth of SiC and AlN single crystals using the physical vapor transport (PVT) method, crucial components such as the crucible, seed holder, and guide ring play a vital role. As depicted in Figure 2 [1], during the PVT process, the seed crystal is positioned in the lower temperature region, while the SiC raw material is exposed to higher temperatures (above 2400 ℃).

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