VeTek Aluminum Nitride Ceramic Electrostatic Chucks (ESCs) are high-thermal-conductivity wafer clamping platforms engineered for semiconductor process tools that demand precise temperature control, stable electrostatic holding, and low particle generation. Manufactured from high-purity AlN ceramics, these chucks deliver excellent heat spreading, high electrical insulation, and reliable Coulomb or Johnsen–Rahbek clamping for 150 mm, 200 mm, and 300 mm wafer processes.
•High-purity AlN ceramic with thermal conductivity up to ~180 W/m·K for efficient heat transfer and temperature uniformity
•Strong electrical insulation and high volume resistivity supporting stable clamping at 1–3 kV (higher voltages available)
•Custom dielectric layer materials and electrode layouts: Coulomb or Johnsen–Rahbek (JR); single or multi-zone
•Fast clamp and de-clamp performance, typically under 0.1 second
•Surface dimple microstructures down to ~300 μm diameter, reducing contact area to as low as ~1%
•High flatness capability; typical global flatness on the order of 0.5–3 μm PV for 300 mm class platforms
•Dense microstructure with near-zero water absorption and good chemical resistance for process environments
2.Typical Applications
Aluminum Nitride Ceramic Electrostatic Chucks are used in process steps that require both secure wafer holding and controlled thermal behavior:
•Dry plasma etch (ICP / RIE) and related chamber processes
•CVD, PEALD, thermal ALD, and other thin-film deposition stages
•Annealing and thermal process modules requiring uniform wafer temperature
•Inspection, metrology, and precision stages where low particle and stable clamping are critical
3.AlN Material Grades – Typical Properties
VeTek offers multiple Aluminum Nitride grades to balance thermal conductivity, mechanical strength, and cost for ESC designs:
Property
AIN-HC95
AIN-HP95
AIN99
AIN999
AIN-HP999
AIN-HP999LR
Color
Gray
Gray
Gray
Gray
Gray
Gray
Purity
≥95%
≥95%
≥99%
≥99.9%
≥99.9%
≥99.9%
Density (g/cm³)
3.3
3.3
3.3
3.2
3.3
3.3
Water Absorption (%)
0
0
0
0
0
0
HV Hardness (GPa)
10
10
10
10
10
10
Flexural Strength (MPa)
380
400
350
310
360
310
Elastic Modulus (GPa)
320
300
300
300
300
300
Fracture Toughness
3
3.4
3
2.8
2.3
3.3
CTE (×10⁻⁶/°C)
4.6
5.7
5.2
5.5
5.7
5.4
Thermal Conductivity
180
180
100
90
90
90
Thermal Shock (°C)
400
500
—
—
350
—
Dielectric Strength
16
16
—
16
—
—
Volume Resistivity
1×10¹⁴
1×10¹⁵
1×10¹⁵
—
1×10¹⁵
Adjustable
Dielectric Constant
8.6
8.6
8.5
8.5
—
—
Units: Thermal conductivity in W/(m·K); dielectric strength in kV/mm; volume resistivity in Ω·cm (25 °C); dielectric constant at 1 MHz. Values are typical and may vary with process and part geometry.
4.Typical ESC Design Parameters
Parameter
Typical Value / Range
Ceramic material
Aluminum nitride (AlN)
ESC type
Coulomb / Johnsen–Rahbek (JR)
Electrode layout
Single or multi-zone
Manufacturing route
Hot pressing (AlN preferred for high-TC grades)
Clamp / de-clamp time
< 0.1 s (typical)
Dimple diameter (min.)
~300 μm
Contact area (with dimples)
Can be reduced to ~1%
Global flatness (300 mm class)
~0.5–3 μm PV (typical)
Clamping voltage
1–3 kV standard; designs >15 kV possible
5.Why Choose VeTek AlN Electrostatic Chucks?
VeTek Semiconductor integrates advanced AlN ceramics with precision ESC manufacturing for semiconductor customers who need both thermal performance and reliable clamping:
•Multiple AlN grades with thermal conductivity from ~90 to ~180 W/m·K to match process thermal budgets
•Flexible electrode and dielectric design for Coulomb or JR clamping behavior
•Tight control of flatness, surface microstructure, and electrical insulation performance
•Full lifecycle support: design, new build, and multi-level refurbishment
For etch, deposition, and thermal tools that depend on uniform wafer temperature and clean, repeatable clamping, VeTek Aluminum Nitride Ceramic Electrostatic Chucks provide a high-performance ceramic platform backed by application-focused engineering support.
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