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China Epitaxial deposition Manufacturer, Supplier, Factory

Often customer-oriented, and it's our ultimate target to become not only probably the most reputable, trustable and honest provider, but also the partner for our customers for Epitaxial deposition, TaC coated graphite guide ring, Wafer processing, Plasma etching, CVD TaC coating, If possible, make sure you send your necessities with a detailed list including the style/item and quantity you require. We'll then mail our greatest selling prices to you.
Epitaxial deposition, Our products and solutions are exported worldwide. Our customers are always satisfied with our reliable quality, customer-oriented services and competitive prices. Our mission is "to continue to earn your loyalty by dedicating our efforts to the constant improvement of our solutions and services in order to ensure the satisfaction of our end-users, customers, employees, suppliers and the worldwide communities in which we cooperate".

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  • SiC ICP Etching Plate

    SiC ICP Etching Plate

    Veteksemicon provides high-performance SiC ICP Etching Plates, designed for ICP etching applications in the semiconductor industry. Its unique material properties enable it to perform well in high temperature, high pressure and chemical corrosion environments, ensuring excellent performance and long-term stability in various etching processes.
  • High purity graphite ring

    High purity graphite ring

    High purity graphite ring is suitable for GaN epitaxial growth processes. Their excellent stability and superior performance have made them widely used. VeTek Semiconductor produces and manufactures world-leading High purity graphite ring to help the GaN epitaxy industry continue to progress. VeTekSemi looks forward to becoming your partner in China.
  • Large sized resistance heating SiC crystal growth furnace

    Large sized resistance heating SiC crystal growth furnace

    Silicon carbide crystal growth is a core process in the manufacturing of high-performance semiconductor devices. The stability, precision, and compatibility of crystal growth equipment directly determine the quality and yield of silicon carbide ingots. Based on the characteristics of Physical Vapor Transport (PVT) technology, Veteksemi has developed a resistance heating furnace for silicon carbide crystal growth, enabling stable growth of 6-inch, 8-inch, and 12-inch silicon carbide crystals with full compatibility with conductive, semi-insulating, and N-type material systems. Through precise control of temperature, pressure, and power, it effectively reduces crystal defects such as EPD (Etch Pit Density) and BPD (Basal Plane Dislocation), while featuring low energy consumption and a compact design to meet the high standards of industrial large-scale production.
  • SiC coated graphite susceptor for ASM

    SiC coated graphite susceptor for ASM

    Veteksemicon SiC coated graphite susceptor for ASM is a core carrier component in semiconductor epitaxial processes. This product utilizes our proprietary pyrolytic silicon carbide coating technology and precision machining processes to ensure superior performance and an ultra-long lifespan in high-temperature and corrosive process environments. We deeply understand the stringent requirements of epitaxial processes on substrate purity, thermal stability, and consistency, and are committed to providing customers with stable, reliable solutions that enhance overall equipment performance.
  • Photovoltaic Quartz Boats

    Photovoltaic Quartz Boats

    At VETEK, we understand that a quartz boat is more than just a consumable—it is a high-precision component critical to the final yield of photovoltaic processes. VETEK’s Photovoltaic Quartz Boats are engineered specifically for TOPCon, PERC, and high-performance monocrystalline/polycrystalline cell production lines, delivering exceptional reliability across diffusion, oxidation, and annealing stages.
  • SiC Coated Wafer Carrier for Etching

    SiC Coated Wafer Carrier for Etching

    As a leading Chinese manufacturer and supplier of Silicon Carbide Coating products, Veteksemicon's SiC Coated Wafer Carrier for Etching plays an irreplaceable core role in the etching process with its excellent high temperature stability, outstanding corrosion resistance and high thermal conductivity.

  • The challenges of silicon carbide crystal growth furnaces

    Silicon carbide (SiC) crystal growth furnaces play a vital role in producing high-performance Sic wafers for next-generation semiconductor devices. However, the process of growing high-quality SiC crystals presents significant challenges. From managing extreme thermal gradients to reducing crystal defects, ensuring uniform growth, and controlling production costs, each step requires advanced engineering solutions. This article will analyze the technical challenges of SIC crystal growth furnaces from multiple perspectives.

  • Semiconductor process: Chemical Vapor Deposition (CVD)

    Chemical vapor deposition (CVD) in semiconductor manufacturing is used to deposit thin film materials in the chamber, including SiO2, SiN, etc., and commonly used types include PECVD and LPCVD. By adjusting the temperature, pressure and reaction gas type, CVD achieves high purity, uniformity and good film coverage to meet different process requirements.

  • MOCVD SiC Coated Graphite Susceptor Cracking Analysis & Thermal Stress Optimization Case Study

    Learn how Vetek eliminated radial cracking in large-size MOCVD SiC-coated graphite susceptors. Structural stress buffer redesign & CTE matching increased service life by 300%+.

  • What is Silicon Wafer CMP Polishing Slurry?

    Silicon wafer CMP (Chemical Mechanical Planarization) polishing slurry is a critical component in the semiconductor manufacturing process. It plays a pivotal role in ensuring that silicon wafers—used to create integrated circuits (ICs) and microchips—are polished to the exact level of smoothness required for the next stages of production

  • The Solution to the Carbon Encapsulation Defect in Silicon Carbide Substrates

    With the global energy transition, the AI revolution, and the wave of new-generation information technologies, silicon carbide (SiC) has rapidly advanced from being a "potential material" to a "strategic foundational material" due to its exceptional physical properties.

  • The Development History of 3C SiC

    Through continuous technological progress and in-depth mechanism research, 3C-SiC heteroepitaxial technology is expected to play a more important role in the semiconductor industry and promote the development of high-efficiency electronic devices.

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CVD epitaxial deposition barrel reactor

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