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China CVD Silicon Carbide Manufacturer, Supplier, Factory

Our enterprise since its inception, constantly regards product good quality as organization life, constantly improve production technology, strengthen merchandise high quality and continuously strengthen enterprise total good quality administration, in strict accordance with all the national standard ISO 9001:2000 for CVD Silicon Carbide, physical vapor transport (PVT), Bulk SiC, CVD SiC Coating, SiC crystal growth, "Quality first, Price lowest, Service best" is the spirit of our company. We sincerely welcome you to visit our company and negotiate mutual business!
CVD Silicon Carbide, We pay high attention to customer service, and cherish every customer. We now have maintained a strong reputation in the industry for many years. We've been honest and work on building a long-term relationship with our customers.

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    Silicon carbide substrates have many defects and cannot be processed directly. A specific single crystal thin film needs to be grown on them through an epitaxial process to make chip wafers. This thin film is the epitaxial layer. Almost all silicon carbide devices are realized on epitaxial materials. High-quality silicon carbide homogeneous epitaxial materials are the basis for the development of silicon carbide devices. The performance of epitaxial materials directly determines the realization of the performance of silicon carbide devices.

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