Web Menu

Product Search

Language

Products

China physical vapor transport (PVT) Manufacturer, Supplier, Factory

Our pursuit and company goal is to "Always satisfy our customer requirements". We continue to develop and design superior quality products for both our old and new customers and achieve a win-win prospect for our clients as well as us for physical vapor transport (PVT), CVD Silicon Carbide, Bulk SiC, CVD SiC Coating, SiC crystal growth, For more information and facts, you should never wait to make contact with us. All inquiries from you may be highly appreciated.
physical vapor transport (PVT), Customer satisfaction is our goal. We're looking forward to cooperating with you and providing our best services in your case. We warmly welcome you to contact us and remember to feel free to contact us. Browse our online showroom to see what we can do for yourself. And then E-mail us your specifications or inquiries today.

Related Products

Hot Products

  • High Purity Graphite Paper

    High Purity Graphite Paper

    The high purity graphite paper provided by VeTek Semiconductor is a reliable and efficient sealing solution. High-purity graphite paper is a sealing material made of advanced graphite materials with excellent performance and reliability. It has excellent high-temperature resistance and can withstand sealing requirements under extreme temperature conditions. Welcome to inquire at any time. We look forward to becoming your long-term partner in China.
  • High purity graphite ring

    High purity graphite ring

    High purity graphite ring is suitable for GaN epitaxial growth processes. Their excellent stability and superior performance have made them widely used. VeTek Semiconductor produces and manufactures world-leading High purity graphite ring to help the GaN epitaxy industry continue to progress. VeTekSemi looks forward to becoming your partner in China.
  • CVD SiC coated wafer susceptor

    CVD SiC coated wafer susceptor

    Veteksemicon’s CVD SiC coated wafer susceptor is a cutting-edge solution for semiconductor epitaxial processes, offering ultra-high purity (≤100ppb, ICP-E10 certified) and exceptional thermal/chemical stability for contamination-resistant growth of GaN, SiC, and silicon-based epi-layers. Engineered with precision CVD technology, it supports 6”/8”/12” wafers, ensures minimal thermal stress, and withstands extreme temperatures up to 1600°C.
  • TaC Coated Graphite Wafer Carrier

    TaC Coated Graphite Wafer Carrier

    VeTek Semiconductor has carefully designed TaC Coated Graphite Wafer Carrier for customers. It is composed of high-purity graphite and TaC coating, which is suitable for various wafer epitaxial wafer processing. We have been specialized in SiC and TaC coating for many years. Compared with SiC coating, Our TaC coated graphite wafer carrier has a higher temperature resistance and wear-resistant. We look forward to becoming your long-term partner in China.
  • SiC ICP Etching Plate

    SiC ICP Etching Plate

    Veteksemicon provides high-performance SiC ICP Etching Plates, designed for ICP etching applications in the semiconductor industry. Its unique material properties enable it to perform well in high temperature, high pressure and chemical corrosion environments, ensuring excellent performance and long-term stability in various etching processes.
  • CVD TaC coating planetary SiC epitaxial susceptor

    CVD TaC coating planetary SiC epitaxial susceptor

    CVD TaC coating planetary SiC epitaxial susceptor is one of the core components of MOCVD planetary reactor. Through CVD TaC coating planetary SiC epitaxial susceptor, the large disk orbits and the small disk rotates, and the horizontal flow model is extended to multi-chip machines, so that it has both the high-quality epitaxial wavelength uniformity management and defect optimization of single-chip machines and the production cost advantages of multi-chip machines.VeTek Semiconductor can provide customers with highly customized CVD TaC coating planetary SiC epitaxial susceptor. If you also want to make a planetary MOCVD furnace like Aixtron, come to us!

  • How does TaC coating improve the service life of graphite components? - VeTek Semiconductor

    Tantalum carbide (TaC) coating can significantly extend the life of graphite parts by improving high temperature resistance, corrosion resistance, mechanical properties and thermal management capabilities. Its high purity characteristics reduce impurity contamination, improve crystal growth quality, and enhance energy efficiency. It is suitable for semiconductor manufacturing and crystal growth applications in high-temperature, highly corrosive environments.

  • Application of carbon-based thermal field materials in silicon carbide crystal growth

    Silicon carbide (SiC)'s Key growth methods include PVT, TSSG, and HTCVD, each with distinct advantages and challenges. Carbon-based thermal field materials like insulation systems, crucibles, TaC coatings, and porous graphite enhance crystal growth by providing stability, thermal conductivity, and purity, essential for SiC's precise fabrication and application.

  • What is the difference between epitaxy and ALD?

    The main difference between epitaxy and atomic layer deposition (ALD) lies in their film growth mechanisms and operating conditions. Epitaxy refers to the process of growing a crystalline thin film on a crystalline substrate with a specific orientation relationship, maintaining the same or similar crystal structure. In contrast, ALD is a deposition technique that involves exposing a substrate to different chemical precursors in sequence to form a thin film one atomic layer at a time.

  • Chip Manufacturing: Atomic Layer Deposition (ALD)

    In the semiconductor manufacturing industry, as device size continues to shrink, the deposition technology of thin film materials has posed unprecedented challenges. Atomic Layer Deposition (ALD), as a thin film deposition technology that can achieve precise control at the atomic level, has become an indispensable part of semiconductor manufacturing. This article aims to introduce the process flow and principles of ALD to help understand its important role in advanced chip manufacturing.

  • Why does SiC coated Graphite Susceptor fail? - VeTek Semiconductor

    During the SiC epitaxial growth process, SiC coated graphite suspension failure may occur. This paper conducts a rigorous analysis of the failure phenomenon of SiC coated graphite suspension, which mainly includes two factors: SiC epitaxial gas failure and SiC coating failure.

  • Intelligent Cutting Technology for Cubic Silicon Carbide Wafers

    Smart cut is an advanced semiconductor manufacturing process based on ion implantation and wafer stripping, specifically designed for the production of ultra-thin and highly uniform 3C-SiC (cubic silicon carbide) wafers. It can transfer ultra-thin crystal materials from one substrate to another, thereby breaking the original physical limitations and changing the entire substrate industry.

Send Inquiry

X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept