Web Menu

Product Search

Language

Products

China Vertical Column Wafer Boat Pedestal Manufacturer, Supplier, Factory

Adhering into the theory of "quality, services, efficiency and growth", now we have gained trusts and praises from domestic and international shopper for Vertical Column Wafer Boat Pedestal, Silicon Carbide Wafer Boat, Vertical Column Wafer Boat & Pedestal, Wafer Boat Pedestal, Wafer Boat, Our really specialized process eliminates the component failure and offers our shoppers unvarying top quality, allowing us to control cost, plan capacity and maintain consistent on time delivery.
Vertical Column Wafer Boat Pedestal, We take measure at any price to attain essentially the most up-to-date gear and procedures. The packing of nominated brand is our a further distinguishing feature. The solutions to assure years of trouble-free service has attracted a great deal customers. The items are obtainable in improved designs and richer variety, they're produced scientifically of purely raw sup+C7plies. It accessible in a variety of designs and specs for the selection. The newest forms are much far better than the previous one and they're extremely popular with several clients.

Related Products

Hot Products

  • Wafer Carrier Tray

    Wafer Carrier Tray

    Vetek Semiconductor specializes in partnering with its customers to produce custom designs for Wafer Carrier Tray. Wafer Carrier tray can be designed for use in CVD silicon epitaxy, III-V epitaxy, and III-Nitride epitaxy, Silicon carbide epitaxy. Please contact Vetek semiconductor regarding your susceptor requirements.
  • SiC ICP Etching Plate

    SiC ICP Etching Plate

    Veteksemicon provides high-performance SiC ICP Etching Plates, designed for ICP etching applications in the semiconductor industry. Its unique material properties enable it to perform well in high temperature, high pressure and chemical corrosion environments, ensuring excellent performance and long-term stability in various etching processes.
  • LPE SiC EPI Halfmoon

    LPE SiC EPI Halfmoon

    LPE SiC Epi Halfmoon is a special design for horizonational epitaxy furnace, a revolutionary product designed to elevate LPE reactor SiC epitaxy processes. This cutting-edge solution boasts several key features that ensure superior performance and efficiency throughout your manufacturing operations.Vetek Semiconductor is professional at manufacturing LPE SiC Epi halfmoon in 6 inch,8inch.Looking forward to setting up long term cooperation with you.
  • Advanced Porous Graphite

    Advanced Porous Graphite

    As a professional and powerful manufacturer and supplier, Vetek Semiconductor has always been committed to providing High-purity Advanced Porous Graphite to the market. Relying on our own professional and excellent team, we are able to provide our customers with tailor-made products with competitive prices and efficient solutions.Vetek Semiconductor sincerely look forward to becoming your partner in China.
  • CVD TaC coating planetary SiC epitaxial susceptor

    CVD TaC coating planetary SiC epitaxial susceptor

    CVD TaC coating planetary SiC epitaxial susceptor is one of the core components of MOCVD planetary reactor. Through CVD TaC coating planetary SiC epitaxial susceptor, the large disk orbits and the small disk rotates, and the horizontal flow model is extended to multi-chip machines, so that it has both the high-quality epitaxial wavelength uniformity management and defect optimization of single-chip machines and the production cost advantages of multi-chip machines.VeTek Semiconductor can provide customers with highly customized CVD TaC coating planetary SiC epitaxial susceptor. If you also want to make a planetary MOCVD furnace like Aixtron, come to us!
  • High-purity Quartz Bath

    High-purity Quartz Bath

    In the critical steps of wafer cleaning, etching, and wet etching, high-purity quartz bath is more than just a container; it's the first line of defense for process success. Metal ion contamination, thermal shock cracking, chemical attack, and particle residue are hidden causes of yield fluctuations. Veteksemi is deeply rooted in semiconductor-grade quartz. Every quartz bath we manufacture is designed to provide uncompromising reliability and cleanliness for your cutting-edge processes.

  • What is the Core Material for SiC Growth ?

    In the preparation of high-quality and high-yield silicon carbide substrates, the core requires precise control of production temperature by good thermal field materials. Currently, the thermal field crucible kits mainly used are high-purity graphite structural components, whose functions are to heat molten carbon powder and silicon powder as well as to maintain heat.

  • Still worried about material performance in high-temperature environments?

    Having worked in the semiconductor industry for over a decade, I understand firsthand how challenging material selection can be in high-temperature, high-power environments. It wasn't until I encountered VETEK's SiC Block that I finally found a truly reliable solution.

  • How does SiC coating improve the oxidation resistance of carbon felt？

    The article describes the excellent physical properties of Carbon felt, the specific reasons for choosing SiC coating, and the method and principle of SiC coating on carbon felt. It also specifically analyzes the use of D8 ADVANCE X-ray diffractometer (XRD) to analyze the phase composition of SiC coating carbon felt.

  • Porous Silicon Carbide (SiC) Ceramic Plates: High-Performance Materials in Semiconductor Manufacturing

    Porous SiC Ceramic Plate is one of the core materials in the field of semiconductor manufacturing. With its unique structure and excellent physical properties, Porous SiC Ceramic Disc has become an irreplaceable key component in high temperature and corrosive environments. In this article, we will deeply analyze its physical properties, application scenarios and selection advantages.

  • Based on 8-inch silicon carbide single crystal growth furnace technology

    Silicon carbide is one of the ideal materials for making high-temperature, high-frequency, high-power and high-voltage devices. In order to improve production efficiency and reduce costs, the preparation of large-size silicon carbide substrates is an important development direction.

  • Application of TaC-Coated Graphite Parts in Single Crystal Furnaces

    In the growth of SiC and AlN single crystals using the physical vapor transport (PVT) method, crucial components such as the crucible, seed holder, and guide ring play a vital role. As depicted in Figure 2 [1], during the PVT process, the seed crystal is positioned in the lower temperature region, while the SiC raw material is exposed to higher temperatures (above 2400 ℃).

Send Inquiry

X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept